Adaptive gate-biased field effect transistor for low-dropout regulator
A load circuit of a low-dropout (LDO) regulator is disclosed herein according to certain aspects. The load circuit includes a field effect transistor having a source coupled to a supply rail, a gate, and a drain coupled to a gate of a pass transistor of the LDO regulator. The load circuit also includes an adjustable voltage source coupled between the drain and the gate of the field effect transistor, and a voltage control circuit configured to detect a change in a current load through the pass transistor, and to adjust a voltage of the adjustable voltage source based on the detected change in the current load.
1. A load circuit of a low-dropout (LDO) regulator, comprising:
a field effect transistor having a source coupled to a supply rail, a gate, and a drain coupled to a gate of a pass transistor of the LDO regulator;
an adjustable voltage source coupled between the drain and the gate of the field effect transistor; and
a voltage control circuit configured to detect a change in a current load through the pass transistor, and to adjust a voltage of the adjustable voltage source based on the detected change in the current load.
2. The load circuit of claim 1 , wherein the voltage control circuit is configured to:
detect the change in the current load by detecting a change in a source-to-gate voltage of the field effect transistor caused by the change in the current load; and
adjust the voltage of the adjustable voltage source in a direction that is opposite to a direction of the detected change in the source-to-gate voltage of the field effect transistor.
3. The load circuit of claim 1 , wherein the voltage control circuit is configured to adjust the voltage of the adjustable voltage source in a direction that reduces a sensitivity of a transconductance of the field effect transistor to the change in the current load.
4. The load circuit of claim 1 , wherein:
the LDO regulator includes an amplifier in a feedback loop of the LDO regulator; and
the drain of the field effect transistor is coupled between an output of the amplifier and the gate of the pass transistor.
5. The load circuit of claim 4 , wherein the amplifier comprises a common-gate amplifier.
6. The load circuit of claim 1 , wherein the adjustable voltage source comprises:
a resistor coupled between the drain and the gate of the field effect transistor;
a first adjustable current source coupled to a first end of the resistor; and
a second adjustable current source coupled to a second end of the resistor;
wherein the voltage control circuit is configured to adjust the voltage of the adjustable voltage source by adjusting a current of the first adjustable current source and a current of the second adjustable current source.
7. The load circuit of claim 6 , wherein the voltage control circuit comprises:
a current source configured to generate a current; and
a current sense transistor configured to generate a sense current that is proportional to a current through the field effect transistor;
wherein the voltage control circuit is configured to:
subtract the sense current from the current of the current source to generate a difference current; and
adjust the current of the first adjustable current source and the current of the second adjustable current source based on the difference current.
8. The load circuit of claim 1 , wherein a source of the pass transistor is coupled to the supply rail, and a drain of the pass transistor is coupled to an output of the LDO regulator.
9. The load circuit of claim 8 , wherein the field effect transistor comprises a first p-type field effect transistor (PFET) and the pass transistor comprises a second PFET.
10. A method of voltage regulation, comprising:
regulating a voltage using a low-dropout (LDO) regulator, wherein the LDO regulator includes a pass transistor, an amplifier in a feedback loop of the LDO regulator, and a field effect transistor having a source coupled to a supply rail, a gate, and a drain coupled between an output of the amplifier and a gate of the pass transistor;
detecting a change in a current load through the pass transistor; and
adjusting a drain-to-gate voltage of the field effect transistor based on the detected change in the current load.
11. The method of claim 10 , wherein:
detecting the change in the current load comprises detecting a change in a source-to-gate voltage of the field effect transistor caused by the change in the current load; and
adjusting the drain-to-gate voltage of the field effect transistor comprises adjusting the drain-to-gate voltage of the field effect transistor in a direction that is opposite to a direction of the detected change in the source-to-gate voltage of the field effect transistor.
12. The method of claim 10 , wherein adjusting the drain-to-gate voltage of the field effect transistor comprises adjusting the drain-to-gate voltage of the field effect transistor in a direction that reduces a sensitivity of a transconductance of the field effect transistor to the change in the current load.
13. The method of claim 10 , wherein the amplifier comprises a common-gate amplifier.
14. The method of claim 10 , wherein a source of the pass transistor is coupled to the supply rail, and a drain of the pass transistor is coupled to an output of the LDO regulator.
15. The method of claim 10 , wherein the field effect transistor comprises a first p-type field effect transistor (PFET) and the pass transistor comprises a second PFET.
16. A low-dropout (LDO) regulator, comprising:
a pass transistor having a source coupled to a supply rail, a gate, and a drain coupled to an output of the LDO regulator;
an amplifier having an output and an input, wherein the input of the amplifier is coupled to the output of the LDO regulator via a feedback path;
a first switch between the output of the amplifier and the gate of the pass transistor;
a second switch between the gate of the pass transistor and a ground; and
a mode controller configured to:
operate the LDO regulator in a voltage-regulation mode by turning on the first switch and turning off the second switch; and
operate the LDO regulator in a power-switch mode by turning off the first switch and turning on the second switch.
17. The LDO regulator of claim 16 , further comprising:
a flipped source follower transistor in the feedback path, wherein the flipped source follower transistor has a source coupled to the output of the LDO regulator, a gate, and a drain coupled to the input of the amplifier; and
wherein the flipped source follower transistor is configured to set a regulated voltage at the output of the LDO regulator based on a set voltage input to the gate of the flipped source follower transistor.
18. The LDO regulator of claim 17 , further comprising a current source coupled between the drain of the flipped source follower transistor and the ground.
19. The LDO regulator of claim 16 , wherein:
the input of the amplifier comprises a first input and a second input;
the first input is coupled to the output of the LDO regulator via the feedback path; and
the second input is coupled to a reference voltage.
20. The LDO regulator of claim 16 , wherein the mode controller is configured to:
receive a signal indicating one of multiple supply voltage levels, the multiple supply voltage levels including a first voltage level and a second voltage level;
operate the LDO regulator in the voltage-regulation mode if the signal indicates the first voltage level; and
operate the LDO regulator in the power-switch mode if the signal indicates the second voltage level.
21. The LDO regulator of claim 20 , wherein the second voltage level is below the first voltage level.