Methods of manufacturing thin film transistor, array substrate and display device
A method of manufacturing a thin film transistor includes forming a semiconductor layer on a base substrate; forming a gate electrode on the semiconductor layer; forming a shield on the gate electrode, wherein a perpendicular projection of the shield onto the base substrate covers a first source portion of the source region and a first drain portion of the drain region; and performing ion implantation to the semiconductor layer by using the shield as a mask, so as to form a first doped region in the first source portion and in the first drain portion, and to form a second doped region in a second source portion of the source region that is not covered by the perpendicular projection of the shield and in a second drain portion of the drain region that is not covered by the perpendicular projection of the shield.
1. A method of manufacturing a thin film transistor, the method comprising:
forming a semiconductor layer on a base substrate;
forming a gate electrode on the semiconductor layer
defining, in the semiconductor layer, a channel region located under the gate electrode, a source region located at a first side of the channel region and a drain region located at a second side of the channel region opposite to the first side;
forming a shield on the gate electrode, a perpendicular projection of the shield onto the base substrate covering a first source portion of the source region and a first drain portion of the drain region; and
performing ion implantation to the semiconductor layer by using the shield as a mask, so as to form a first doped region in the first source portion and in the first drain portion, and to form a second doped region in a second source portion of the source region that is not covered by the perpendicular projection of the shield and in a second drain portion of the drain region that is not covered by the perpendicular projection of the shield.
2. The method of manufacturing a thin film transistor according to claim 1 , wherein the ion implantation comprises at least one perpendicular ion implantation, at least one first inclined ion implantation and at least one second inclined ion implantation, wherein a direction of the first inclined ion implantation is inclined towards the first side of the channel region, and a direction of the second inclined ion implantation is inclined towards the second side of the channel region.
3. The method of manufacturing a thin film transistor according to claim 2 , wherein the perpendicular ion implantation is a heavy-doping ion implantation, the first inclined ion implantation and the second inclined ion implantation are light-doping ion implantation.
4. The method of manufacturing a thin film transistor according to claim 1 , wherein the shield comprises photoresist.
5. The method of manufacturing a thin film transistor according to claim 4 , wherein forming the gate electrode on the semiconductor layer and forming the shield on the gate electrode comprises:
forming, on the semiconductor layer, an electrically conductive layer for forming the gate electrode;
forming a photoresist base layer on the electrically conductive layer;
patterning the photoresist base layer to form the shield; and
overetching the electrically conductive layer by using the shield as a mask, such that the electrically conductive layer is recessed inwardly from an outer edge of the patterned photoresist, so as to form the gate electrode.
6. The method of manufacturing a thin film transistor according to claim 1 , wherein the method further comprises: forming a gate insulation layer on the semiconductor layer before forming the gate electrode.
7. The method of manufacturing a thin film transistor according to claim 6 , wherein the method further comprises: controlling a compactness of the gate insulation layer to adjust a threshold voltage while forming the gate insulation layer.
8. The method of manufacturing a thin film transistor according to claim 7 , wherein controlling the compactness of the gate insulation layer comprises: controlling, while forming the gate insulation layer, at least one of the following parameters: a mixing ratio of process gases, a film formation rate, a reaction temperature, a power of plasma and a film thickness.
9. The method of manufacturing a thin film transistor according to claim 1 , wherein the method further comprises: forming a buffer layer on the base substrate, before forming the semiconductor layer.
10. The method of manufacturing a thin film transistor according to claim 1 , wherein a material of the semiconductor layer comprises polycrystalline silicon.
11. The method of manufacturing a thin film transistor according to claim 1 , wherein each of the first doped region and the second doped region is n-doped.
12. The method of manufacturing a thin film transistor according to claim 10 , wherein doping ions include phosphorus.
13. The method of manufacturing a thin film transistor according to claim 12 , wherein a doping concentration of phosphorus in the first doped region is in a range from about 1×10 13 to about 5×10 13 cm −3 , and a doping concentration of phosphorus in the second doped region is in a range from about 3×10 13 to about 9×10 14 cm −3 .
14. A method of manufacturing an array substrate, wherein the method of manufacturing the array substrate comprises the method of manufacturing the thin film transistor according to claim 1 .
15. A method of manufacturing a display device, wherein the method of manufacturing the display device comprises the method of manufacturing the array substrate according to claim 14 .