Steep-switch vertical field effect transistor
Embodiments of the invention are directed to a method and resulting structures for a steep-switch vertical field effect transistor (SS-VFET). In a non-limiting embodiment of the invention, a semiconductor fin is formed vertically extending from a bottom source or drain region of a substrate. A top source or drain region is formed on a surface of the semiconductor fin and a top metallization layer is formed on the top source or drain region. A bi-stable resistive system is formed on the top metallization layer. The bi-stable resistive system includes an insulator-to-metal transition material or a threshold-switching selector. The SS-VFET provides a subthreshold switching slope of less than 60 millivolts per decade.
1. A method for forming a semiconductor device, the method comprising:
forming a semiconductor fin vertically extending from a bottom source or drain region of a substrate;
forming a fin hard mask on a surface of the semiconductor fin;
forming a top spacer on sidewalls of the fin hard mask;
removing the fin hard mask to form a trench defined by the surface of the semiconductor fin and the sidewalls of the fin hard mask;
forming a top source or drain region on a surface of the semiconductor fin in the trench;
forming a top metallization layer on the top source or drain region; and
forming a bi-stable resistive system on the top metallization layer;
wherein the semiconductor device comprises a subthreshold switching slope of less than 60 millivolts per decade.
2. The method of claim 1 , wherein the top metallization layer is recessed prior to forming the bi-stable resistive system.
3. The method of claim 1 , wherein the semiconductor device comprises a subthreshold switching slope of about 5 millivolts per decade.
4. The method of claim 1 , wherein the bi-stable resistive system comprises an insulator-to-metal transition material.
5. The method of claim 4 , wherein the insulator-to-metal transition material comprises VO2, NbO2, Ca2RuO4, LaCoO3, Ti2O3, Ti3O5, SmNiO3, NdNiO3, V2O3, V4O7, Fe3O4, an oxide of the form ABO3-perovskite, and combinations thereof.
6. The method of claim 1 , wherein the bi-stable resistive system comprises a threshold-switching selector.
7. The method of claim 6 , wherein the threshold-switching selector comprises Ag-doped HfO2, Cu/HfO2, Ag/TiO2, CuxS, Ag/a-Si, AgTe/TiN/TiO2/TiN, W/CuxS, and combinations thereof.
8. The method of claim 1 , wherein the bi-stable resistive system comprises a unipolar, abrupt, reversible, and electrically triggered resistance switch between two stable resistance states.
9. The method of claim 1 further comprising forming a conductive gate over a channel region of the semiconductor fin.
10. The method of claim 9 further comprising forming a bottom spacer between the bottom source or drain region and the conductive gate.
11. The method of claim 10 further comprising forming the top spacer on the conductive gate and adjacent to sidewalls of the semiconductor fin.
12. The method of claim 11 further comprising recessing the top metallization layer below a surface of the top spacer prior to forming the bi-stable resistive system.
13. A semiconductor device comprising:
a semiconductor fin vertically extending from a bottom source or drain region of a substrate;
a conductive gate formed over a channel region of the semiconductor fin;
a top source or drain region on a surface of the semiconductor fin;
a top metallization layer on the top source or drain region;
a bottom metallization layer on the bottom source or drain region; and
a first bi-stable resistive system formed on the top metallization layer.
14. The semiconductor device of claim 13 further comprising a second bi-stable resistive system formed on the bottom metallization layer.
15. The semiconductor device of claim 14 , wherein the first and second bi-stable resistive systems each comprise an insulator-to-metal transition material or a threshold-switching selector.
16. A method for forming a semiconductor device, the method comprising:
forming a semiconductor fin vertically extending from a bottom source or drain region of a substrate;
forming a fin hard mask on a surface of the semiconductor fin;
forming a top spacer on sidewalls of the fin hard mask;
removing the fin hard mask to form a trench defined by the surface of the semiconductor fin and the sidewalls of the fin hard mask;
forming a top source or drain region on a surface of the semiconductor fin in the trench;
forming a top metallization layer on the top source or drain region; and
forming a bi-stable resistive system on the top metallization layer, the bi-stable resistive system comprising a threshold-switching selector.
17. The method of claim 16 , wherein the threshold-switching selector comprises Ag-doped HfO2, Cu/HfO2, Ag/TiO2, CuxS, Ag/a-Si, AgTe/TiN/TiO2/TiN, W/CuxS, and combinations thereof.