Three-dimensional WDM with 1×M output ports on SOI based straight waveguides combined with wavelength filters on 45 degree reflectors
An optical WDM device on a substrate and a fabrication method are disclosed. The WDM device includes a broadband light source, multiple output optical receivers, and a silicon waveguide terminated with two end reflectors, and a number of sequentially arranged WDM splitters between the two end reflectors. Each of the WDM splitters has a front and rear reflectors. The first end reflector is broadband coated to input light into the waveguide. The front reflectors of the WDM splitters and the second end reflector are narrowband coated so each reflector only selects to reflect one of the wavelengths from the light source. The rear reflectors of the WDM splitters are anti-reflection coated in order to transmit the unselected light to the next stage WDM splitter. The first end reflector is aligned to the input source, the WDM splitters and the second end reflector each are sequentially aligned to the output receivers.
1. An optical WDM (wavelength division multiplexing) interconnect apparatus comprising:
a substrate having a first silicon surface and a second silicon surface substantially parallel to each other, wherein an oxide layer is embedded under the first silicon surface, and wherein an insulating layer is disposed on the second silicon surface;
an input optical source carrying a plurality of wavelengths disposed on the second silicon surface;
a first, a second, and a third output optical receivers arranged on the second silicon surface to receive a first, a second and a third of the plurality of wavelengths respectively; and
a silicon waveguide device disposed on the first silicon surface, comprising:
a first end reflector and a second end reflector on the silicon waveguide;
a first trench and a second trench each having a 45-degree first surface facing the first end reflector; and
a first and a second WDM reflectors sequentially arranged between the first and the second end reflectors along the silicon waveguide device,
wherein the first end reflector is broadband coated to reflect the plurality of wavelengths from the input optical source, wherein the first, the second sequentially arranged WDM reflectors and the second end reflector each is narrow band coated to reflect the first, the second and the third wavelengths;
wherein the first end reflector is aligned to the input optical source, wherein the first and second sequentially arranged WDM reflectors and the second end reflector each is sequentially aligned to the first, the second, and the third output optical receivers; and
wherein the first and second sequentially arranged WDM reflectors each is formed on the 45-degree first surface of the first and second trench facing the first end reflector respectively.
2. The optical WDM interconnect apparatus of claim 1 , wherein the first and the second sequentially arranged WDM reflectors and the second end reflector each comprises 45 degree micro-reflectors.
3. The optical WDM interconnect apparatus of claim 1 , wherein the silicon waveguide device is fabricated in (100) silicon crystal facet of the first silicon surface, and the micro-reflectors are formed on (110) crystal facet.
4. The optical WDM interconnect apparatus of claim 1 , wherein a layer of oxide is grown on the silicon waveguide device to form a cladding structure.
5. The optical WDM interconnect apparatus of claim 1 , wherein the input optical source is a fiber.
6. The optical WDM interconnect apparatus of claim 1 , wherein the input optical source is a broadband vertical cavity surface emission laser (VCSEL).
7. The optical WDM interconnect apparatus of claim 1 , wherein the plurality of output optical receivers comprises photodiodes (PDs), wherein the photodiodes are silicon diodes or a hybrid type of silicon and germanium diodes.
8. The optical WDM interconnect apparatus of claim 1 , wherein the silicon waveguide device further comprises a rear reflector behind each of the plurality of sequentially arranged WDM reflectors, wherein the rear reflector is coated with an anti-reflective coating to transmit light passing said sequentially arranged WDM reflector.
9. The optical WDM interconnect apparatus of claim 1 , wherein the substrate has a thickness ranging from 50 microns to 2 mm.
10. The optical WDM interconnect apparatus of claim 1 , wherein the substrate is a SOI wafer.
11. The optical WDM interconnect apparatus of claim 8 , wherein the rear reflector is a 45 degree micro-reflector.
12. The optical WDM interconnect apparatus of claim 8 , wherein the rear reflector is perpendicular to the silicon waveguide.
13. The optical WDM interconnect apparatus of claim 1 , wherein the plurality of sequentially arranged WDM reflectors each has a surface embedded in the silicon waveguide.
14. The optical WDM interconnect apparatus of claim 1 , wherein the silicon waveguide further comprises a plurality of conductive lines disposed on the insulating layer on the second silicon surface.
15. The optical WDM interconnect apparatus of claim 14 , wherein the plurality of conductive lines comprises tungsten (W), aluminum (Al), copper (Cu), gold (Au), silver (Ag), stainless steel, or an alloy.
16. The optical WDM interconnect apparatus of claim 1 , wherein the plurality of conductive lines are high speed RF transmission lines capable of operating at 25 Gbps per channel.
17. A method of fabricating an optical WDM (wavelength division multiplexing) interconnect apparatus, comprising:
providing a substrate having a first silicon surface and a second silicon surface, wherein the first silicon surface is on an embedded oxide layer;
patterning a strip-like waveguide on the first silicon surface;
patterning a first and a second 45 degree end reflectors at ends of the silicon waveguide respectively;
forming trenches on the silicon waveguide between the first and the second 45 degree end reflectors, wherein each trench has a 45 degree front surface facing the first 45 degree end reflector;
patterning a plurality of sequentially arranged WDM reflectors each on the front surface of one of the trenches;
coating the sequentially arranged WDM reflectors with narrow band high reflective coatings at a plurality of wavelengths ki (i=1, 2, 3, . . . ) respectively;
turning the substrate over to work on the second silicon surface;
depositing an insulating layer on the second silicon surface;
patterning conductive lines and solder bumps in the insulating layer on the second silicon surface;
assembling a fiber input light source and the plurality of optical receivers on the solder bumps, wherein the fiber input light source comprises the plurality of wavelengths ki (i=1, 2, 3, . . . ) and wherein the plurality of optical receivers receives the plurality of wavelengths ki (i=1, 2, 3, . . . ) respectively;
and
aligning the two 45 degree end reflectors and said WDM reflectors sequentially to the fiber input light source and the plurality of optical receivers.
18. The method of fabricating an optical WDM interconnect apparatus in claim 17 , wherein patterning the conductive lines comprises forming trenches and filling in metal in the trenches, followed by removing excess metal by polishing (CMP) or by selective etch to clean up metal outside the trenches.
19. The method of fabricating an optical WDM interconnect apparatus in claim 17 wherein patterning the conductive lines comprises depositing a metal layer, patterning the metal layer into lines, followed by removing excess metal by polishing (CMP) or by selective etch.
20. The method of fabricating an optical WDM interconnect apparatus in claim 17 , further comprising patterning a rear reflector behind each of the plurality of sequentially arranged WDM reflectors; and
coating the rear reflector with anti-reflective coating to transmit wavelengths passing said sequentially arranged WDM reflectors.