Solid-state imaging device having light shielding films, method of manufacturing the same, and electronic apparatus
The present technology relates to a solid-state imaging device that can further reduce the influence the film stress generated in an upper electrode has on a photoelectric conversion film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. A solid-state imaging device includes: a photoelectric conversion film formed on the upper side of a semiconductor substrate; and two or more light shielding films formed at positions higher than the photoelectric conversion film with respect to the semiconductor substrate. The present technology can be applied to solid-state imaging devices, electronic apparatuses, and the like, for example.
1. A solid-state imaging device comprising:
a photoelectric conversion film formed on an upper side of a semiconductor substrate; and
at least two light shielding films formed at positions higher than the photoelectric conversion film with respect to the semiconductor substrate,
wherein one of the at least two light shielding films covers an end face on an effective pixel region side of another one of the at least two light shielding films.
2. The solid-state imaging device according to claim 1 ,
wherein the at least two light shielding films have an opening in an entire region of the effective pixel region.
3. The solid-state imaging device according to claim 1 , wherein the at least two light shielding films have openings for respective pixels in the effective pixel region, and include an inter-pixel light shielding film.
4. The solid-state imaging device according to claim 1 , further comprising a sealing film between respective light shielding films of the at least two light shielding films.
5. The solid-state imaging device according to claim 1 , wherein the at least two light shielding films are stacked, without another layer being interposed between the at least two light shielding films.
6. The solid-state imaging device according to claim 1 , wherein the at least two light shielding films are formed with two light shielding films, the two light shielding films being a first light shielding film on a side of the semiconductor substrate and a second light shielding film formed on a light incident side of the first light shielding film.
7. The solid-state imaging device according to claim 6 , wherein a thickness of the first light shielding film is thinner than a thickness of the second light shielding film.
8. The solid-state imaging device according to claim 1 , wherein the at least two light shielding films are formed with two light shielding films.
9. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion film is an organic photoelectric conversion film containing an organic material.
10. The solid-state imaging device according to claim 1 , wherein each of the at least two light shielding films has a same thickness.
11. The solid-state imaging device according to claim 1 , wherein each of the at least two light shielding films has a different thickness.
12. The solid-state imaging device according to claim 1 , wherein each of the at least two light shielding films is formed using a single material.
13. The solid-state imaging device according to claim 1 , wherein each of the at least two light shielding films is formed using at least two different materials.
14. A method of manufacturing a solid-state imaging device, comprising:
forming a photoelectric conversion film on an upper side of a semiconductor substrate; and
forming at least two light shielding films at positions higher than the photoelectric conversion film with respect to the semiconductor substrate,
wherein one of the at least two light shielding films covers an end face on an effective pixel region side of another one of the at least two light shielding films.
15. The method according to claim 14 , wherein the at least two light shielding films have an opening in an entire region of the effective pixel region.
16. The method according to claim 14 , wherein the at least two light shielding films have openings for respective pixels in the effective pixel region, and include an inter-pixel light shielding film.
17. The method according to claim 14 , further comprising forming a sealing film between respective light shielding films of the at least two light shielding films.
18. An electronic apparatus comprising
a solid-state imaging device including:
a photoelectric conversion film formed on an upper side of a semiconductor substrate; and
at least two light shielding films formed at positions higher than the photoelectric conversion film with respect to the semiconductor substrate,
wherein one of the at least two light shielding films covers an end face on an effective pixel re ion side of another one of the at least two light shielding films.
19. The electronic apparatus according to claim 18 , wherein the at least two light shielding films have an opening in an entire region of the effective pixel region.
20. The electronic apparatus according to claim 18 , wherein the at least two light shielding films have openings for respective pixels in the effective pixel region, and include an inter-pixel light shielding film.