Method for producing silicon nitride film and silicon nitride film
One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film ( 30 ) by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber ( 40 ) accommodating the substrate ( 20 ) is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber ( 40 ) is adjusted to be in a range of 0.2 to 3.5 W/cm 2 .
1. A method for producing a silicon nitride film having the following film properties (a) to (c) on a substrate having a temperature of 250° C. or lower by using an organosilane gas as a raw material gas by a plasma chemical vapor deposition method,
wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used,
a pressure in a process chamber accommodating the substrate is adjusted to be in a range of 35 to 400 Pa, and
a density of high-frequency electric power applied to an electrode installed in the process chamber is adjusted to be in a range of 0.2 to 3.5 W/cm 2 ,
(a) an etching rate by a hydrofluoric acid solution is 10 nm/min or lower,
(b) a formation rate of a silicon oxide while being exposed to a saturated water vapor atmosphere at 208 kPa and 121° C. is 2 nm/hour or lower in terms of a silicon oxide film, and
(c) an internal stress in the film is in the range of −1000 to 1000 MPa,
wherein the organosilane gas is represented by a formula (R 1 R 2 N) n SiH 4-n , and wherein R 1 and R 2 are each independently a hydrocarbon group and n is any one of 2, 3 and 4.
2. The method for producing a silicon nitride film according to claim 1 , wherein a linear velocity of the processing gas introduced into the process chamber is adjusted to be in a range of 0.3 to 5.0 cm/sec.
3. The method for producing a silicon nitride film according to claim 1 , wherein the hydrocarbon group is a methyl group or an ethyl group.
4. The method for producing a silicon nitride film according to claim 1 , wherein the organosilane gas contains at least one selected from the group consisting of tetrakis(dimethylamino)silane, tris(dimethylamino)silane, bis(dimethylamino)silane, tetrakis(diethylamino)silane, tris(diethylamino)silane, bis(diethylamino)silane, tetrakis(ethylmethylamino)silane, tris(ethylmethylamino)silane, and bis(ethylmethylamino)silane.
5. The method for producing a silicon nitride film according to claim 1 , wherein the hydrogen reducing gas includes a hydrogen atom.
6. The method for producing a silicon nitride film according to claim 5 , wherein the hydrogen reducing gas contains at least one selected from the group consisting of ammonia, amine, and hydrocarbon.
7. The method for producing a silicon nitride film according to claim 2 , wherein the hydrogen reducing gas includes a hydrogen atom.
8. The method for producing a silicon nitride film according to claim 3 , wherein the hydrogen reducing gas includes a hydrogen atom.
9. The method for producing a silicon nitride film according to claim 4 , wherein the hydrogen reducing gas includes a hydrogen atom.
10. A silicon nitride film having following film properties (a) to (c) which is produced by a plasma chemical vapor deposition method, wherein an organosilane gas is used as a raw material gas, a film formation temperature is adjusted to 250° C. or lower, a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate with respect to the organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber accommodating a substrate is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber is adjusted to be in a range of 0.2 to 3.5 W/cm 2 ,
(a) an etching rate by a hydrofluoric acid solution is 10 nm/min or lower,
(b) a formation rate of a silicon oxide while being exposed to a saturated water vapor atmosphere at 208 kPa and 121° C. is 2 nm/hour or lower in terms of a silicon oxide film, and
(c) an internal stress in the film is in a range of −1000 to 1000 MPa,
wherein the organosilane gas is represented by a formula (R 1 R 2 N) n SiH 4-n , and wherein R 1 and R 2 are each independently a hydrocarbon group and n is any one of 2, 3 and 4.