Method for potting an electrical component
A high frequency inductor filter cooling apparatus, method of manufacture, and method of use thereof is described. In one embodiment, an inductor is potted in an epoxy-silica mixture to facilitate thermal transfer from the inductor. The inductor is optionally used with a capacitor to filter/invert/convert power. The inductor optionally comprises a distributed gap core and/or a powdered core material. In one example, a minimum carrier frequency used with the filter is above that usable by a traditional wound iron-steel inductor, such as greater than seven hundred or ten thousand Hertz at fifty or more amperes. Optionally, the inductor is used in an inverter/converter apparatus in conjunction with a notched low-pass filter, a low pass filter combined with a notch filter and a high frequency roll off filter, and/or one or more of a silicon carbide, gallium arsenide, and/or gallium nitride based transistor.
1. A method for potting an electrical component, comprising the steps of:
placing said electrical component in a housing;
preheating both a potting agent and a heat transfer agent to in excess of ninety-five degrees Fahrenheit;
mixing said potting agent, comprising a thermal conductivity of less than 0.3 W/m-K, with said heat transfer agent, comprising a thermal conductivity of greater than 0.5 W/m-K, to form a potting material; and
dispensing said potting material about said electrical component in said housing to form a potted electrical component, said potting material positioned about said electrical component, within said housing, and within a quarter inch of said electrical component,
wherein said heat transfer agent comprises particles, wherein ninety-five percent of said particles comprise a diameter of less than 1500 micrometers,
wherein said potting agent comprises at least thirty percent by mass of said potting material, and
wherein said heat transfer agent comprises at least thirty percent by mass of said potting material.
2. The method of claim 1 , said potted electrical component comprising an inductor, said inductor further comprising:
a distributed gap inductor core material, comprising:
a plurality of layered particles, a first set of alternating layers of said layered particles comprising a magnetic material, a second set of alternating layers of said layered particles comprising a substantially non-magnetic material; and
a gap material between said plurality of layered particles, said gap material forming an average closest distance between two adjacent particles, of said layered particles, of less than one millimeter,
wherein a majority of said layered particles comprise average layer thicknesses of less than one millimeter; and
a winding, said winding circumferentially surrounding at least a portion of said inductor core, said potting material within one millimeter of an outer surface of said winding,
wherein said heat transfer agent comprises greater than seventy-five percent silicon dioxide.
3. The method of claim 2 , further comprising the step of:
electrically connecting said inductor and a capacitor to a high frequency converter comprising a switching device, said switching device comprising:
a silicon carbide metal-oxide-semiconductor field-effect transistor, said high frequency converter configured to yield: (1) current of at least fifty amperes; (2) voltage of at least one hundred volts; and (3) high frequency harmonics in a range greater than fifty kiloHertz.
4. The method of claim 1 , further comprising the step of:
embedding at least one cooling line in said potting material, said cooling line configured for use cooling an inductor, said potted electrical component comprising said inductor.
5. The method of claim 1 , further comprising the step of:
configuring said potted electrical component and a capacitor to deliver filtered primary power of at least 50 amperes at greater than 740 Hz to a permanent magnet motor, said potted electrical component comprising a potted inductor, said filtered primary power comprising a harmonic at 2000 Hz attenuated by at least 60 dB.
6. The method of claim 5 , said potting material comprising at least ten percent by weight silicon dioxide, said potting material comprising a solid material in contact with said inductor.