IP Library › Granted Patent US 10,580,727
Granted Patent B2
US 10,580,727 · App. 16/266,203 · Granted Mar 3, 2020

Through-hole electrode substrate

Inventors: Satoru Kuramochi (Tokyo, JP); Sumio Koiwa (Tokyo, JP); Hidenori Yoshioka (Tokyo, JP)
Assignee: DAI NIPPON PRINTING CO., LTD.
H01L23/49827H01L23/481H01L23/49894H01L25/065H01L25/18H05K1/115H05K3/28H05K3/445H01L23/13H01L23/15H01L24/13H01L24/16H01L24/29H01L24/32H01L24/48H01L24/73H01L2224/0401H01L2224/04042H01L2224/13109H01L2224/13144H01L2224/13147H01L2224/16145H01L2224/16146H01L2224/16165H01L2224/16227H01L2224/2919H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73257H01L2224/81805H01L2224/8385H01L2225/0651H01L2225/06517H01L2225/06572H01L2924/14H01L2924/1432H01L2924/1434H01L2924/1461H01L2924/1579H01L2924/15787H01L2924/15788H01L2924/381H05K2201/0959H05K2201/09154H05K2201/09563H05K2201/09581H05K2201/09854H05K2203/0594
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Quick Facts
Patent No.
US 10,580,727
App. No.
16/266,203
Granted
Mar 3, 2020
Kind
B2
Abstract

A through-hole electrode substrate includes a substrate including a through-hole extending from a first aperture of a first surface to a second aperture of a second surface, an area of the second aperture being larger than that of the first aperture, the through-hole having a minimum aperture part between the first aperture and the second aperture, wherein an area of the minimum aperture part in a planer view is smallest among a plurality of areas of the through-hole in a planer view, a filler arranged within the through-hole, and at least one gas discharge member contacting the filler exposed to one of the first surface and the second surface.

Claims (28)

1. A through-hole electrode substrate comprising:

a substrate including a through-hole extending from a first aperture of a first surface to a second aperture of a second surface, an area of the second aperture being larger than that of the first aperture, the through-hole having a minimum aperture part between the first aperture and the second aperture, wherein an area of the minimum aperture part in a planar view is smallest among a plurality of areas of the through-hole in a planar view;

wherein a shape of a side wall of the through-hole between the first aperture and the second aperture is a consecutive curve shape,

the through-hole has a maximum aperture part between the first aperture and the second aperture, and

the maximum aperture part is larger than the second aperture in a planar view.

2. The through-hole electrode substrate according to claim 1 , wherein at least a part of the side wall of the through-hole in a cross-sectional view includes a curve having an inflection point.

3. The through-hole electrode substrate according to claim 1 , wherein a conductive film is arranged inside of the through-hole.

4. The through-hole electrode substrate according to claim 3 , wherein the conductive film is also arranged on the first surface and on the second surface.

5. The through-hole electrode substrate according to claim 1 , wherein an insulation film and a conductive film are arranged inside of the through-hole in sequence from a side wall side of the through-hole.

6. The through-hole electrode substrate according to claim 5 , wherein the conductive film is also arranged on the first surface and the second surface.

7. The through-hole electrode substrate according to claim 1 , further comprising a filler arranged within the through-hole.

8. The through-hole electrode substrate according to claim 7 , wherein the filler is a conductive material.

9. The through-hole electrode substrate according to claim 7 , wherein the filler is an insulation material.

10. The through-hole electrode substrate according to claim 1 , wherein the substrate has insulation properties.

11. The through-hole electrode substrate according to claim 1 , wherein the substrate has conductive properties.

12. A semiconductor device comprising the through-hole electrode substrate according to claim 1 , an LSI substrate and a semiconductor chip.

13. A through-hole electrode substrate comprising:

a substrate including a through-hole extending from a first aperture of a first surface to a second aperture of a second surface, and including a first part and a second part, the second part having a larger area in a planar view than the first part and the first aperture;

wherein a shape of a side wall of the through-hole between the first aperture and the second aperture is a consecutive curve shape,

the through-hole has a maximum aperture part between the first aperture and the second aperture, and

the maximum aperture part is larger than the second aperture in a planar view.

14. The through-hole electrode substrate according to claim 13 , wherein at least a part of the side wall of the through-hole in a cross-sectional view includes a curve having an inflection point.

15. The through-hole electrode substrate according to claim 13 , wherein a conductive film is arranged inside of the through-hole.

16. The through-hole electrode substrate according to claim 15 , wherein the conductive film is also arranged on the first surface and on the second surface.

17. The through-hole electrode substrate according to claim 13 , wherein an insulation film and a conductive film are arranged inside of the through-hole in sequence from a side wall side of the through-hole.

18. The through-hole electrode substrate according to claim 17 , wherein the conductive film is also arranged on the first surface and the second surface.

19. The through-hole electrode substrate according to claim 13 , further comprising a filler arranged within the through-hole.

20. The through-hole electrode substrate according to claim 19 , wherein the filler is a conductive material.

Priority Claims (1)
JP 2013-241392 · Nov 21, 2013 · national
Continuity (3)
Continuation 15159323 · May 19, 2016
Continuation PCTJP2014080649 · Nov 19, 2014
Related Publication 20190172780A1 · Jun 6, 2019