Selective growth method

1. A selective growth method of selectively growing a thin film on an underlayer on which an insulating film and a conductive film are exposed, comprising:

preparing a workpiece having the underlayer on which the insulating film and the conductive film are exposed; and

selectively growing a silicon-based insulating film on the insulating film by repeating a cycle a plurality of times, the cycle including:

a first step of adsorbing an aminosilane-based gas onto the insulating film and the conductive film; and

a second step of supplying a reaction gas to the workpiece such that the silicon-based insulating film is formed on the insulating film by the reaction gas acting on the aminosilane-based gas adsorbed onto the insulating film, and the conductive film is vaporized and reduced in thickness by the reaction gas acting on the conductive film.

2. The method of claim 1 , further comprising: removing the grown silicon-based insulating film or the grown conductive film.

3. The method of claim 1 , wherein the aminosilane-based gas contains two or more hydrocarbon groups existing in one molecule.

4. The method of claim 3 , wherein the aminosilane-based gas contains four or more methyl groups existing in one molecule when the hydrocarbon group is a methyl group.

5. The method of claim 1 , wherein the silicon-based insulating film is a silicon oxide film, the reaction gas is an oxidizing agent, and the conductive film is made of a material which is oxidized by the oxidizing agent and is vaporized.

6. The method of claim 5 , wherein the conductive film is a ruthenium film or a carbon film.

7. The method of claim 5 , wherein the oxidizing agent is selected from an ozone gas, an O 2 gas, an O 2 /H 2 mixed gas, and an H 2 O gas.

8. The method of claim 1 , wherein the silicon-based insulating film is a silicon nitride film, the reaction gas is a nitriding agent, and the conductive film is made of a material which is nitrided by the nitriding agent and is vaporized.

9. The method of claim 8 , wherein the conductive film is a germanium film.

10. The method of claim 8 , wherein the nitriding agent is selected from an ammonia gas, a hydrazine-based gas, and a hydrogen gas.

11. A selective growth method of selectively growing a thin film on an underlayer on which an insulating film and a conductive film are exposed, comprising:

preparing a workpiece having the underlayer on which the insulating film and the conductive film are exposed;

selectively growing a silicon-based insulating film on the insulating film by repeating a cycle a plurality of times, the cycle including:

a first step of adsorbing an aminosilane-based gas onto the insulating film and the conductive film; and

a second step of supplying a reaction gas to form to the workpiece such that the silicon-based insulating film is formed on the insulating film by the reaction gas acting on the aminosilane-based gas adsorbed onto the insulating film, and the conductive film is vaporized and reduced in thickness by the reaction gas acting on the conductive film; and

subsequently, selectively growing the conductive film,

wherein the selectively growing a silicon-based insulating film and the selectively growing the conductive film are performed a predetermined number of times.

12. The method of claim 11 , wherein the method is ended in either of the selectively growing a silicon-based insulating film and the selectively growing the conductive film.

13. A selective growth method of selectively growing a thin film on an underlayer on which an insulating film and a first conductive film are exposed, comprising:

preparing a workpiece having the underlayer on which the insulating film and a metal film as the first conductive film are exposed;

selectively growing a second conductive film on the metal film; and

selectively growing a silicon-based insulating film on the insulating film by repeating a cycle a plurality of times, the cycle including:

a first step of adsorbing an aminosilane-based gas onto the insulating film and the second conductive film; and

a second step of supplying a reaction gas to the workpiece such that the silicon-based insulating film is formed on the insulating film by the reaction gas acting on the aminosilane-based gas adsorbed onto the insulating film, and the second conductive film is vaporized and reduced in thickness by reaction with the reaction gas acting on the second conductive film.

14. The method of claim 13 , wherein the metal film is made of a material selected from a group consisting of tungsten (W), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), zinc (Zn), gallium (Ga), germanium (Ge), silicon (Si), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), hafnium (Hf), rhodium (Rh), palladium (Pd), indium (In), tin (Sn), tantalum (Ta), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), and gold (Au).

15. A selective growth method of selectively growing a thin film on an underlayer on which an insulating film and a first conductive film are exposed, comprising:

preparing a workpiece having the underlayer on which the insulating film and a metal film as the first conductive film are exposed;

selectively growing a second conductive film on the metal film;

selectively growing a silicon-based insulating film on the insulating film by repeating a cycle a plurality of times, the cycle including:

a first step of adsorbing an aminosilane-based gas onto the insulating film and the second conductive film; and

a second step of supplying a reaction gas to the workpiece such that the silicon-based insulating film is formed on the insulating film by the reaction gas acting on the aminosilane-based gas adsorbed onto the insulating film, and the second conductive film is vaporized and reduced in thickness by the reaction gas acting on the second conductive film; and

selectively growing the second conductive film,

wherein the selectively growing a silicon-based insulating film and the selectively growing the second conductive film are performed a predetermined number of times.