Complementary logic circuit and application to thin-film hybrid electronics

1. A row driver implemented using a complementary circuit, comprising:

a logic unit configured to provide a logic function and a digital operation comprising pull-up depletion-mode MOS transistors and pull-down depletion-mode MOS transistors having a single channel conductivity type including negative threshold voltages; and

a level shifting circuit coupled to the logic unit,

wherein the pull-up and pull-down transistors are both n-channel or are both p-channel,

wherein the level shifting circuit comprises diodes implemented by a circuitry arrangement of a heterojunction field-effect transistor (HJFET) device,

wherein the logic unit and the level shifting circuit comprise capacitors connected in series and implemented by a circuitry arrangement of a depletion-mode MOS device, and

wherein the depletion-mode MOS device and the HJFET device are monolithically integrated.

2. The complementary circuit of claim 1 , wherein input signals applied to gates of the pull-up depletion-mode MOS transistors are complementary to input signals applied to gates of the pull-down depletion-mode MOS transistors.

3. The complementary circuit of claim 1 , wherein an input and an output of the level shifting circuit comprise complementary signals.

4. The complementary circuit of claim 1 , wherein the level shifting circuit shifts an output voltage range of the logic unit to approximately a same range as an input voltage range of the logic unit.

5. A system, comprising:

a digital, analog or mixed-signal circuit comprising a heterojunction field-effect transistor (HJFET) device and/or a depletion-mode MOS device; and

a row driver implemented using a complementary circuit coupled to the digital, analog or mixed-signal circuit, the complementary circuit including:

a logic unit configured to provide a logic function and a digital operation comprising pull-up depletion-mode MOS transistors and pull-down depletion-mode MOS transistors having a single channel conductivity type including negative threshold voltages; and

a level shifting circuit coupled to the logic unit,

wherein the pull-up and pull-down transistors are both n-channel or are both p-channel,

wherein the level shifting circuit comprises diodes implemented by a circuitry arrangement of the heterojunction field-effect transistor (HJFET) device,

wherein the logic unit and the level shifting circuit comprise capacitors connected in series and implemented by a circuitry arrangement of the depletion-mode MOS device, and

wherein the depletion-mode MOS devices and the HJFET devices are monolithically integrated.

6. An active matrix display, comprising:

a row driver implemented using a complementary circuit, the complementary circuit including:

a logic unit configured to provide a logic function and a digital operation comprising pull-up depletion-mode MOS transistors and pull-down depletion-mode MOS transistors having a single channel conductivity type including negative threshold voltages; and

a level shifting circuit coupled to the logic unit,

wherein the pull-up and pull-down transistors are both n-channel or are both p-channel,

wherein the level shifting circuit comprises diodes implemented by a circuitry arrangement of the heterojunction field-effect transistor (HJFET) device,

wherein the logic unit and the level shifting circuit comprise capacitors connected in series and implemented by a circuitry arrangement of the depletion-mode MOS device, and

wherein the depletion-mode MOS devices and the HJFET devices are monolithically integrated.

7. The active matrix display of claim 6 , further comprising a heterojunction field-effect transistor (HJFET) backplane coupled to the row driver.

8. A flexible display panel including the complementary circuit of claim 1 as a row driver,

wherein a thin-film transistor backplane of the flexible display panel comprises heterojunction field-effect transistor (HJFET) devices.