IP Library › Granted Patent US 10,580,621
Granted Patent B2
US 10,580,621 · App. 16/322,953 · Granted Mar 3, 2020

Electrode Plate

Inventors: Atsushi Ikari (Shunan, JP); Satoshi Fujii (Tokyo, JP)
Assignee: THINKON NEW TECHNOLOGY JAPAN CORPORATION
H01J37/3255H01J37/32541H01L21/67069H01J2237/0213H01J2237/334
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Quick Facts
Patent No.
US 10,580,621
App. No.
16/322,953
Granted
Mar 3, 2020
Kind
B2
Abstract

An electrode plate includes: a plurality of plate-like electrode members; and a joining part joining the electrode members to each other in a thickness direction. The joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below.

Claims (16)

1. An electrode plate, comprising:

a plurality of plate-like electrode members; and

a joining part joining the electrode members to each other in a thickness direction of each of the electrode members, wherein the joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below, contains any of In, Sn, and Al, and is a eutectic alloy with silicon.

2. The electrode plate according to claim 1 , further comprising a plurality of through holes each penetrating in the thickness direction.

3. The electrode plate according to claim 1 , wherein one of the electrode members disposed on one surface contains a silicon material or a material having a better plasma resistance than the silicon material.

4. An electrode plate, comprising:

a plurality of plate-like electrode members; and

a joining part joining the electrode members to each other in a thickness direction of each of the electrode members, wherein the joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below, and contains boron oxide,

wherein the joining part contains any of In, Sn, and Al, and contains a eutectic alloy with silicon.

5. The electrode plate according to claim 4 , wherein one of the electrode members disposed on one surface contains a silicon material or a material having a better plasma resistance than the silicon material.

6. The electrode plate according to claim 4 , further comprising a plurality of through holes each penetrating in the thickness direction.

7. An electrode plate, comprising:

a plurality of plate-like electrode members; and

a joining part joining the electrode members to each other in a thickness direction of each of the electrode members, wherein the joining part consists essentially of boron oxide.

8. The electrode plate according to claim 7 , wherein one of the electrode members disposed on one surface contains a silicon material or a material having a better plasma resistance than the silicon material.

9. The electrode plate according to claim 7 , further comprising a plurality of through holes each penetrating in the thickness direction.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2019
From: IKARI, ATSUSHI; FUJII, SATOSHI
To: THINKON NEW TECHNOLOGY JAPAN CORPORATION
Reel/Frame 048244/0658 →
Priority Claims (1)
JP 2016-153987 · Aug 4, 2016 · national
Continuity (1)
Related Publication 20190172682A1 · Jun 6, 2019