Display device with reduced warping and method for fabricating the same

1. A display device comprising:

a first substrate;

at least one wavelength conversion layer disposed on the first substrate;

a capping layer disposed on the wavelength conversion layer and comprising a porous layer and a first inorganic layer;

a planarization layer disposed on the capping layer;

a black matrix disposed between the capping layer and the first substrate; and

a first polarizing layer disposed on the planarization layer,

wherein the porous layer is disposed between the wavelength conversion layer and the first inorganic layer,

wherein the porous layer contacts the wavelength conversion layer and the black matrix, and

wherein the porous layer has a thermal expansion coefficient larger than the thermal expansion coefficient of the first inorganic layer and smaller than the thermal expansion coefficient of the planarization layer.

2. The display device of claim 1 , wherein the wavelength conversion layer comprises quantum dots.

3. The display device of claim 1 , wherein a thickness of the wavelength conversion layer ranges from 5 μm to 7 μm.

4. The display device of claim 1 , wherein the porous layer and the first inorganic layer are made of a same material.

5. The display device of claim 4 , wherein the porous layer and the first inorganic layer comprises at least one selected from a group consisting of silicon nitride, silicon oxide and silicon oxynitride.

6. The display device of claim 4 , wherein a density of the porous layer is smaller than that of the first inorganic layer.

7. The display device of claim 4 , wherein the thermal expansion coefficient of the porous layer ranges from 2.5 ppm/K to 5.0 ppm/K.

8. The display device of claim 1 , wherein the capping layer further comprises a second inorganic layer disposed on the first inorganic layer.

9. The display device of claim 8 , wherein the first inorganic layer and the second inorganic layer are made of different materials.

10. The display device of claim 9 , wherein the capping layer comprises a plurality of first inorganic layers and a plurality of second inorganic layers, and wherein the first inorganic layers and the second inorganic layers are alternately disposed.

11. The display device of claim 1 , wherein the capping layer is configured to transmit blue light and reflect green light and red light.

12. The display device of claim 1 , wherein the at least one wavelength conversion layer comprises a plurality of wavelength conversion layers, and wherein the wavelength conversion layers have different heights.

13. The display device of claim 1 , further comprising: a light-transmitting layer disposed adjacent to the wavelength conversion layer.

14. A method of fabricating a display device, the method comprising:

preparing a first substrate having at least one wavelength conversion layer and a black matrix;

forming a capping layer including a porous layer and a first inorganic layer;

forming a planarization layer on the capping layer; and

forming a first polarizing layer on the planarization layer,

wherein the forming the capping layer comprising a porous layer and a first inorganic layer comprises: forming the porous layer on the wavelength conversion layer and the black matrix, and forming a first inorganic layer on the porous layer, the porous layer contacting the wavelength conversion layer and the black matrix, and

wherein the porous layer has a thermal expansion coefficient larger than the thermal expansion coefficient of the first inorganic layer and smaller than the thermal expansion coefficient of the planarization layer.

15. The method of claim 14 , further comprising: forming a second inorganic layer on the first inorganic layer.

16. The display device of claim 15 , wherein the first inorganic layer and the second inorganic layer are made of different materials.

17. The method of claim 14 , wherein a process temperature for forming the porous layer ranges from 50° C. to 150° C., and a process temperature for forming the first inorganic layer is 200° C. or higher.