High speed thin film two terminal resistive memory
View Patent ↗A high speed thin film two terminal resistive memory article of manufacture comprises a chargeable and dischargeable variable resistance thin film battery having a plurality of layers operatively associated with one another, the plurality of layers comprising in sequence, a cathode-side conductive layer, a cathode layer comprised of a material that can take up cations and discharge cations in a charging and discharging process, an electrolyte layer comprising the cations, a barrier layer, an anode layer, and an optional anode-side conductive layer, the barrier layer comprised of a material that substantially prevents the cations from combining with the anode layer.
1. A resistive memory battery article of manufacture comprising a chargeable and dischargeable high speed, two terminal, variable resistance thin film battery that comprises a plurality of layers operatively associated with one another, said plurality of layers comprising in sequence, a cathode-side conductive layer, a cathode layer comprised of a material that can take up cations and discharge cations in a charging and discharging process, an electrolyte layer comprising said cations, a barrier layer, an anode layer, and an optional anode-side conductive layer, said barrier layer comprised of a material that substantially prevents said cations from combining with said anode layer, wherein said barrier layer is a material comprised of a Group IIIA element, a Group IVB element, or a Group VB element or combinations thereof.
2. The article of manufacture of claim 1 wherein said cathode-side conductive layer comprises an electrode layer and said article of manufacture includes said anode-side conductive layer which comprises a semi conductor layer.
3. The article of manufacture of claim 1 wherein said cation is comprised of an alkali metal cation.
4. The article of manufacture of claim 1 wherein said cation is comprised of a lithium cation.
5. The article of manufacture of claim 1 wherein said cathode comprises LCO.
6. The article of manufacture of claim 2 wherein said cathode comprises LCO.
7. The article of manufacture of claim 1 wherein said barrier layer is a material comprised of a Group IIIA element.
8. The article of manufacture of claim 2 wherein said barrier layer is a material comprised of a Group IIIA element.
9. A resistive memory battery article of manufacture comprising a chargeable and dischargeable high speed, two terminal, variable resistance thin film battery that comprises a plurality of layers operatively associated with one another, said plurality of layers comprising in sequence, a cathode-side conductive metal electrode layer, a cathode layer that can take up and discharge alkali metal cations in a charging and discharging process, an electrolyte layer comprising alkali metal cations, a barrier layer comprising a Group IIIA—oxide or combinations of Group IIIA—oxides, an anode layer comprising a conductive metal electrode, and a semiconductor layer, said barrier layer selected to substantially prevent said cations from combining with said anode layer, wherein said barrier layer is a material comprised of a Group IIIA element, a Group IVB element, or a Group VB element or combinations thereof.
10. The article of manufacture of claim 9 wherein said cathode-side conductive metal electrode layer comprises Ni and alloys and mixtures of metals with Ni, said anode layer comprises a conductive Ni metal electrode and alloys and mixtures of metals with Ni, said alkali metal is comprised of Li, and said Group IIIA—oxides comprise an oxide of Al.
11. The article of manufacture of claim 10 substantially free of hysteresis in a charge discharge cycle.
12. The article of manufacture of claim 10 substantially free of hysteresis in a charge discharge cycle with a charge profile substantially as shown in FIG. 2A and a discharge profile substantially as shown in FIG. 26 .
13. The article of manufacture of claim 10 having a measured pulse response substantially as shown in FIG. 3 .
14. The article of manufacture of claim 10 having a write-erase synapse structure substantially as shown in FIG. 4 .
15. An article of manufacture comprising a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory of claim 1 operatively associated with a computing circuit.
16. The article of manufacture of claim 15 where said computing circuit comprises a variable resistance computing circuit.
17. The article of manufacture of claim 15 where said computing circuit comprises a neuromorphic computing circuit.
18. The article of manufacture of claim 15 where said computing circuit comprises a memristor computing circuit.
19. An article of manufacture comprising a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory of claim 9 operatively associated with a computing circuit.
20. The article of manufacture of claim 19 where said computing circuit comprises a variable resistance computing circuit.
21. The article of manufacture of claim 19 where said computing circuit comprises a neuromorphic computing circuit.
22. The article of manufacture of claim 19 where said computing circuit comprises a memristor computing circuit.
23. The article of manufacture of claim 9 wherein said cation is comprised of an alkali metal cation.
24. The article of manufacture of claim 9 wherein said barrier layer is a material comprised of a Group IIIA element.