System, method and apparatus for forming a thin film lithium ion battery

1. A system configured to make a thin film battery, the system comprising:

a chamber comprising:

a first deposition station that includes a first deposition source configured to deposit silicon on a substrate;

a second deposition station that includes a second deposition source configured to deposit a first non-silicon material and a second non-silicon material on the substrate, wherein the first non-silicon material and the second non-silicon material are different from each other; and

a transport system configured to transport the substrate to the first deposition station and the second deposition station; and

a controller including one or more computer readable storage media having instructions stored thereon that are configured to cause the system to perform operations, the operations comprising forming, within the chamber, a thin film anode layer on a solid electrolyte layer of a thin film battery, wherein the forming of the thin film anode layer, as caused by the instructions, includes:

transporting, by the transport system, the substrate to the first deposition station;

depositing, by the first deposition source, silicon on the electrolyte layer to form a first layer on the electrolyte layer that consists of silicon;

transporting, by the transport system after forming the first layer, the substrate from the first deposition station to the second deposition station;

depositing, by the second deposition source, the first non-silicon material on the first layer to form a second layer on the first layer;

transporting, by the transport system after forming the second layer, the substrate from the second deposition station to the first deposition station;

depositing, by the first deposition source, silicon on the second layer to form a third layer on the second layer that consists of silicon;

transporting, by the transport system after forming the third layer, the substrate from the first deposition station to the second deposition station; and

depositing, by the second deposition source, the second non-silicon material on the third layer to form a fourth layer on the third layer.

2. The system of claim 1 , further comprising:

a current collector station configured to form one or more current collectors on the substrate;

a cathode station configured to form a cathode layer on the substrate;

an electrolyte station configured to form the electrolyte layer; and

an anode station that includes the chamber and that is configured to form the thin film anode layer.

3. The system of claim 2 , wherein the operations further comprise:

transporting the substrate to the current collector station;

forming, by the current collector station, a first current collector on the substrate;

transporting the substrate from the current collector station to the cathode station;

forming, by the cathode station, the cathode layer on the first current collector;

transporting the substrate from the cathode station to the electrolyte station;

forming, by the electrolyte station, the electrolyte layer on the cathode layer;

transporting the substrate from the electrolyte station to the anode station;

forming, by the anode station, the thin film anode layer;

transporting the substrate from the anode station to the current collector station; and

forming, by the current collector station, a second current collector on the thin film anode layer.

4. The system of claim 1 , wherein the chamber further includes a gas curtain between the first deposition station and the second deposition station.

5. The system of claim 1 , wherein the chamber further includes a partial wall between the first deposition station and the second deposition station.

6. The system of claim 1 , wherein the first non-silicon material includes at least one of carbon, tin, silver, aluminum, indium, titanium, thallium, copper, or any combination thereof.

7. The system of claim 1 , wherein the transport system is configured to transport the substrate between the first deposition station and the second deposition station in an alternating manner.

8. A system configured to make a thin film battery, the system comprising:

a chamber comprising:

a first deposition station that includes a first deposition source configured to deposit silicon on a substrate;

a second deposition station that includes a second deposition source configured to deposit a first non-silicon material on the substrate;

a third deposition station that includes a third deposition source configured to deposit silicon on the substrate; and

a fourth deposition station that includes a fourth deposition source configured to deposit a second non-silicon material on the substrate, wherein the second non-silicon material is different from the first non-silicon material;

a transport system configured to transport the substrate to the first deposition station, the second deposition station, the third deposition station, and the fourth deposition station; and

a controller including one or more computer readable storage media having instructions stored thereon that are configured to cause the system to perform operations, the operations comprising forming, within the chamber, a thin film anode layer on a solid electrolyte layer of a thin film battery, wherein the forming of the thin film anode layer, as caused by the instructions, includes:

transporting, by the transport system, the substrate to the first deposition station;

depositing, by the first deposition source, silicon on the electrolyte layer to form a first layer on the electrolyte layer that consists of silicon;

transporting, by the transport system after forming the first layer, the substrate from the first deposition station to the second deposition station;

depositing, by the second deposition source, the first non-silicon material on the first layer to form a second layer on the first layer;

transporting, by the transport system after forming the second layer, the substrate from the second deposition station to the third deposition station;

depositing, by the third deposition source, silicon on the second layer to form a third layer on the second layer that consists of silicon;

transporting, by the transport system after forming the third layer, the substrate from the third deposition station to the fourth deposition station; and

depositing, by the fourth deposition source, the second non-silicon material on the third layer to form a fourth layer on the third layer.

9. The system of claim 8 , further comprising:

a current collector station configured to form one or more current collectors on the substrate;

a cathode station configured to form a cathode layer on the substrate;

an electrolyte station configured to form the electrolyte layer; and

an anode station that includes the chamber and that is configured to form the thin film anode layer.

10. The system of claim 9 , wherein the operations further comprise:

transporting the substrate to the current collector station;

forming, by the current collector station, a first current collector on the substrate;

transporting the substrate from the current collector station to the cathode station;

forming, by the cathode station, the cathode layer on the first current collector;

transporting the substrate from the cathode station to the electrolyte station;

forming, by the electrolyte station, the electrolyte layer on the cathode layer;

transporting the substrate from the electrolyte station to the anode station;

forming, by the anode station, the thin film anode layer;

transporting the substrate from the anode station to the current collector station; and

forming, by the current collector station, a second current collector on the thin film anode layer.

11. The system of claim 8 , wherein the chamber further includes a gas curtain between the first deposition station and the second deposition station.

12. The system of claim 8 , wherein the chamber further includes a partial wall between the first deposition station and the second deposition station.

13. The system of claim 8 , wherein the first non-silicon material includes at least one of carbon, tin, silver, aluminum, indium, titanium, thallium, copper, or any combination thereof.

14. The system of claim 8 , wherein the second non-silicon material includes at least one of carbon, tin, silver, aluminum, indium, titanium, thallium, copper, or any combination thereof.