Group 5 metal compound, method for preparing the same, precursor composition for depositing layer containing the same, and method for depositing layer using the same
The present disclosure relates to a novel Group 5 metal compound, a method for preparing the Group 5 metal compound, a precursor composition for depositing a Group 5 metal-containing layer containing the Group 5 metal compound, and a method for depositing a Group 5 metal-containing layer using the precursor composition for depositing a Group 5 metal-containing layer.
1. A Group 5 metal compound, represented by the following Chemical Formula 1:
wherein in the Chemical Formula 1,
M is Ta or Nb,
each of R 1 , R 2 , R 3 , and R 4 is independently hydrogen, or a linear or branched C 1-4 alkyl group,
R 5 is a linear or branched C 3-6 alkyl group,
each of R 6 , R 7 and R 8 is independently a linear or branched C 1-4 alkyl group,
n is an integer of from 1 to 4, and
one carbon atom of the cyclopentadienyl group ring and the nitrogen atom of —NR 8 are bridge-bonded to each other through the alkylene group.
2. The compound of claim 1 ,
wherein each of R 1 , R 2 , R 3 , and R 4 is independently hydrogen, methyl group, or ethyl group.
3. The compound of claim 1 ,
wherein R 5 is n-propyl group, isopropyl group, n-butyl group, tert-butyl group, isobutyl group, sec-butyl group, n-pentyl group, tert-pentyl group, isopentyl group, sec-pentyl group, neopentyl group, or 3-pentyl group.
4. The compound of claim 1 ,
wherein each of R 6 , R 7 , and R 8 is independently methyl group or ethyl group.
5. A precursor composition for depositing a Group 5 metal-containing layer, comprising the Group 5 metal compound according to claim 1 .
6. A method for depositing a Group 5 metal-containing layer, comprising forming a Group 5 metal-containing layer on a substrate using a precursor composition for depositing the Group 5 metal-containing layer of claim 5 .
7. The method of claim 6 ,
wherein the Group 5 metal-containing layer is deposited by chemical vapor deposition or atomic layer deposition.
8. The method of claim 6 ,
wherein the substrate includes unevenness formed on the surface thereof.
9. A method for preparing a Group 5 metal compound represented by the following Chemical Formula 1, which comprises:
reacting a compound (R 5 N═)M(NR 6 R 7 ) 3 represented by the following Chemical Formula 2 with a compound R 1 R 2 R 3 R 4 Cp(CH 2 ) n NHR 8 represented by the following Chemical Formula 3:
wherein in each of the above Formulas 1 to 3,
M is Ta or Nb,
each of R 1 , R 2 , R 3 , and R 4 is independently hydrogen, or a linear or branched C 1-4 alkyl group,
R 5 is a linear or branched C 3-6 alkyl group,
each of R 6 , R 7 and R 8 is independently a linear or branched C 1-4 alkyl group,
n is an integer of from 1 to 4, and
the Cp is a cyclopentadienyl group.
10. The method of claim 9 ,
wherein each of R 1 , R 2 , R 3 , and R 4 is independently hydrogen, methyl group, or ethyl group.
11. The method of claim 9 ,
wherein R 5 is n-propyl group, isopropyl group, n-butyl group, tert-butyl group, iso-butyl group, sec-butyl group, n-pentyl group, tert-pentyl group, iso-pentyl group, sec-pentyl group, neopentyl group, or 3-pentyl group.
12. The method of claim 9 ,
wherein each of R 6 , R 7 , and R 8 is independently methyl group or ethyl group.