IP Library › Granted Patent US 12,422,872
Granted Patent B2
US 12,422,872 · App. 18/192,560 · Granted Sep 23, 2025

Fast settling voltage regulator

Inventor: Luca Ravezzi (Santa Clara, CA)
Assignee: Advanced Micro Devices, Inc.
G05F1/575G05F1/565G05F3/247G05F3/262
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Quick Facts
Patent No.
US 12,422,872
App. No.
18/192,560
Granted
Sep 23, 2025
Kind
B2
Abstract

The disclosed voltage regulator circuit includes an NMOS as the main power device that is coupled to a regulated voltage output. A sensing circuit senses the regulated voltage output, and a reference voltage circuit supplies a correct bias to the flipped-source follower, which amplifies the sensed voltage output. A voltage inversion circuit such as a current mirror provides an inverting gain stage for the sensed voltage output, for driving the NMOS. Various other methods, systems, and computer-readable media are also disclosed.

Claims (31)

1. A voltage regulator circuit comprising:

a negative-channel metal-oxide semiconductor (NMOS) coupled to a regulated voltage output of the voltage regulator circuit;

a sensing circuit for sensing the regulated voltage output;

a reference voltage circuit for supplying a correct bias voltage to the sensing circuit; and

a voltage inversion circuit coupled between the sensing circuit and the NMOS, wherein the voltage inversion circuit lacks a resistor.

2. The voltage regulator circuit of claim 1 , wherein the sensing circuit comprises a flipped-source follower circuit coupled between the voltage inversion circuit and the reference voltage circuit and configured to amplify the sensed regulated voltage output.

3. The voltage regulator circuit of claim 2 , wherein the flipped-source follower circuit comprises a positive-channel metal-oxide semiconductor (PMOS).

4. The voltage regulator circuit of claim 2 , wherein the flipped-source follower circuit is configured to invert the reference voltage supplied by the reference voltage circuit.

5. The voltage regulator circuit of claim 4 , wherein the voltage inversion circuit is configured to invert the inverted reference voltage from the flipped-source follower circuit.

6. The voltage regulator circuit of claim 5 , wherein the regulated voltage output at the NMOS is not coupled to a capacitor.

7. The voltage regulator circuit of claim 1 , wherein the voltage inversion circuit comprises a current mirror providing an inverting gain stage for the sensed regulated voltage output.

8. The voltage regulator circuit of claim 7 , wherein the current mirror corresponds to an NMOS-based current mirror.

9. The voltage regulator circuit of claim 1 , wherein the NMOS is directly coupled to the regulated voltage output.

10. A device comprising:

a negative-channel metal-oxide semiconductor (NMOS) coupled to a regulated voltage output of a voltage regulator circuit;

a flipped-source follower circuit coupled between a reference voltage circuit and the NMOS for sensing the regulated voltage output;

the reference voltage circuit for supplying a correct bias to the flipped-source follower circuit; and

a voltage inversion circuit coupled between the flipped-source follower circuit and the NMOS, wherein the voltage inversion circuit lacks a resistor.

11. The device of claim 10 , wherein the flipped-source follower circuit comprises a positive-channel metal-oxide semiconductor (PMOS).

12. The device of claim 10 , wherein the flipped-source follower circuit is configured to invert the reference voltage supplied by the reference voltage circuit.

13. The device of claim 12 , wherein the voltage inversion circuit is configured to invert the inverted reference voltage from the flipped-source follower circuit.

14. The device of claim 10 , wherein the voltage inversion circuit comprises a current mirror providing an inverting gain stage of the sensed regulated voltage output.

15. The device of claim 14 , wherein the current mirror corresponds to an NMOS-based current mirror.

16. The device of claim 10 , wherein the NMOS is directly coupled to the regulated voltage output.

17. The device of claim 16 , wherein the regulated voltage output at the NMOS is not coupled to a capacitor.

18. A method comprising:

sensing, by a sensing circuit coupled between a reference voltage circuit for supplying a reference voltage and a voltage regulator circuit comprising a negative-channel metal-oxide semiconductor (NMOS) directly coupled to a voltage output of the voltage regulator circuit, the voltage output;

providing an inverted signal by inverting and amplifying, via a voltage inversion circuit coupled between the sensing circuit and the NMOS, the sensed voltage output from the sensing circuit, wherein the voltage inversion circuit lacks a resistor; and

outputting, via the NMOS, a regulated voltage output based on the inverted signal.

19. The method of claim 18 , further comprising supplying, by the reference voltage circuit, a correct bias to the sensing circuit.

20. The method of claim 18 , further comprising amplifying without inverting, by the sensing circuit, the sensed voltage output.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2023
From: RAVEZZI, LUCA
To: ADVANCED MICRO DEVICES, INC.
Reel/Frame 063162/0794 →
Continuity (1)
Related Publication 20250208640A1 · Jun 26, 2025
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