IP Library › Granted Patent US 10,593,356
Granted Patent B2
US 10,593,356 · App. 15/269,066 · Granted Mar 17, 2020

Manufacturing method for reader side shield

Inventors: Xin Cao (Londonderry, GB); Frances Paula McElhinney (Derry, GB); Jiansheng Xu (Derry, GB); Marcus Winston Ormston (Derry, GB)
Assignee: SEAGATE TECHNOLOGY LLC
G11B5/3912G11B5/11G11B5/112G11B5/1272G11B5/1871G11B5/3116G11B5/3163G11B5/39G11B5/3903G11B5/3906G11B5/3929G11B5/3932G11B5/6082H01L25/50Y10T29/49032Y10T29/49041Y10T29/49043Y10T29/49046Y10T29/49048
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Quick Facts
Patent No.
US 10,593,356
App. No.
15/269,066
Granted
Mar 17, 2020
Kind
B2
Abstract

A magnetoresistive (MR) sensor shield shields against both down track and cross-track interference and is formed in a single deposition step. A “tail” portion of the shield is eliminated by including a non-magnetic material adjacent to opposite sides of a middle portion of the sensor stack.

Claims (10)

1. A method comprising:

removing non-magnetic material from a front portion of a magnetoresistive (MR) sensor including an air-bearing surface (ABS) while leaving the non-magnetic material in-tact in a middle region of the MR sensor, the middle region being separated from the ABS by the front portion of the MR sensor;

forming a monolithic shield of the MR sensor in a single deposition operation, the monolithic shield being deposited on the front portion of the MR sensor from which the non-magnetic material was removed and including a top shield element, a first side shield element on a first side of a synthetic anti-ferromagnet (SAF) structure and a second shield element on an opposite side of the SAF structure.

2. The method of claim 1 further comprising:

depositing the non-magnetic material adjacent opposite sides of the SAF structure in a cross-track direction.

3. The method of claim 1 , wherein the monolithic shield element isolates the non-magnetic material in the middle region of the MR sensor from the ABS such that the monolithic shield is between the ABS and the non-magnetic material.

4. The method of claim 2 , wherein the monolithic shield is axially aligned with the non-magnetic material in a down-track direction and a cross-track direction.

5. The method of claim 2 , wherein the non-magnetic material is a material that can be selectively etched using at least one of fluorocarbon (CF 4 ), an oxygen-based plasma, and a wet etch solution.

6. The method of claim 2 , wherein the SAF structure is included within a sensor stack and the non-magnetic material is axially aligned with the SAF structure and not axially aligned with a free layer of the sensor stack.

7. The method of claim 1 , wherein the non-magnetic material is at least one of silicon dioxide (SiO 2 ), amorphous carbon, and copper.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2016
From: CAO, XIN; MCELHINNEY, FRANCES PAULA; XU, JIANSHENG; ORMSTON, MARCUS WINSTON
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 039780/0655 →
Continuity (3)
Division 14514050 · Oct 14, 2014
Provisional Application 61890747 · Oct 14, 2013
Related Publication 20170004852A1 · Jan 5, 2017