Display device and method of manufacturing the same
A display device includes a first insulation layer on a first gate electrode, an active pattern on the first insulation layer and including an NMOS area and a PMOS area, the PMOS area overlapping the first gate electrode, a second insulation layer on the active pattern. The active pattern includes an NMOS area and a PMOS area, with the PMOS area overlapping the first gate electrode. In addition, a second gate electrode is on the second insulation layer and overlaps the NMOS area. An active-protecting pattern is in the same layer as the second gate electrode and passes through the second insulation layer to contact the PMOS area. A third insulation layer is on the active-protecting pattern and the second gate electrode. A data metal electrode passes through the third insulation layer and contacts the active-protecting pattern.
1. A method for manufacturing a display device, the method comprising:
forming a lower gate metal pattern including a first gate electrode;
forming a first insulation layer on the lower gate metal pattern;
forming a semiconductor pattern on the first insulation layer, the semiconductor pattern including a first active area and a second active area spaced apart from the first active area, the first active area overlapping the first gate electrode;
forming a second insulation layer on the semiconductor pattern;
forming a PMOS area by doping the first active area;
forming an NMOS area by doping the second active area;
forming an upper gate metal pattern on the second insulation layer, the upper gate metal pattern including a second gate electrode that overlaps the NMOS area and an active-protecting pattern that contacts the PMOS area so that a portion of the active-protecting pattern is disposed on the upper surface of the second insulation layer, the active-protecting pattern being formed of a same material as the second gate electrode;
forming a third insulation layer on the second gate electrode and the active-protecting pattern; and
forming a data metal pattern including a data metal electrode passing through the third insulation layer to contact the active-protecting pattern.
2. The method as claimed in claim 1 , wherein the active-protecting pattern includes a material having a work function higher than the data metal electrode.
3. The method as claimed in claim 2 , wherein:
the active-protecting pattern includes at least one of silver, nickel, tungsten, copper, chromium, and molybdenum, and
the data metal electrode includes at least one of magnesium, tantalum, titanium, and aluminum.
4. The method as claimed in claim 1 , wherein forming the PMOS area includes:
forming a first photoresist layer on the second insulation layer;
etching the second insulation layer by using the first photoresist layer as a mask to partially expose the first active area; and
providing p-typed impurities to an exposed portion of the first active area.
5. The method as claimed in claim 4 , wherein forming the NMOS area includes:
forming an upper gate metal layer on the second insulation layer;
forming a second photoresist layer on the upper gate metal layer;
etching the upper gate metal layer by using the second photoresist layer as a mask to partially expose the second insulation layer; and
providing n-typed impurities to a portion of the second active area through the second insulation layer.
6. The method as claimed in claim 5 , wherein forming the upper gate metal pattern includes:
forming a third photoresist layer on a remaining upper gate metal layer; and
etching the remaining upper gate metal layer using the third photoresist layer as a mask to form a first active-protecting pattern and a second active-protecting pattern spaced apart from the first active-protecting pattern.
7. A display device, comprising:
a first gate electrode;
a first insulation layer on the first gate electrode;
an active pattern on the first insulation layer and including an NMOS area and a PMOS area, the PMOS area overlapping the first gate electrode;
a second insulation layer on the active pattern;
a second gate electrode on an upper surface of the second insulation layer and overlapping the NMOS area;
an active-protecting pattern in a same layer as the second gate electrode and passing through the second insulation layer and contacting the PMOS area, the active-protecting pattern being formed of a same material as the second gate electrode, and a portion of the active-protecting pattern being disposed on the upper surface of the second insulation layer;
a third insulation layer on the active-protecting pattern and the second gate electrode; and
a data metal electrode passing through the third insulation layer and contacting the active-protecting pattern.
8. The display device as claimed in claim 7 , further comprising:
a drain electrode electrically connected to the PMOS area or the NMOS area; and
an organic light-emitting diode electrically connected to the drain electrode.
9. The display device as claimed in claim 7 , wherein:
the PMOS area includes a p-channel area, a first p-doped area, and a second p-doped area spaced apart from the first p-doped area, and
the active-protecting pattern includes a first active-protecting pattern contacting the first p-doped area and a second active-protecting pattern contacting the second p-doped area.
10. The display device as claimed in claim 9 , further comprising:
a channel-protecting pattern between the first active-protecting pattern and the second active-protecting pattern and overlapping the p-channel area.
11. The display device as claimed in claim 7 , wherein the active-protecting pattern includes a material having a work function higher than the data metal electrode.
12. The display device as claimed in claim 11 , wherein the active-protecting pattern includes at least one of silver, nickel, tungsten, copper, chromium, and molybdenum.
13. The display device as claimed in claim 12 , wherein the data metal electrode includes at least one of magnesium, tantalum, titanium, and aluminum.