Circuit, driving method thereof, and semiconductor device
A circuit includes a current mirror circuit (CM circuit) including first and second transistors, a third transistor whose drain is electrically connected to a drain of the second transistor, a switch controlling the current output from the circuit, and first and second memory circuits. A reference current of the CM circuit is input to a drain of the first transistor; a current that is a copy of the reference current is output from the drain of the second transistor. When a current is output from the circuit, the reference current is not input to the CM circuit. A drain current corresponding to a voltage stored in the first memory circuit flows through the second transistor; a drain current corresponding to a voltage stored in the second memory circuit flows through the third transistor. The difference between the two drain currents corresponds to the output current of the circuit.
1. A circuit comprising:
an output terminal;
a current mirror circuit comprising a first transistor and a second transistor;
a third transistor;
a switch;
a first memory circuit; and
a second memory circuit,
wherein a first voltage is input to a first terminal of the first transistor and a first terminal of the second transistor,
wherein a second voltage is input to a first terminal of the third transistor,
wherein a reference current is input to a second terminal of the first transistor,
wherein a second terminal of the second transistor and a second terminal of the third transistor are electrically connected to each other,
wherein the switch is configured to control an electrical connection between the second terminal of the second transistor and the output terminal,
wherein a third voltage stored in the first memory circuit is input to a gate of the second transistor, and
wherein a fourth voltage stored in the second memory circuit is input to a gate of the third transistor.
2. The circuit according to claim 1 ,
wherein the first memory circuit comprises a first capacitor and a fourth transistor,
wherein the first capacitor is electrically connected to the gate of the second transistor,
wherein the fourth transistor is configured to bring the gate of the second transistor into an electrically floating state,
wherein the second memory circuit comprises a second capacitor and a fifth transistor,
wherein the second capacitor is electrically connected to the gate of the third transistor, and
wherein the fifth transistor is configured to bring the gate of the third transistor into an electrically floating state.
3. The circuit according to claim 2 ,
wherein a first terminal of the fourth transistor is electrically connected to a gate of the first transistor, and
wherein a second terminal of the fourth transistor is electrically connected to the gate of the second transistor.
4. The circuit according to claim 2 ,
wherein a first terminal of the fourth transistor is electrically connected to the second terminal of the first transistor, and
wherein a second terminal of the fourth transistor is electrically connected to a gate of the first transistor and the gate of the second transistor.
5. The circuit according to claim 2 , wherein a channel formation region of the fourth transistor and a channel formation region of the fifth transistor each comprise an oxide semiconductor.
6. The circuit according to claim 2 ,
wherein a first terminal of the fifth transistor is electrically connected to the gate of the third transistor, and
wherein a second terminal of the fifth transistor is electrically connected to the second terminal of the third transistor.
7. The circuit according to claim 6 ,
wherein a first terminal of the fourth transistor is electrically connected to a gate of the first transistor, and
wherein a second terminal of the fourth transistor is electrically connected to the gate of the second transistor.
8. The circuit according to claim 6 ,
wherein a first terminal of the fourth transistor is electrically connected to the second terminal of the first transistor, and
wherein a second terminal of the fourth transistor is electrically connected to a gate of the first transistor and the gate of the second transistor.
9. The circuit according to claim 3 , wherein a channel formation region of the fourth transistor and a channel formation region of the fifth transistor each comprise an oxide semiconductor.
10. The circuit according to claim 1 , further comprising a sixth transistor,
wherein the first voltage is input to a first terminal of the sixth transistor, and
wherein a second terminal of the sixth transistor is electrically connected to the second terminal of the first transistor.
11. The circuit according to claim 1 , wherein the input of the reference current to the second terminal of the first transistor is stopped when a current is output from the output terminal.
12. A semiconductor device comprising a signal processing circuit executing orthogonal transform,
wherein the signal processing circuit comprises a multiplier circuit and the circuit according to claim 1 , and
wherein an output of the circuit is input to the multiplier circuit.
13. A semiconductor device comprising a decoder and a display device,
wherein the decoder comprises a multiplier circuit and the circuit according to claim 1 , and
wherein an output of the circuit is input to the multiplier circuit.
14. A semiconductor device comprising an encoder,
wherein the encoder comprises a multiplier circuit and the circuit according to claim 1 , and
wherein an output of the circuit is input to the multiplier circuit.
15. A method for driving a circuit, the circuit comprising:
an output terminal;
a current mirror circuit comprising a first transistor and a second transistor;
a third transistor;
a switch;
a first memory circuit; and
a second memory circuit,
wherein a first voltage is input to a first terminal of the first transistor and a first terminal of the second transistor,
wherein a second voltage is input to a first terminal of the third transistor,
wherein a reference current is input to a second terminal of the first transistor,
wherein a second terminal of the second transistor and a second terminal of the third transistor are electrically connected to each other,
wherein the switch is configured to control an electrical connection between the second terminal of the second transistor and the output terminal,
wherein a third voltage stored in the first memory circuit is input to a gate of the second transistor, and
wherein a fourth voltage stored in the second memory circuit is input to a gate of the third transistor,
the method for driving the circuit comprising steps of:
a first step in which a gate voltage of the third transistor at the time when a first reference current is input to the second terminal of the first transistor is stored in the second memory circuit;
a second step which follows the first step and in which a gate voltage of the second transistor at the time when a second reference current is input to the second terminal of the first transistor is stored in the first memory circuit; and
a third step which follows the second step and in which, in a state in which the input of the reference current to the second terminal of the first transistor is stopped, the switch is turned on so that a current is output from the output terminal.
16. A semiconductor device comprising:
a circuit comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a first capacitor;
a second capacitor; and
a switch,
wherein a first voltage is input to a first terminal of the first transistor,
wherein the first voltage is input to a first terminal of the second transistor,
wherein a second voltage is input to a first terminal of the third transistor,
wherein a reference current is input to a second terminal of the first transistor,
wherein a second terminal of the second transistor is electrically connected to a second terminal of the third transistor,
wherein the switch is configured to control an electrical connection between the second terminal of the second transistor and an output terminal of the circuit,
wherein a gate of the first transistor is electrically connected to the second terminal of the first transistor,
wherein a first terminal of the fourth transistor is electrically connected to a gate of the first transistor,
wherein a second terminal of the fourth transistor is electrically connected to a gate of the second transistor,
wherein a first electrode of the first capacitor is electrically connected to the gate of the second transistor,
wherein a second electrode of the first capacitor is electrically connected to the first terminal of the second transistor,
wherein a first terminal of the fifth transistor is electrically connected to a gate of the third transistor,
wherein a second terminal of the fifth transistor is electrically connected to the second terminal of the third transistor,
wherein a first electrode of the second capacitor is electrically connected to the gate of the third transistor, and
wherein a second electrode of the second capacitor is electrically connected to the first terminal of the third transistor.
17. The semiconductor device according to claim 16 , wherein a channel formation region of the fourth transistor and a channel formation region of the fifth transistor each comprise an oxide semiconductor.