Array substrate and method for fabricating the same, display apparatus
The present disclosure provides an array substrate and a method for fabricating the same, and a display apparatus. The array substrate includes: a base substrate, and a shielding pattern and a plurality of detection units on the base substrate. At least one of the plurality of detection units includes a switch transistor and a photosensitive device coupled to the switch transistor. The shielding pattern covers the switch transistor on a side of the switch transistor distal to the base substrate. The photosensitive device is located on a side of the shielding pattern proximal to the base substrate. The shielding pattern is configured to shield irradiation light and allow detection light to be transmitted to the photosensitive device.
1. An array substrate, comprising: a base substrate, and a shielding pattern and a plurality of detection units on the base substrate, wherein at least one of the plurality of detection units comprises a switch transistor and a photosensitive device coupled to the switch transistor, the shielding pattern covers the switch transistor on a side of the switch transistor distal to the base substrate, the photosensitive device is on a side of the shielding pattern proximal to the base substrate, and the shielding pattern is configured to shield irradiation light and allow detection light to be transmitted to the photosensitive device,
wherein the switch transistor is a thin film transistor having a drain electrode coupled to the photosensitive device, the photosensitive device comprises a first area and a second area, the drain electrode covers the first area of the photosensitive device on a side of the photosensitive device proximal to the base substrate, and the second area of the photosensitive device is configured to allow the detection light to pass therethrough.
2. The array substrate of claim 1 , wherein the shielding pattern is configured to allow invisible light to be transmitted to the photosensitive device.
3. The array substrate of claim 2 , wherein the shielding pattern is configured to allow infrared light to be transmitted to the photosensitive device.
4. The array substrate of claim 1 , further comprising a first electrode layer provided on a side of the switch transistor and the photosensitive device distal to the base substrate and coupled to photosensitive device.
5. The array substrate of claim 1 , wherein the photosensitive device is a photosensitive diode.
6. The array substrate of claim 5 , wherein a connection pattern is provided on a side of the photosensitive device distal to the base substrate, and the connection pattern is located on a side of the shielding pattern proximal to the base substrate and coupled to the first electrode layer.
7. The array substrate of claim 6 , wherein the photosensitive diode has a first electrode coupled to the drain electrode of the thin film transistor, and a second electrode coupled to the connection pattern.
8. The array substrate of claim 7 , wherein the first electrode layer is a common electrode layer coupled to a common electrode line.
9. The array substrate of claim 1 , wherein the shielding pattern is a black matrix pattern.
10. The array substrate of claim 1 , wherein a plurality of gate lines and a plurality of signal output lines are formed on the base substrate and define the plurality of detection units, and each of the plurality of detection units has a same structure.
11. The array substrate of claim 1 , wherein the irradiation light is visible light.
12. A display apparatus, comprising a backlight source and the array substrate of claim 1 , wherein the backlight source is on a base substrate side of the array substrate and configured to emit the irradiation light and the detection light.
13. The display apparatus of claim 12 , wherein the backlight source comprises irradiation light sources and detection light sources provided alternately, the irradiation light sources are configured to emit the irradiation light, and the detection light sources are configured to emit the detection light.
14. A display apparatus, comprising a backlight source, and a counter substrate and an array substrate opposite to each other, wherein the backlight source is on a side of the array substrate distal to the counter substrate and configured to emit irradiation light and detection light; the array substrate comprises a first base substrate and a plurality of detection units on the first base substrate, each of the plurality of detection units comprises a switch transistor and a photosensitive device coupled to the switch transistor; the counter substrate comprises a second base substrate and a shielding pattern provided on a side of the second base substrate proximal to the display substrate, and the shielding pattern completely covers the switch transistor and is configured to shield the irradiation light and allow the detection light to be transmitted to the photosensitive device.
15. The display apparatus of claim 14 , wherein the backlight source comprises irradiation light sources and detection light sources provided alternately, the irradiation light sources are configured to emit the irradiation light, and the detection light sources are configured to emit the detection light.
16. The display apparatus of claim 15 , wherein the detection light is invisible light.
17. The display apparatus of claim 14 , wherein the switch transistor is a thin film transistor having a drain electrode covering the photosensitive device on a side of the photosensitive device proximal to the first base substrate to be coupled to the photosensitive device.
18. A method for fabricating an array substrate, the array substrate being the array substrate of claim 1 , the method comprising: forming the shielding pattern and the plurality of detection units on the base substrate, wherein each of the plurality of detection units is formed to comprise the switch transistor and the photosensitive device coupled to the switch transistor, the shielding pattern is formed to cover the switch transistor on the side of the switch transistor distal to the base substrate, the photosensitive device is formed on the side of the shielding pattern proximal to the base substrate, and the shielding pattern is formed to shield irradiation light and allow detection light to be transmitted to the photosensitive device.