Micro-pattern forming method, capacitor and method of manufacturing the same, semiconductor device and method of manufacturing the same, and electronic system including semiconductor device
A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts, selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.
1. A semiconductor device comprising:
a substrate;
a plurality of bottom electrodes passing through a supporting layer on the substrate;
a dielectric layer-on each of the plurality of bottom electrodes;
a top electrode on the dielectric layer,
wherein the plurality of bottom electrodes are respectively at positions of vertexes of a triangle, and
the supporting layer includes a through-hole at a position corresponding to a centroid of the triangle.
2. The semiconductor device of claim 1 , wherein the plurality of bottom electrodes do not contact the through-hole.
3. The semiconductor device of claim 1 , wherein each of the plurality of bottom electrodes has an aspect ratio of 10 to 40.
4. The semiconductor device of claim 1 , wherein a distance between a center of the through-hole and a center of one of the plurality of bottom electrodes is 10 nm to 50 nm.
5. The semiconductor device of claim 1 , wherein a distance between two closest ones of the plurality of bottom electrodes is 12 nm to 32 nm.
6. The semiconductor device of claim 1 , wherein the through-hole is between two closest ones of the plurality of bottom electrodes.
7. The semiconductor device of claim 1 , wherein a horizontal cross-section of the through-hole has a substantially circular shape or a substantially elliptical shape.
8. The semiconductor device of claim 1 , wherein a distance between a lower surface of the supporting layer and a lower end of a corresponding one of the plurality of bottom electrodes is 20% to 99% of a total height of the corresponding one of the plurality of bottom electrodes.
9. The semiconductor device of claim 1 , wherein upper portions of the plurality of bottom electrodes protrudes above an upper surface of the supporting layer.
10. The semiconductor device of claim 1 , wherein the plurality of bottom electrodes area pillar type or a cylinder type with an upper end opened.
11. The semiconductor device of claim 1 , wherein a capacitor is comprised of the top electrode, the dielectric layer and one of the plurality of bottom electrodes.
12. A semiconductor device comprising:
a plurality of transistors on a semiconductor substrate, each of the plurality of transistors including a gate structure and an impurity region;
a first interlayer insulation layer on the transistor;
a plurality of contact plugs, each of the plurality of contact plugs penetrating the first interlayer insulation layer and electrically connected to corresponding impurity region;
a plurality of bottom electrodes passing through a supporting layer on the first interlayer insulation layer, each of the plurality of bottom electrodes electrically connected to corresponding contact plug;
a dielectric layer-on each of the plurality of bottom electrodes; and
a top electrode on the dielectric layer,
wherein the supporting layer includes a through-hole at a position corresponding to a centroid of a triangle formed by three closest bottom electrodes.
13. The semiconductor device of claim 12 , wherein the triangle is an equilateral triangle.
14. The semiconductor device of claim 13 , wherein the plurality of bottom electrodes are arranged at vertexes of continuous equilateral triangles.
15. The semiconductor device of claim 12 , wherein each of the plurality of bottom electrodes has an aspect ratio of 10 to 40.
16. The semiconductor device of claim 12 , wherein the plurality of bottom electrodes do not contact the through-hole.
17. The semiconductor device of claim 12 , wherein upper portions of the plurality of bottom electrodes protrudes above an upper surface of the supporting layer.
18. The semiconductor device of claim 12 , wherein six closest ones of the through-holes are respectively disposed in vertexes of a regular hexagon.
19. The semiconductor device of claim 12 , wherein the plurality of bottom electrodes are a pillar type or a cylinder type with an upper end opened.
20. An electronic system comprising:
a controller;
an input/output unit configured to input or output data;
a memory configured to store data;
an interface configured to transmit data to an external device; and
a bus configured to connect the controller, the input/output unit, the memory, and the interface to communicate with each other,
wherein at least one of the controller and the memory comprises the semiconductor device of claim 12 .