3D Chip-on-wager-on-substrate structure with via last process
Disclosed herein is a package comprising a first redistribution layer (RDL) disposed on a first side of a first semiconductor substrate and a second RDL disposed on a second semiconductor substrate, wherein the first RDL is bonded to the second RDL. First conductive elements are disposed in the first RDL and the second RDL. First vias extend from one or more of the first conductive elements through the first semiconductor substrate to a second side of the first semiconductor substrate opposite the first side. First spacers are interposed between the first semiconductor substrate and the first vias and each extend from a respective one of the first conductive elements through the first semiconductor substrate.
1. A device comprising:
a first die comprising a first substrate and a first redistribution layer (RDL);
external connectors adjacent a first side of the first die;
a second die bonded to a second side of the first die, the second die comprising a second substrate and a second RDL, the first RDL and the second RDL being disposed between the first substrate and the second substrate;
a first via extending through the first substrate and the first RDL, the first via connecting the external connectors to the second RDL; and
first spacers surrounding the first via, the first spacers physically separating the first via from the first substrate.
2. The device of claim 1 further comprising:
a second via extending through the first substrate, the second via connecting the external connectors to the first RDL; and
a second spacer surrounding the second via, the second spacer physically separating the second via from the first substrate.
3. The device of claim 2 further comprising:
an encapsulant at least partially surrounding the second substrate, outermost peripheries of the encapsulant and the first substrate being coterminous.
4. The device of claim 1 further comprising:
an encapsulant at least partially surrounding the first substrate; and
a second via extending through the encapsulant, the second via connecting the external connectors to the second RDL.
5. The device of claim 4 further comprising:
a second spacer surrounding the second via, the encapsulant contacting a portion of the second via.
6. The device of claim 4 further comprising:
a second spacer surrounding the second via, the second spacer physically separating the second via from the encapsulant.
7. The device of claim 1 , wherein the first RDL comprises a first dielectric layer, wherein the second RDL comprises a second dielectric layer, and wherein a surface of the first dielectric layer is directly bonded to a surface of the second dielectric layer.
8. The device of claim 7 , wherein the first RDL further comprises first conductive features, wherein the second RDL further comprises second conductive features, and wherein surfaces of the first conductive features are directly bonded to surfaces of the second conductive features.
9. A device comprising:
a first substrate having a first side and a second side opposite the first side;
a first redistribution layer (RDL) adjacent the first side of the first substrate;
an integrated circuit die attached to the first RDL;
a first via having a first portion extending through the first substrate and a second portion extending through the first RDL, the first RDL being connected to the integrated circuit die by the first via;
a first spacer disposed around the first portion of the first via;
a second spacer disposed around the second portion of the first via; and
a first external connector adjacent the second side of the first substrate, the first external connector being connected to the integrated circuit die by the first via.
10. The device of claim 9 , wherein the first spacer contacts the first substrate and the first RDL.
11. The device of claim 9 , wherein the second spacer contacts the first RDL and the integrated circuit die.
12. The device of claim 9 , wherein the first portion of the first via has a first width, and the second portion of the first via has a second width, the first width being greater than the second width.
13. The device of claim 9 , wherein the integrated circuit die is directly bonded to the first RDL by hybrid bonds.
14. A device comprising:
a first redistribution layer (RDL) disposed over a first substrate;
a second RDL disposed over a second substrate, the second RDL being bonded to the first RDL, the first RDL and the second RDL being disposed between the first substrate and the second substrate;
an encapsulant over the second RDL and extending along sidewalls of the first substrate and the first RDL;
a first via extending through the encapsulant, the first RDL, and the first substrate, the first via being connected to a first conductive feature in the second RDL; and
a first spacer contacting a sidewall of the first via, the first spacer being disposed between the first via and the first substrate.
15. The device of claim 14 further comprising:
a second via extending through the encapsulant, the second via being connected to a second conductive feature in the second RDL.
16. The device of claim 15 further comprising:
a second spacer contacting a portion of a sidewall of the second via, the second spacer being disposed between the second via and the encapsulant.
17. The device of claim 15 further comprising:
a second spacer contacting an entirety of a sidewall of the second via, the second spacer being disposed between the second via and the encapsulant.
18. The device of claim 14 , wherein the first via has a first portion extending through the first substrate and a second portion extending through the first RDL, the first portion having a first width, the second portion having a second width, the first width being greater than the second width.
19. The device of claim 14 , wherein the first via has a first portion extending through the first substrate and a second portion extending through the first RDL, the first portion and the second portion having a same width.
20. The device of claim 14 , wherein the first RDL is directly bonded to the second RDL by hybrid bonds.