Forming low resistivity fluorine free tungsten film without nucleation
Methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a fluorine-free tungsten precursor and hydrogen in cycles of temporally separated pulses, are provided. Some methods involve depositing fluorine-free tungsten by sequential CVD without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface. Methods also include depositing a tungsten layer using a reducing agent and fluorine-free tungsten-containing precursor and depositing bulk tungsten in sequential CVD cycles of alternating pulses of hydrogen and a tungsten-containing precursor.
1. A method comprising:
depositing a tungsten layer on a substrate by
exposing the substrate to a first reducing agent, and
exposing the substrate to a fluorine-free tungsten-containing precursor;
depositing a first bulk tungsten layer in one or more cycles on the tungsten layer, wherein a cycle comprises:
exposing the substrate to hydrogen, and
exposing the substrate to a tungsten-containing precursor; and
exposing the substrate to a second reducing agent and a third tungsten-containing precursor simultaneously to deposit a second bulk tungsten layer.
2. The method of claim 1 , wherein the fluorine-free tungsten-containing precursor is selected from the group consisting of metal-organic tungsten-containing precursors and tungsten hexacarbonyl.
3. The method of claim 1 , wherein the fluorine-free tungsten-containing precursor is a chlorine-containing tungsten precursor.
4. The method of claim 3 , wherein the chlorine-containing tungsten precursor is selected from the group consisting of tungsten hexachloride and tungsten pentachloride.
5. The method of claim 1 , wherein the tungsten layer is deposited to a thickness between about 2 Å and about 100 Å.
6. The method of claim 1 , wherein each of the one or more cycles forms a submonolayer having a thickness of at least about 0.3 Å.
7. The method of claim 1 , wherein the exposing the substrate to the first reducing agent and the exposing the substrate to the fluorine-free tungsten-containing precursor is performed in alternating pulses.
8. The method of claim 7 , wherein the fluorine-free tungsten-containing precursor is a chlorine-containing tungsten precursor, and a pulse of the chlorine-containing tungsten precursor comprises between about 0.1% and about 1.5% of chlorine-containing tungsten precursor by volume.
9. The method of claim 7 , wherein a chamber housing the substrate is purged between each pulse of the first reducing agent and the fluorine-free tungsten-containing precursor.
10. The method of claim 1 , wherein one cycle of depositing the first bulk tungsten layer forms a submonolayer of the first bulk tungsten layer having a thickness of at least about 0.3 Å.
11. The method of claim 1 , wherein the first and second bulk tungsten layers are deposited at a substrate temperature between about 400° C. and about 600° C.
12. The method of claim 1 , wherein a chamber housing the substrate is purged between each exposing the substrate to the hydrogen and exposing the substrate to the fluorine-free tungsten-containing precursor.
13. The method of claim 12 , wherein each purge is performed for a duration between about 0.25 seconds and about 30 seconds.
14. The method of claim 1 , wherein the tungsten-containing precursor used in the one or more cycles for depositing the first bulk tungsten layer is a chlorine-containing tungsten precursor.
15. The method of claim 14 , wherein the chlorine-containing tungsten precursor is selected from the group consisting of tungsten hexachloride and tungsten pentachloride.
16. The method of claim 14 , wherein between about 0.1% and about 1.5% of chlorine-containing tungsten precursor by volume is used during the exposing of the substrate to the chlorine-containing tungsten precursor during one of the more or more cycles for depositing the first bulk tungsten layer.
17. The method of claim 1 , wherein the first bulk tungsten layer is deposited to a thickness of less than about 50 Å and resistivity of the first bulk tungsten layer is less than about 150 μΩ-cm.
18. The method of claim 1 , wherein at least one of the first and the second reducing agent is selected from the group consisting of germane, argon, tungsten hexafluoride, diborane, hydrogen, nitrogen, and combinations thereof.
19. A method comprising:
depositing a tungsten nucleation layer on a substrate by
exposing the substrate to a first reducing agent, and
exposing the substrate to a chlorine-containing tungsten-containing precursor;
depositing a first bulk tungsten layer on the tungsten nucleation layer by
exposing the substrate to a second reducing agent, and
exposing the substrate to a fluorine-free tungsten-containing precursor; and
depositing a second bulk tungsten layer in one or more cycles on the first bulk tungsten layer, wherein a cycle comprises:
exposing the substrate to hydrogen, and
exposing the substrate to a chlorine-containing tungsten precursor.