High electron mobility transistor (HEMT) device
A high electron mobility transistor (HEMT) device with epitaxial layers that include a gallium nitride (GaN) layer and an aluminum (Al) based layer having an interface with the GaN layer is disclosed. The Al based layer includes Al and an alloying element that is selected from Group IIIB transition metals of the periodic table of elements. The epitaxial layers are disposed over the substrate. A gate contact, a drain contact, and a source contact are disposed on a surface of the epitaxial layers such that the source contact and the drain contact are spaced apart from the gate contact and each other. The alloying element relieves lattice stress between the GaN layer and the Al based layer while maintaining a high sheet charge density within the HEMT device.
1. A high electron mobility transistor (HEMT) device comprising:
a substrate;
epitaxial layers over the substrate and comprising;
a gallium nitride (GaN) layer; and
an aluminum (Al) based layer comprising Sc 0.05 Al 0.45 Ga 0.50 N and having an interface with the GaN layer, wherein the interface between the Al based layer and the GaN layer produces a sheet charge density of at least 2.0×10 13 cm −2 with the Al based layer having a thickness of no more than 20 nm; and
a gate contact disposed on a surface of the epitaxial layers;
a source contact disposed on the surface of the epitaxial layers; and
a drain contact disposed on the surface of the epitaxial layers, wherein the source contact and the drain contact are spaced apart from the gate contact and each other.
2. The HEMT device of claim 1 wherein the HEMT device has a double heterostructure to improve carrier confinement.
3. The HEMT device of claim 2 wherein the HEMT device includes a buffer layer comprising GaN that is sandwiched between a barrier layer comprising Al, Ga, and N and the Al based layer.
4. The HEMT device of claim 3 wherein the barrier layer is Al 0.30 Ga 0.70 N.