Support pillar
The present invention disclosed a micro acoustic collector with a lateral cavity, comprising: a base metal layer; a movable film, an annular side wall; a lateral metal layer. The movable film faces towards the base metal layer to form a hollow space. The lateral metal layer is formed at a side of the movable film and around the movable film, fixed by the annular side wall and spaced apart from peripheral of the movable film by a distance, and the lateral metal layer faces towards the base metal layer to form a lateral cavity to assist an acoustic collection.
1. A micro acoustic collector with a lateral cavity, comprising:
a base metal layer;
a movable film, facing towards the base metal layer, the movable film comprising an inner-annular-supported movable film; and
a lateral metal layer, formed at a side of the movable film and around the movable film, and spaced apart from a peripheral of the movable film by a distance, and facing towards the base metal layer to form the lateral cavity to assist an acoustic collection,
wherein the inner-annular-supported movable film is connected to a plurality of support pillars to form a support, and
wherein the inner-annular-supported movable film comprises a plurality of leaf-shaped structures, each of the plurality of leaf-shaped structures having a suspended arm and a restrained arm both defined by a continuous trench, and each of the plurality of support pillars is uniformly disposed under an edge of each of the plurality of leaf-shaped structures to support the plurality of leaf-shaped structures.
2. The micro acoustic collector with the lateral cavity according to claim 1 , wherein the lateral metal layer comprises a plurality of through-vias.
3. The micro acoustic collector of the lateral cavity according to claim 1 , wherein the plurality of leaf-shaped structures are arranged with symmetry, and the plurality of leaf-shaped structures are arranged annularly.
4. The micro acoustic collector of the lateral cavity according to claim 1 , wherein the plurality of leaf-shaped structures are spaced apart from each other to form at least one central channel which is passed through a central portion of the inner-annular-supported movable film, and the at least one central channel and the plurality of leaf-shaped structures each have a plurality of through-vias.
5. The micro acoustic collector of the lateral cavity according to claim 1 , wherein each of the plurality of support pillars is formed by a metal layer coated with an insulating material.
6. The micro acoustic collector of the lateral cavity according to claim 1 , wherein the suspended arm of each of the plurality of leaf-shaped structures is selected from any of the following combinations: a straight shape, an L shape, a V shape, a square shape, a circular shape, an elliptic shape, and a heart-like shape.
7. The micro acoustic collector of the lateral cavity according to claim 1 , wherein the plurality of support pillars are annularly arranged with symmetry.
8. A complementary metal-oxide-semiconductor (CMOS) microphone single chip, comprising:
a circuit integration area;
a pad area; and
a micro acoustic collector with a lateral cavity, the micro acoustic collector comprising:
a base metal layer;
a movable film, facing towards the base metal layer, the movable film comprising an inner-annular-supported movable film; and
a lateral metal layer, formed at a side of the movable film and around the movable film, and spaced apart from a peripheral of the movable film by a distance, and facing towards the base metal layer to form the lateral cavity to assist an acoustic collection,
wherein the inner-annular-supported movable film is connected to a plurality of support pillars to form a support, and
wherein the inner-annular-supported movable film comprises a plurality of leaf-shaped structures, each of the plurality of leaf-shaped structures having a suspended arm and a restrained arm both defined by a continuous trench, and each of the plurality of support pillars is uniformly disposed under an edge of each of the plurality of leaf-shaped structures to support the plurality of leaf-shaped structures.
9. The CMOS microphone single chip according to claim 8 , wherein the lateral metal layer comprises a plurality of through-vias.
10. The CMOS microphone single chip according to claim 8 , wherein the plurality of leaf-shaped structures are arranged with symmetry, and the plurality of leaf-shaped structures are arranged annularly.
11. The CMOS microphone single chip according to claim 8 , wherein the plurality of leaf-shaped structures are spaced apart from each other to form at least one central channel which pass through a central portion of the inner-annular-supported movable film, and the at least one central channel and the plurality of leaf-shaped structures each have a plurality of through-vias.
12. The CMOS microphone single chip according to claim 8 , wherein each of the plurality of support pillars is formed by a metal layer coated with an insulating material.
13. The CMOS microphone single chip according to claim 8 , wherein the suspended arm of each of the plurality of leaf-shaped structures is selected from any of the following combinations: a straight shape, an L shape, a V shape, a square shape, a circular shape, an elliptic shape, and a heart-like shape.
14. The CMOS microphone single chip according to claim 8 , wherein the support pillar are annularly arranged with symmetry.