Bulk acoustic resonator
A bulk acoustic resonator may include a substrate; a resonating portion including a first electrode layer, a piezoelectric layer, and a second electrode layer which are sequentially stacked on the substrate, and partitioned into an active region and a non-active region; and a frame electrode layer including frame electrodes disposed within the active region to be spaced apart from each other along an outer circumference portion of the active region.
1. A bulk acoustic resonator, comprising:
a resonating portion comprising a first electrode layer, a piezoelectric layer, and a second electrode layer sequentially stacked on a substrate, wherein the substrate comprises an active region and a non-active region; and
a frame electrode layer comprising frame electrodes disposed within the active region to be spaced apart from each other along an outer circumference portion of the active region,
wherein a ratio of a length of each of the frame electrodes to a length of each of the divided portions is 20% to 200%.
2. The bulk acoustic resonator of claim 1 , wherein the frame electrode layer further comprises divided portions respectively formed between adjacent frame electrodes.
3. The bulk acoustic resonator of claim 2 , wherein, as a total length of the divided portions increases, a square value of an effective electromechanical coupling coefficient increases.
4. The bulk acoustic resonator of claim 1 , wherein the active region corresponds to a region in which the first electrode layer, the piezoelectric layer, and the second electrode layer overlap in a vertical direction.
5. The bulk acoustic resonator of claim 1 , wherein the first electrode layer and the second electrode layer are formed of one or any combination of gold (Au), titanium (Ti), tantalum (Ta), molybdenum (Mo), ruthenium (Ru), platinum (Pt), tungsten (W), aluminum (Al), nickel (Ni), and iridium (Ir), and an alloy thereof.
6. The bulk acoustic resonator of claim 1 , wherein the piezoelectric layer is formed of one or any of aluminum nitride (AlN), zinc oxide (ZnO), and lead zirconium titanium oxide (PZT; PbZrTiO).
7. The bulk acoustic resonator of claim 1 , wherein the piezoelectric layer includes a rare earth metal, and
the rare earth metal includes at least one of scandium (Sc), erbium (Er), yttrium (Y), and lanthanum (La).
8. The bulk acoustic resonator of claim 7 , wherein the piezoelectric layer includes the rare earth metal having 1 at. % to 20 at. %.
9. The bulk acoustic resonator of claim 1 , wherein the frame electrode layer is disposed on a flat portion of the second electrode layer.
10. A bulk acoustic resonator comprising:
a resonating portion comprising a first electrode layer, a piezoelectric layer, and a second electrode layer sequentially stacked on a substrate, wherein the substrate is partitioned into an active region and a non-active region; and
a frame electrode layer comprising convex portions and concave portions alternately and respectively formed within the active region, along an outer circumference portion of the active region.
11. The bulk acoustic resonator of claim 10 , wherein a thickness of each of the convex portions is thicker than that of each of the concave portions.
12. The bulk acoustic resonator of claim 10 , wherein as a total length of the concave portions increases, a square value of the effective electromechanical coupling coefficient increases.
13. The bulk acoustic resonator of claim 10 , wherein a ratio of a length of each of the convex portions to a length of each of the concave portions is 20% to 200%.
14. The bulk acoustic resonator of claim 10 , wherein the active region corresponds to a region in which the first electrode layer, the piezoelectric layer, and the second electrode layer are overlapped in a vertical direction.
15. The bulk acoustic resonator of claim 10 , wherein the piezoelectric layer comprises a rare earth metal, and
the rare earth metal comprises one or any combination of scandium (Sc), erbium (Er), yttrium (Y), and lanthanum (La).
16. The bulk acoustic resonator of claim 15 , wherein the piezoelectric layer includes the rare earth metal having 1 at. % to 20 at. %.
17. The bulk acoustic resonator of claim 10 , wherein the frame electrode layer is disposed on a flat portion of the second electrode layer.
18. A bulk acoustic resonator, comprising:
a piezoelectric layer disposed on a substrate having an active region and a non-active region, wherein the piezoelectric layer is disposed between a first electrode layer and a second electrode layer; and
a frame electrode layer disposed on the second electrode in the active region, the frame electrode layer comprising an annular arrangement of spaced protrusions,
wherein the frame electrode layer is disposed directly on a flat portion of the second electrode.
19. The bulk acoustic resonator of claim 18 , wherein the frame electrode layer is supported by an annular ring.
20. The bulk acoustic resonator of claim 18 , wherein the annular arrangement of spaced protrusions defines gaps therebetween.