Memory device
The present invention relates to a memory device including a substrate and a lower electrode, buffer layer, seed layer, Magnetic Tunnel Junction (MTJ), capping layer, synthetic antiferromagnetic layer, and upper electrode formed on the substrate.
1. A memory device, comprising a substrate and a lower electrode, buffer layer, seed layer, synthetic antiferromagnetic layer, capping layer, Magnetic Tunnel Junction (MTJ), and upper electrode formed on the substrate,
wherein the synthetic antiferromagnetic layer comprises a first magnetic layer having a single layer structure; a non-magnetic layer; and a multilayered second magnetic layer.
2. The memory device according to claim 1 , wherein a free layer of the MTJ comprises a first magnetization layer having horizontal magnetization; a separation layer having no magnetization; and a second magnetization layer having perpendicular magnetization.
3. The memory device according to claim 1 , wherein first and second free layers of the MTJ are formed of a material comprising CoFeB, and the first free layer is formed more thickly than the second free layer.
4. The memory device according to claim 1 , wherein the first magnetic layer is formed in a single Co/Pt layer structure, and the second magnetic layer is formed in a multilayered structure comprising Co/Pt laminated at least twice.
5. A memory device, comprising a substrate and a lower electrode, buffer layer, seed layer, synthetic antiferromagnetic layer, capping layer, Magnetic Tunnel Junction (MTJ), and upper electrode formed on the substrate, wherein the capping layer is formed of at least two layers.
6. The memory device according to claim 5 , wherein a first capping layer, which is adjacent to the MTJ, of the capping layer is formed of a material having a bcc structure, and a second capping layer adjacent to the synthetic antiferromagnetic layer is formed of a material preventing the synthetic antiferromagnetic layer material from being diffused downwardly.
7. A memory device, comprising a substrate and a lower electrode, buffer layer, seed layer, synthetic antiferromagnetic layer, capping layer, Magnetic Tunnel Junction (MTJ), and upper electrode formed on the substrate, wherein the synthetic antiferromagnetic layer is formed in a structure wherein a first magnetic layer, a non-magnetic layer, and a second magnetic layer are laminated, and the first and second magnetic layers are formed of a material comprising Pt.
8. The memory device according to claim 7 , wherein the first magnetic layer is formed in a multilayered structure comprising Co/Pt laminated at least twice, and the second magnetic layer is formed in a single Co/Pt layer structure.
9. A memory device, comprising a substrate and a lower electrode, buffer layer, seed layer, synthetic antiferromagnetic layer, capping layer, Magnetic Tunnel Junction (MTJ), and upper electrode formed on the substrate, wherein a free layer of the MTJ comprises a first magnetization layer having perpendicular magnetization; a separation layer having no magnetization; and a second magnetization layer having perpendicular magnetization, wherein the first magnetization layer is formed adjacent to a pinned layer of the MJT.
10. The memory device according to claim 9 , wherein first and second free layers of the free layer are formed of a material comprising CoFeB, and the first free layer is formed more thinly than the second free layer.
11. A memory device, comprising a substrate and a lower electrode, seed layer, and MTJ laminated on the substrate,
wherein the seed layer is formed in at least a dual structure, and at least one layer of the dual structure has a bcc structure.
12. The memory device according to claim 11 , wherein the lower electrode is formed in a structure wherein a first lower electrode comprising tungsten and a second lower electrode comprising TiN are laminated.
13. The memory device according to claim 11 , wherein the seed layer is formed in a structure wherein a first seed layer self-crystallizable to bcc and a second seed layer having a bcc structure are laminated.
14. The memory device according to claim 13 , wherein the first seed layer is formed thinly than a tunnel barrier of the MTJ.
15. The memory device according to claim 14 , wherein the first seed layer is formed to a thickness of 1 nm to 1.5 nm, and the second seed layer is formed to a thickness of 1 nm to 1.4 nm.
16. A memory device, comprising an MTJ that comprises a free layer, a tunnel barrier, and a pinned layer,
wherein the free layer is formed in at least a two-layer structure having different magnetization directions.
17. The memory device according to claim 16 , wherein the free layer is adjacent to the pinned layer and has perpendicular magnetization.
18. The memory device according to claim 16 , wherein the free layer comprises a first magnetization layer having horizontal magnetization; a separation layer having no magnetization; and a second magnetization layer having perpendicular magnetization.
19. The memory device according to claim 18 , wherein a first free layer of the free layer is formed to a thickness of 1 nm to 4 nm, and a second free layer of the free layer is formed to a thickness of 0.8 nm to 1.2 nm.