IP Library › Granted Patent US 10,566,381
Granted Patent B2
US 10,566,381 · App. 16/154,949 · Granted Feb 18, 2020

Light-emitting diode chip and micro display device

Inventors: YongSeok Kwak (Gyeonggi-do, KR); Kiyong Yang (Seoul, KR); JinSu Moon (Gyeonggi-do, KR); MyungWon Seo (Gyeonggi-do, KR)
Assignee: LG Display Co., Ltd.
H01L27/15G09G3/3225H01L25/18H01L33/007H01L33/44H01L33/508G09G3/32H01L25/0753H01L27/1214
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Quick Facts
Patent No.
US 10,566,381
App. No.
16/154,949
Granted
Feb 18, 2020
Kind
B2
Abstract

A light-emitting diode (LED) chip and a display device having the same are provided. A green LED is regrown on a blue LED to produce blue and green light, and a red phosphor is disposed on the blue or green LED to produce red light. Red light, green light, and blue light are to be produced using a single LED chip. The single LED chip forms three subpixels therein so as to facilitate a transfer process of the LED chip to a display panel. The LED chip is configured based on the blue, green, and blue LEDs so as to facilitate the fabrication and driving of the LED chip.

Claims (34)

1. A light-emitting diode chip, comprising:

a first semiconductor layer;

a first active layer disposed on the first semiconductor layer to emit light corresponding to a first wavelength band;

a second active layer disposed on the first semiconductor layer separately from the first active layer to emit light corresponding to a second wavelength band, the second active layer comprised of two regions;

a second semiconductor layer disposed on the first active layer and the two regions of the second active layer;

a phosphor layer disposed on one region of the two regions of the second active layer;

a first wall disposed between the first active layer and one region of the two regions of the second active layer; and

a second wall disposed between the two regions of the second active layer,

wherein the at least one wall of the first and second walls is disposed to separate at least a portion of the first semiconductor layer.

2. The light-emitting diode chip according to claim 1 , wherein the phosphor layer absorbs a portion of light corresponding to the second wavelength band, and emits light corresponding to a third wavelength band.

3. The light-emitting diode chip according to claim 1 , further comprising a color filter disposed on the phosphor layer to transmit light corresponding to a wavelength band other than the second wavelength band.

4. The light-emitting diode chip according to claim 3 , wherein highest points of the first and second walls are level with or higher than the color filter.

5. The light-emitting diode chip according to claim 1 , further comprising:

a first electrode connected to the first semiconductor layer; and

a plurality of second electrodes connected to the second semiconductor layer.

6. A micro display device, comprising:

a plurality of gate lines;

a plurality of data lines intersecting with the gate lines;

a plurality of pixels defined by the intersection between the gate lines and the data lines; and

a plurality of light-emitting diodes disposed in the pixels, respectively, each of the light-emitting diodes comprising:

a first semiconductor layer;

a first active layer disposed on the first semiconductor layer to emit light corresponding to a first wavelength band;

a second active layer disposed on the first semiconductor layer separately from the first active layer to emit light corresponding to a second wavelength band, the second active layer comprised of two regions;

a second semiconductor layer disposed on the first active layer and the two regions of the second active layer;

a phosphor layer disposed on one region of the two regions of the second active layer;

a first wall disposed between the first active layer and one region of the two regions of the second active layer; and

a second wall disposed between the two regions of the second active layer.

7. The micro display device according to claim 6 , wherein a portion of the first semiconductor layer, located below the first active layer, has a first height, and a portion of the first semiconductor layer, located below the first wall, has a second height, the first height being higher than the second height.

8. The micro display device according to claim 6 , wherein the phosphor layer absorbs a portion of light within the second wavelength band and emits light within a third wavelength band,

the micro display device further comprising a color filter disposed on the phosphor layer to transmit light corresponding to a wavelength band other than the second wavelength band.

9. The micro display device according to claim 6 , wherein each of regions, in which the first active layer and the two regions of the second active layer are disposed, forms a single subpixel.

10. The micro display device according to claim 9 , wherein the light-emitting diode further comprises:

a common electrode connected to the first semiconductor layer; and

two or more individual electrodes disposed in the subpixels, respectively, and connected to the second semiconductor layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 9, 2018
From: KWAK, YONGSEOK; YANG, KIYONG; MOON, JINSU; SEO, MYUNGWON
To: LG DISPLAY CO., LTD.
Reel/Frame 047106/0107 →
Priority Claims (1)
KR 10-2017-0172248 · Dec 14, 2017 · national
Continuity (1)
Related Publication 20190189679A1 · Jun 20, 2019
Cited By (1)
US 12,446,386