Film deposition method

1. A film deposition method, comprising:

adsorbing an aminosilane gas on a surface of a substrate including a recess pattern;

depositing a silicon oxide film on the surface of the substrate including the recess pattern by oxidizing the aminosilane gas adsorbed on the surface of the substrate using an oxidation gas; and

modifying the silicon oxide film by supplying a mixed gas containing oxygen, argon and nitrogen to the silicon oxide film while activating the mixed gas by plasma generated using an antenna, oxygen plasma being generated under the antenna induced by nitrogen plasma generated under the antenna, the nitrogen plasma having excitation energy smaller than excitation energy of the oxygen plasma.

2. The film deposition method according to claim 1 , wherein a mix ratio of nitrogen to argon in the mixed gas is less than 1%.

3. The film deposition method according to claim 1 , wherein the steps of adsorbing the aminosilane gas, depositing the silicon oxide film and modifying the silicon oxide film are repeated periodically.

4. The film deposition method according to claim 3 , further comprising:

supplying a first purge gas to the surface of the substrate between the steps of adsorbing the aminosilane gas on the surface of the substrate and depositing the silicon oxide film on the surface of the substrate; and

supplying a second purge gas to the surface of the substrate between the steps of modifying the silicon oxide film and adsorbing the aminosilane gas on the surface of the substrate.

5. The film deposition method according to claim 4 , wherein the steps of adsorbing the aminosilane gas on the surface of the substrate, supplying the first purge gas to the surface of the substrate, depositing the silicon oxide film on the surface of the substrate, modifying the silicon oxide film, and supplying the second purge gas to the surface of the substrate, are repeated until filling up the recess pattern with the silicon oxide film.

6. The film deposition method according to claim 4 ,

wherein the substrate is arranged on a turntable along a circumferential direction of the turntable provided in a process chamber,

wherein the process chamber includes an aminosilane adsorption region, a first purge region, an oxidation region, a modification region, a second purge region above the turntable and along a rotational direction of the turntable, and

wherein the steps of adsorbing the aminosilane gas on the surface of the substrate, supplying the first purge gas to the surface of the substrate, depositing the silicon oxide film on the surface of the substrate, modifying the silicon oxide film, and supplying the second purge gas to the surface of the substrate, are periodically repeated by rotating the turntable.

7. The film deposition method according to claim 6 , wherein the nitrogen-containing gas includes N 2 , N 2 O, NO and/or NO 2 .

8. The film deposition method according to claim 1 , wherein nitrogen is supplied to the mixed gas by adding a nitrogen-containing gas to the mixed gas.

9. The film deposition method according to claim 1 , wherein the mixed gas does not contain hydrogen.

10. The film deposition method according to claim 1 , wherein the aminosilane gas is an organic-aminosilane gas.

11. The film deposition method according to claim 1 , wherein the oxidation gas contains ozone and/or oxygen.

12. The film deposition method according to claim 1 , wherein the plasma is inductively coupled plasma generated using an antenna.

13. The film deposition method according to claim 1 , wherein an undercoat film is preliminarily formed on the surface of the substrate.

14. The film deposition method according to claim 1 , wherein the mixed gas consists of oxygen, argon and nitrogen.