Integrated gallium nitride based DC-DC converter
An integrated DC-DC converter device includes a plurality of GaN transistor sets. A first set of the plurality of GaN transistor sets includes transistors with a first drain-to-source distance, and wherein a second of the plurality of GaN transistor sets includes transistors with a second drain-to-source distance that is greater than the first drain-to-source distance.
1. An integrated DC-DC converter device, comprising:
a plurality of GaN transistor sets formed on a substrate, wherein a first set of the plurality of GaN transistor sets includes transistors with a first drain-to-source distance, and wherein a second set of the plurality of GaN transistor sets includes transistors with a second drain-to-source distance that is greater than the first drain-to-source distance; and
substrate well isolation between each of the plurality of GaN transistor sets.
2. The integrated DC-DC converter device of claim 1 , wherein a third set of the plurality of GaN transistor sets includes transistors with a third drain-to-source distance that is greater than the second drain-to-source distance.
3. The integrated DC-DC converter device of claim 2 , wherein a fourth set of the plurality of GaN transistor sets includes transistors with a fourth drain-to-source distance that is greater than the third drain-to-source distance.
4. The integrated DC-DC converter device of claim 3 , wherein a fifth set of the plurality of GaN transistor sets includes transistors with a fifth drain-to-source distance that is greater than the fourth drain-to-source distance.
5. The integrated DC-DC converter device of claim 1 , wherein the plurality of GaN transistor sets are associated with a single stage of a multi-stage DC-DC converter.
6. The integrated DC-DC converter device of claim 1 , wherein the plurality of GaN transistor sets are associated with multiple stages of a multi-stage DC-DC converter.
7. The integrated DC-DC converter device of claim 1 , further comprising gate drive components for a single stage of a multi-stage DC-DC converter.
8. The integrated DC-DC converter device of claim 1 , further comprising gate drive components for multiple stages of a multi-stage DC-DC converter.
9. The integrated DC-DC converter device of claim 1 , further comprising passive components for a single stage of a multi-stage DC-DC converter.
10. The integrated DC-DC converter device of claim 1 , further comprising passive components for multiple stages of a multi-stage DC-DC converter.
11. An integrated DC-DC converter device, comprising:
a plurality of GaN transistor sets formed on a substrate, wherein a first set of the plurality of GaN transistor sets includes transistors with a first drain-to-source distance, and wherein a second set of the plurality of GaN transistor sets includes transistors with a second drain-to-source distance that is greater than the first drain-to-source distance; and
silicon on insulator (SOI) isolation between each of the plurality of GaN transistor sets.
12. The integrated DC-DC converter device of claim 11 , wherein a third set of the plurality of GaN transistor sets includes transistors with a third drain-to-source distance that is greater than the second drain-to-source distance.
13. The integrated DC-DC converter device of claim 12 , wherein a fourth set of the plurality of GaN transistor sets includes transistors with a fourth drain-to-source distance that is greater than the third drain-to-source distance.
14. The integrated DC-DC converter device of claim 13 , wherein a fifth set of the plurality of GaN transistor sets includes transistors with a fifth drain-to-source distance that is greater than the fourth drain-to-source distance.
15. The integrated DC-DC converter device of claim 11 , wherein the plurality of GaN transistor sets are associated with a single stage of a multi-stage DC-DC converter.
16. The integrated DC-DC converter device of claim 11 , wherein the plurality of GaN transistor sets are associated with multiple stages of a multi-stage DC-DC converter.
17. The integrated DC-DC converter device of claim 11 , further comprising gate drive components for a single stage of a multi-stage DC-DC converter.
18. The integrated DC-DC converter device of claim 11 , further comprising gate drive components for multiple stages of a multi-stage DC-DC converter.
19. The integrated DC-DC converter device of claim 11 , further comprising passive components for a single stage of a multi-stage DC-DC converter.
20. The integrated DC-DC converter device of claim 11 , further comprising passive components for multiple stages of a multi-stage DC-DC converter.