Methods, apparatus, and system for high-bandwidth on-mold antennas
A semiconductor device comprising an on-mold antenna for transmitting and/or receiving a millimeter-wave radio frequency signal is provided. The semiconductor device includes a semiconductor layer; a polymer layer proximal to the semiconductor layer; a mold proximal to the polymer layer; a plurality of nodes proximal to the semiconductor layer and distal to the polymer layer; an antenna disposed on the mold; and a conductive element providing electrical communication between the antenna and a first node. The mold may be from 500 μm to 1000 μm thick, such as from 750 μm to 800 μm thick, such as about 775 μm.
1. A semiconductor device, comprising:
a polymer layer comprising a first polymer surface and a second polymer surface;
a mold comprising a first mold surface and a second mold surface, wherein the first mold surface is adjacent to the second polymer surface;
a plurality of nodes disposed closer to the first polymer surface than to the second polymer surface;
an antenna disposed on the second mold surface; and
a first conductive element providing electrical communication between at least a first node and the antenna.
2. The semiconductor device of claim 1 , wherein the mold has a thickness ranging from about 500 μm to about 1000 μm.
3. The semiconductor device of claim 1 , further comprising:
a ground element disposed in the polymer layer or on the second polymer surface; and
a second conductive element providing electrical communication between at least a second node and the ground element.
4. The semiconductor device of claim 1 , further comprising:
a radio frequency (RF) filter disposed in the mold; and
a third conductive element providing electrical communication between at least a third node and the RF filter.
5. The semiconductor device of claim 3 , wherein the ground element is disposed on the second polymer surface, and the semiconductor device further comprises a ground shield extending from the ground element to the second mold surface and surrounding the antenna.
6. An apparatus, comprising:
a plurality of semiconductor devices, wherein each semiconductor device comprises:
a polymer layer comprising a first polymer surface and a second polymer surface;
a mold comprising a first mold surface and a second mold surface, wherein the first mold surface is adjacent to the second polymer surface;
a plurality of nodes disposed closer to the first polymer surface than to the second polymer surface;
an antenna disposed on the second mold surface; and
a first conductive element providing electrical communication between at least a first node and the antenna;
wherein a first subset of the semiconductor devices is configured as a receiver antenna array and a second subset of the semiconductor devices is configured as a transmitter antenna array.
7. The apparatus of claim 6 , wherein the mold of each semiconductor device has a thickness ranging from about 500 μm to about 1000 μm.
8. The apparatus of claim 6 , wherein each semiconductor device further comprises:
a ground element disposed in the polymer layer or on the second polymer surface; and
a second conductive element providing electrical communication between at least a second node and the ground element.
9. The apparatus of claim 6 , wherein each semiconductor device further comprises:
a radio frequency (RF) filter disposed in the mold; and
a third conductive element providing electrical communication between at least a third node and the RF filter.
10. The apparatus of claim 8 , wherein the ground element of each semiconductor device is disposed on the second polymer surface, and the semiconductor device further comprises a ground shield extending from the ground element to the second mold surface and surrounding the antenna.
11. The apparatus of claim 6 , wherein the apparatus is configured to receive, transmit, or both an RF signal having a first wavelength, and the semiconductor devices are positioned such that a spacing between the antennas of proximal semiconductor devices is about half the first wavelength.
12. A method, comprising:
forming a polymer layer comprising a first polymer surface and a second polymer surface;
forming a mold comprising a first mold surface and a second mold surface, wherein the first mold surface is adjacent to the second polymer surface;
forming a plurality of nodes disposed closer to the first polymer surface than to the second polymer surface;
forming an antenna disposed on the second mold surface; and
forming a first conductive element providing electrical communication between at least a first node and the antenna.
13. The method of claim 12 , wherein the forming the mold comprises forming the mold to have a thickness ranging from 500 μm to 1000 μm.
14. The method of claim 12 , further comprising:
forming a ground element disposed in the polymer layer or on the second polymer surface; and
forming a second conductive element providing electrical communication between at least a second node and the ground element.
15. The method of claim 12 , further comprising:
forming a radio frequency (RF) filter disposed in the mold; and
forming a third conductive element providing electrical communication between at least a third node and the RF filter.
16. The method of claim 14 , wherein the forming the ground element comprises forming the ground element on the second polymer surface, and the method further comprises forming a ground shield extending from the ground element to the second mold surface and surrounding the antenna.
17. The method of claim 12 , further comprising:
forming a plurality of semiconductor devices, each comprising the polymer layer, the mold, the plurality of nodes, the antenna, and the first conductive element; and
configuring a first subset of the plurality of semiconductor devices as a receiver antenna array, configuring a second subset of the plurality of semiconductor devices as a transmitter antenna array, or both.