Electronic device and method for fabricating the same using treatment with nitrogen and hydrogen
A method for fabricating an electronic device including a semiconductor memory includes: forming a variable resistance element over a substrate, the variable resistance element including a metal-containing layer and an MTJ (Magnetic Tunnel Junction) structure which is located over the metal-containing layer and includes a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; forming an initial spacer containing a metal over the variable resistance element; performing an oxidation process to transform the initial spacer into a middle spacer including an insulating metal oxide; and performing a treatment using a gas or plasma including nitrogen and hydrogen to transform the middle spacer produced by the oxidation process into a final spacer including an insulating metal nitride or an insulating metal oxynitride.
1. A method for fabricating an electronic device including a semiconductor memory, comprising:
forming a variable resistance element over a substrate, the variable resistance element including a metal-containing layer and an MTJ (Magnetic Tunnel Junction) structure which is located over the metal-containing layer and includes a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer;
forming an initial spacer containing a metal over the variable resistance element;
performing an oxidation process to transform the initial spacer into a middle spacer including an insulating metal oxide; and
performing a treatment using a gas or plasma including nitrogen and hydrogen to transform the middle spacer produced by the oxidation process into a final spacer including an insulating metal nitride or an insulating metal oxynitride.
2. The method according to claim 1 , wherein the performing of the oxidation process includes performing an over-oxidation process, and providing an oxidized surface portion of the variable resistance element.
3. The method according to claim 2 , wherein the performing of the treatment includes reducing the oxidized surface portion of the variable resistance element.
4. The method according to claim 2 , wherein the performing of the oxidation process further includes performing a natural oxidation.
5. The method according to claim 1 , wherein the initial spacer and the metal-containing layer include the metal.
6. The method according to claim 1 , further comprising, after performing of the oxidation process and before the performing the treatment, forming an additional spacer over the middle spacer.
7. The method according to claim 6 , wherein the additional spacer has a thickness thinner than that of the middle spacer.
8. The method according to claim 6 , wherein the additional spacer is porous in comparison with the middle spacer.
9. The method according to claim 6 , wherein the additional spacer includes a silicon oxide, a silicon nitride or a combination thereof.
10. The method according to claim 1 , further comprising, after performing of the oxidation process and before the performing the treatment, performing a first treatment using a gas or plasma which includes nitrogen to a surface portion or whole of the middle spacer.
11. The method according to claim 10 , further comprising, after performing of the oxidation process and the first treatment and before the performing the treatment, performing a second treatment using a gas or plasma which includes oxygen.
12. The method of claim 1 , wherein the performing of the oxidation process includes oxidizing a portion of the variable resistance element.
13. The method of claim 12 , wherein the performing of the treatment includes reducing the oxidized portion of the variable resistance element.