Organic light emitting display device having high dielectric constant insulation layer
An organic light emitting display device includes a substrate, an active layer, a gate electrode, a first high dielectric constant (hereinafter “high-k”) insulation structure, source and drain electrodes, and a light emitting structure. The active layer is disposed on the substrate. The gate electrode is disposed on the active layer. The first high-k insulation structure is disposed on the gate electrode and includes a carbon-doped first high-k insulation layer and a first ammonia layer on the carbon-doped first high-k insulation layer. The source and drain electrodes are disposed on the first high-k insulation structure and constitute a semiconductor element together with the active layer and the gate electrode. The light emitting structure is disposed on the source and drain electrodes.
1. An organic light emitting display (OLED) device comprising:
a substrate;
an active layer on the substrate;
a gate electrode on the active layer;
a first-high dielectric constant insulation structure on the gate electrode, the first-high dielectric constant insulation structure including:
a carbon-doped first-high dielectric constant insulation layer; and
a first ammonia layer on the carbon-doped first-high dielectric constant insulation layer;
source and drain electrodes on the first-high dielectric constant insulation structure, the source and drain electrode constituting a semiconductor element together with the active layer and the gate electrode; and
a light emitting structure on the source and drain electrodes.
2. The OLED device of claim 1 , wherein the first-high dielectric constant insulation structure has a multi-layered structure including at least two of the carbon-doped first-high dielectric constant insulation layers and at least two of the first ammonia layers.
3. The OLED device of claim 2 , wherein the carbon-doped first-high dielectric constant insulation layer and the first ammonia layer are alternately and repeatedly disposed.
4. The OLED device of claim 1 , wherein a thickness of the carbon-doped first-high dielectric constant insulation layer is greater than a thickness of the first ammonia layer.
5. The OLED device of claim 1 , wherein a thickness of the first-high dielectric constant insulation structure is equal to or greater than about 100 nanometers, and a thickness of the first ammonia layer is less than or equal to about 20 nanometers.
6. The OLED device of claim 1 , wherein the carbon-doped first-high dielectric constant insulation layer includes a carbon-doped amorphous metal oxide.
7. The OLED device of claim 6 , wherein the carbon-doped first-high dielectric constant insulation layer consists essentially of a carbon-doped amorphous zirconium oxide.
8. The OLED device of claim 1 , further comprising:
a first gate electrode pattern spaced apart from the gate electrode, the first gate electrode pattern being disposed at the same level with the gate electrode; and
a second gate electrode pattern which overlaps the first gate electrode pattern in a plan view, the second gate electrode pattern constituting a first capacitor together with the first gate electrode pattern and the first-high dielectric constant insulation structure.
9. The OLED device of claim 8 , wherein the first-high dielectric constant insulation structure is disposed between the first and second gate electrode patterns.
10. The OLED device of claim 8 , further comprising:
a gate insulation layer disposed between the active layer and the gate electrode; and
an insulating interlayer disposed on the second gate electrode pattern.
11. The OLED device of claim 1 , further comprising:
a first electrode pattern spaced apart from the source and drain electrodes, the first electrode pattern being disposed at the same level with the source and drain electrodes;
a second electrode pattern which overlaps the first electrode pattern in a plan view; and
a second-high dielectric constant insulation structure disposed between the first and second electrode patterns, the second-high dielectric constant insulation structure including:
a carbon-doped second-high dielectric constant insulation layer; and
a second ammonia layer disposed on the carbon-doped second-high dielectric constant insulation layer,
wherein the second electrode pattern constitutes a second capacitor together with the first electrode pattern and the second-high dielectric constant insulation structure.
12. The OLED device of claim 11 , wherein the second-high dielectric constant insulation structure has a multi-layered structure including at least two of the carbon-doped second-high dielectric constant insulation layers and at least two of the second ammonia layers, and
wherein the carbon-doped second-high dielectric constant insulation layer and the second ammonia layer are alternately and repeatedly disposed.
13. The OLED device of claim 11 , wherein a thickness of the carbon-doped second-high dielectric constant insulation layer is greater than a thickness of the second ammonia layer, and the carbon-doped second-high dielectric constant insulation layer consists essentially of a carbon-doped amorphous zirconium oxide.
14. The OLED device of claim 1 , wherein the light emitting structure includes:
a lower electrode disposed on the semiconductor element;
a light emitting layer disposed on the lower electrode; and
an upper electrode disposed on the light emitting layer.
15. An organic light emitting display (OLED) device comprising:
a substrate;
an active layer on the substrate;
a gate electrode on the active layer;
a first-high dielectric constant insulation structure on the gate electrode, the first-high dielectric constant insulation structure including:
a carbon-doped first-high dielectric constant insulation layer covering an entire top surface defining the gate electrode; and
a first insulation layer on the carbon-doped first-high dielectric constant insulation layer, the first insulation layer having a dielectric constant less than a dielectric constant of the carbon-doped first-high dielectric constant insulation layer;
source and drain electrodes on the first-high dielectric constant insulation structure, the source and drain electrode constituting a semiconductor element together with the active layer and the gate electrode; and
a light emitting structure on the source and drain electrodes.
16. The OLED device of claim 15 , wherein a thickness of the carbon-doped first-high dielectric constant insulation layer is greater than a thickness of the first insulation layer.
17. The OLED device of claim 15 , wherein the carbon-doped first-high dielectric constant insulation layer consists essentially of a carbon-doped amorphous zirconium oxide.
18. The OLED device of claim 15 , further comprising:
a first electrode pattern spaced apart from the source and drain electrodes, the first electrode pattern being disposed at the same level with the source and drain electrodes;
a second electrode pattern which overlaps the first electrode pattern in a plan view; and
a second-high dielectric constant insulation structure disposed between the first and second electrode patterns, the second-high dielectric constant insulation structure including:
a carbon-doped second-high dielectric constant insulation layer; and
a second insulation layer disposed on the carbon-doped second-high dielectric constant insulation layer, the second insulation layer having a dielectric constant less than a dielectric constant of carbon-doped second-high dielectric constant insulation layer,
wherein the second electrode pattern constitutes a second capacitor together with the first electrode pattern and the second-high dielectric constant insulation structure.
19. An organic light emitting display (OLED) device comprising:
a substrate;
an active layer on the substrate;
a gate electrode on the active layer;
a first-high dielectric constant insulation structure on the gate electrode, the first-high dielectric constant insulation structure including:
a carbon-doped first-high dielectric constant insulation layer; and
a first insulation layer on the carbon-doped first-high dielectric constant insulation layer, the first insulation layer having a dielectric constant less than a dielectric constant of the carbon-doped first-high dielectric constant insulation layer;
source and drain electrodes on the first-high dielectric constant insulation structure, the source and drain electrode constituting a semiconductor element together with the active layer and the gate electrode;
a light emitting structure on the source and drain electrodes;
a first gate electrode pattern spaced apart from the gate electrode, the first gate electrode pattern being disposed at the same level with the gate electrode; and
a second gate electrode pattern which overlaps the first gate electrode pattern in a plan view, the second gate electrode pattern constituting a first capacitor together with the first gate electrode pattern and the first-high dielectric constant insulation structure,
wherein the first-high dielectric constant insulation structure is disposed between the first and second gate electrode patterns.
20. The OLED device of claim 19 , further comprising:
a gate insulation layer disposed between the active layer and the gate electrode; and
an insulating interlayer disposed on the second gate electrode pattern.