Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs
An interconnect structure having a pitch of less than 40 nanometers and a self-aligned quadruple patterning process for forming the interconnect structure includes three types of lines: a β line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process; a γ line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and an α line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process. The interconnect structure further includes multi-track jogs selected from a group consisting of a βγβ jog; a βαβ jog; and αβγ jog; a γβα jog, and combinations thereof. The first and third positions refer to the uncut line and the second position refers to the cut line in the self-aligned quadruple patterning process.
1. An interconnect structure including multi-track jogs produced by a self-aligned quadruple patterning process having a pitch less than 40 nm, the interconnect structure comprising three types of lines:
a β line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process;
a γ line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and
an α line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process.
2. The interconnect structure of claim 1 , wherein the multitrack jogs are selected from a group consisting of: a βγβ jog; a βαβ jog; an αβγ jog; a γβα jog, and combinations thereof.
3. The interconnect structure of claim 1 , wherein the multitrack jogs are formed by a single cut.
4. The interconnect structure of claim 2 , wherein the βγβ jog is formed by cutting at least one of the top mandrel structures to provide a gap corresponding to a γ jog, wherein the gap is smaller than two times a thickness of the top spacer structure; and filling the gap with the dielectric material.
5. The interconnect structure of claim 2 , wherein the βαβ jog are formed by cutting at least one of the top non-mandrel backfilled spaces to provide a gap corresponding to an α jog, wherein the gap is filled with a filler material etch selective to the top mandrel and the top non-mandrel material.
6. The interconnect structure of claim 2 , where the αβγ and the γβα jogs are formed by cutting at least one of the bottom mandrel structures to provide a gap corresponding to a β jog; forming a bottom spacer structure with a bottom dielectric material adjacent to sidewalls of the top mandrel features, wherein the gap is larger than two times a thickness of the bottom spacer structure.
7. The interconnect structure of claim 1 , wherein the top non-mandrel material comprises silicon containing anti-reflective coatings (ARC) spin on films, metallic spin on films, or spin on films that contain rare earth elements.
8. The interconnect structure of claim 4 , wherein the dielectric material comprises silicon nitride, or silicon dioxide.
9. The interconnect structure of claim 1 , wherein the bottom dielectric material is a conformally deposited by atomic layer deposition or molecular layer deposition.