Crystalline multilayer oxide thin films structure in semiconductor device
Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.
1. A corundum-structured crystalline oxide film comprising:
metal elements that comprise gallium (Ga),
wherein the corundum-structured crystalline oxide film has a thickness of 1 μm or more,
the corundum-structured crystalline oxide film has a surface roughness (Ra) of 0.1 μm or less, and
the corundum-structured crystalline oxide film has an atomic ratio of gallium (Ga) to all of the metal elements comprised in the corundum-structured crystalline oxide film to be 0.5 or more.
2. The corundum-structured crystalline oxide film of claim 1 , wherein the corundum-structured crystalline oxide film has an electrical resistivity of 80 mΩcm or less.
3. The corundum-structured crystalline oxide film of claim 1 , wherein the corundum-structured crystalline oxide film comprises a dopant.
4. The corundum-structured crystalline oxide film of claim 1 , wherein the dopant has a concentration that is 1E15/cm 3 to 1E20/cm 3 .
5. The corundum-structured crystalline oxide film of claim 3 , wherein the dopant comprises at least one selected from Ge, Sn, Si, Ti, Zr, and Hf.
6. The corundum-structured crystalline oxide film of claim 3 , wherein the corundum-structured crystalline oxide film is electrically conductive.
7. A semiconductor device comprising:
the corundum-structured crystalline oxide film of claim 3 ; and
an electrode that is electrically connected to the corundum-structured crystalline oxide film.
8. A corundum-structured crystalline oxide film comprising:
metal elements that comprise at least one metal element selected from among gallium, indium, aluminum, and iron,
wherein the corundum-structured crystalline oxide film has a thickness of 1 μm or more,
the corundum-structured crystalline oxide film has a surface roughness (Ra) of 0.1 μm or less,
the corundum-structured crystalline oxide film has an atomic ratio of a sum of at least one metal element selected from among gallium, indium, aluminum, and iron, and
the atomic ratio of the sum of the at least one metal element selected from among gallium, indium, aluminum, and iron to all of the metal elements comprised in the corundum-structured crystalline oxide film is 0.5 or more.
9. The corundum-structured crystalline oxide film of claim 8 , wherein the corundum-structured crystalline oxide film has an electrical resistivity of 80 mΩcm or less.
10. The corundum-structured crystalline oxide film of claim 8 , wherein the corundum-structured crystalline oxide film comprises a dopant.
11. The corundum-structured crystalline oxide film of claim 8 , wherein the corundum-structured crystalline oxide film has an atomic ratio of gallium (Ga) to all of the metal elements comprised in the corundum-structured crystalline oxide film to be 0.5 or more.
12. The corundum-structured crystalline oxide film of claim 10 , wherein the dopant comprises at least one selected from Ge, Sn, Si, Ti, Zr, and Hf.
13. The corundum-structured crystalline oxide film of claim 10 , wherein the crystalline oxide film comprises a composition that is represented by In X Al Y Ga Z Fe V O 3 (0≤X≤2.5, 0≤Y≤2.5, 0≤Z≤2.5, 0≤V≤2.5, X+Y+Z+V=1.5 to 2.5).
14. The corundum-structured crystalline oxide film of claim 13 , wherein the composition comprised in the crystalline oxide film is 1≤Z.
15. A semiconductor device comprising:
the corundum-structured crystalline oxide film of claim 10 ; and
an electrode that is electrically connected to the corundum-structured crystalline oxide film.
16. A corundum-structured crystalline oxide film comprising:
metal elements that comprise at least one metal selected from among gallium, indium, aluminum, and iron,
wherein the corundum-structured crystalline oxide film has a thickness of 1 μm or more,
the corundum-structured crystalline oxide film has an electrical resistivity of 80 mΩcm or less,
the corundum-structured crystalline oxide film has an atomic ratio of a sum of the at least one metal element selected from among gallium, indium, aluminum, and iron, and
the atomic ratio of the sum of the at least one metal element to all of the metal elements comprised in the corundum-structured crystalline oxide film is 0.5 or more.
17. The corundum-structured crystalline oxide film of claim 16 , wherein the corundum-structured crystalline oxide film has a surface roughness (Ra) of 0.1 μm or less.
18. The corundum-structured crystalline oxide film of claim 16 further comprising: a dopant that comprises at least one selected from Ge, Sn, Si, Ti, Zr, and Hf.
19. The corundum-structured crystalline oxide film of claim 16 , wherein the corundum-structured crystalline oxide film has an atomic ratio of gallium (Ga) to all of the metal elements comprised in the corundum-structured crystalline oxide film to be 0.5 or more.
20. The corundum-structured crystalline oxide film of claim 16 , wherein the corundum-structured crystalline oxide film is monocrystalline.
21. A semiconductor device comprising:
the corundum-structured crystalline oxide film of claim 18 ; and
an electrode that is electrically connected to the corundum-structured crystalline oxide film.
22. The corundum-structured crystalline oxide film of claim 16 , wherein the crystalline oxide film comprises a composition that is represented by In X Al Y Ga Z Fe V O 3 (0≤X≤2.5, 0≤Y≤2.5, 0≤Z≤2.5, 0≤V≤2.5, X+Y+Z+V=1.5 to 2.5).
23. The corundum-structured crystalline oxide film of claim 22 , wherein the composition comprised in the crystalline oxide film is 1≤Z.