Highly reliable light emitting diode

1. A light emitting diode device comprising:

an array of light emitting cells including a plurality of light emitting cells arranged in series in a flow direction of an electrical current flowing through the plurality of light emitting cells, the plurality of light emitting cells including two adjacent light emitting cells spaced apart from each other by a cell isolation region and each light emitting cell including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;

an ohmic reflection layer disposed on the second conductivity type semiconductor layer of each of the light emitting cells to form ohmic contact with the second conductivity type semiconductor layer;

a lower insulation layer covering the light emitting cells and the ohmic reflection layer, the lower insulation layer having first openings exposing the first conductivity type semiconductor layer of each of the light emitting cells and second openings exposing the ohmic reflection layer of each of the light emitting cells;

a connector disposed on the lower insulation layer and electrically connecting the two adjacent light emitting cells to each other, the connector disposed over less than all of the cell isolation region;

a first pad metal layer electrically connected to the first conductivity type semiconductor layer of one of the light emitting cells disposed last in the flow direction through the first openings of the lower insulation layer;

a second pad metal layer electrically connected to the ohmic reflection layer of another of the light emitting cells disposed first in the flow direction through the second openings of the lower insulation layer;

an upper insulation layer covering the connector and the first and second pad metal layers, the upper insulation layer having a third opening and a fourth opening exposing upper surfaces of the first and second pad metal layers, respectively; and

a first bump pad and a second bump pad that are respectively connected to the upper surfaces of the first pad metal layer and the second pad metal layer exposed through the third and fourth openings,

wherein the connector is spaced apart from the first and second bump pads along a direction and does not overlap the first and second bump pads along the direction.

2. The light emitting diode device of claim 1 , wherein each of the light emitting cells at least partially overlaps at least one of the first and second bump pads.

3. The light emitting diode device of claim 2 , wherein each of the first and second bump pads are disposed over at least two light emitting cells.

4. The light emitting diode device of claim 1 , wherein the first pad metal layer is disposed within an upper region of the last light emitting cell and the second pad metal layer is disposed within an upper region of the first light emitting cell.

5. The light emitting diode device of claim 4 , wherein the first and second pad metal layers are spaced apart from the connector.

6. The light emitting diode device of claim 1 , wherein the connector and the first and second pad metal layers include the same material and placed at the same level.

7. The light emitting diode device of claim 1 , wherein the second opening of the lower insulation layer is spaced apart from the opening of the upper insulation layer exposing the second pad metal layer in the direction.

8. The light emitting diode device of claim 1 , wherein at least one light emitting cell comprises a bay or a via-hole formed through the second conductivity type semiconductor layer and the active layer to expose the first conductivity type semiconductor layer, and

the connector is electrically connected to the first conductivity type semiconductor layer of the light emitting cell through the exposure region.

9. The light emitting diode device of claim 1 , wherein the upper insulation layer covers a region between an outermost edge of the substrate and edges of the light emitting cells and a distance between an edge of the upper insulation layer and the connector is 15 μm or more.

10. The light emitting diode device of claim 1 , wherein the connector directly contacts the first conductivity type semiconductor layer exposed through the first openings and the ohmic reflection layer exposed through the second openings.

11. The light emitting diode device of claim 1 , further comprising:

at least one floating metal layer disposed on the lower insulation layer and covered by the upper insulation layer,

wherein each floating metal layer is insulated from the first pad metal layer, the second pad metal layer and the connector.

12. The light emitting diode device of claim 11 , wherein the at least one floating metal includes a same material as the connector and the first and second pad metal layers.

13. The light emitting diode device of claim 12 , wherein the at least one floating metal layer comprises a floating metal layer partially covering a region between two adjacent light emitting cells.

14. The light emitting diode device of claim 11 , wherein the at least one floating metal layer comprises a plurality of floating metal layers and at least one of the floating metal layers has a same shape as the second pad metal layer.

15. The light emitting diode device of claim 1 , further comprising: a substrate on which the plurality of light emitting cells is disposed.

16. A light emitting diode device comprising:

an array of light emitting cells including a plurality of light emitting cells arranged in series in a flow direction of an electrical current flowing through the plurality of light emitting cells, the plurality of light emitting cells including two adjacent light emitting cells spaced apart from each other by a cell isolation region and each light emitting cell including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;

a lower insulation layer covering the light emitting cells and having openings on each of the light emitting cells;

a connector disposed on the lower insulation layer and electrically connecting the two adjacent light emitting cells to each other, the connector disposed over less than all of the cell isolation region;

a first pad metal layer electrically connected to the first conductivity type semiconductor layer of one of the light emitting cells disposed last in the flow direction through some of the openings of the lower insulation layer;

a second pad metal layer electrically connected to the second conductivity type semiconductor layer of another of the light emitting cells disposed first in the flow direction through the others of the openings of the lower insulation layer;

an upper insulation layer covering the connector and the first and second pad metal layers, the upper insulation layer having openings exposing upper surfaces of the first and second pad metal layers, respectively; and

a first bump pad and a second bump pad that are respectively connected to the upper surfaces of the first pad metal layer and the second pad metal layer exposed through the openings of the upper insulation layer,

wherein the connector is spaced apart from the first and second bump pads in a direction and does not overlap the first and second bump pads in the direction.