Method for producing polycrystalline silicon
The rate of rod fallover in the production of polycrystalline silicon by the Siemens process is sharply reduced by cleaning the Siemens reactor base plate by at least a two-step procedure comprising suctioning the base plate in one step, and subsequently cleaning with liquid or solid cleaning medium in a second step, between each phase of rod removal and new support body installation.
1. In a process for producing polycrystalline silicon where polycrystalline silicon is deposited on support bodies heated by direct passage of current to produce polycrystalline silicon rods, wherein the support bodies are held on a bottom plate of a reactor and supplied with current via electrodes, wherein the deposition of polycrystalline silicon is terminated when the polycrystalline silicon rods have achieved a desired final diameter, wherein the polycrystalline silicon rods are subsequently removed from the reactor and the reactor is fitted with new support bodies to afford further polycrystalline silicon rods, the improvement comprising cleaning the bottom plate of the reactor after removal of the polycrystalline silicon rods from the reactor and before fitting of the reactor with new support bodies, wherein the cleaning comprises at least suctioning off the bottom plate and subsequently further cleaning the bottom plate with a liquid or solid-containing cleaning medium, after every rod removal procedure,
wherein before the cleaning of the bottom plate, openings in the bottom plate are sealed so as to be impervious to gas and water.
2. The process of claim 1 wherein following suctioning off the bottom plate, the bottom plate is cleaned with ion-free water.
3. The process of claim 2 , wherein following cleaning with ion-free water, an alcohol is added to assist in drying the bottom plate.
4. The process of claim 1 , wherein when a solid-containing cleaning medium is employed, the solid-containing cleaning medium is an oxide selected from the group consisting of silicon dioxide, aluminum oxide, carbonates, silicates, talc, pumice, and mixtures thereof.
5. In a process for producing polycrystalline silicon where polycrystalline silicon is deposited on support bodies heated by direct passage of current to produce polycrystalline silicon rods, wherein the support bodies are held on a bottom plate of a reactor and supplied with current via electrodes, wherein the deposition of polycrystalline silicon is terminated when the polycrystalline silicon rods have achieved a desired final diameter, wherein the polycrystalline silicon rods are subsequently removed from the reactor and the reactor is fitted with new support bodies to afford further polycrystalline silicon rods, the improvement comprising cleaning the bottom plate of the reactor after removal of the polycrystalline silicon rods from the reactor and before fitting of the reactor with new support bodies, wherein the cleaning comprises at least suctioning off the bottom plate and subsequently further cleaning the bottom plate with a liquid or solid-containing cleaning medium, after every rod removal procedure, wherein the cleaning of the bottom plate comprises a cleaning step with a liquid cleaning medium and the bottom plate is dried after this cleaning step,
wherein before the cleaning of the bottom plate, openings in the bottom plate are sealed so as to be impervious to gas and water.