Semiconductor device and method of manufacturing a semiconductor device
A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.
1. A semiconductor device, comprising:
a substrate;
a wiring formed on the substrate;
an anti-reflection film formed of titanium nitride on the wiring;
a silicon oxide film formed on the anti-reflection film;
a pad portion exposing the wiring, and formed at a place where a first opening portion formed in the silicon oxide film and a second opening portion formed in the anti-reflection film overlap with each other in plan view; and
a metal nitride region containing fewer dangling bonds than in the anti-reflection film, and formed in at least a part of one or both of an opposed surface of the anti-reflection film facing the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film being exposed in the second opening portion.
2. The semiconductor device according to claim 1 , wherein the metal nitride region containing fewer dangling bonds than in the anti-reflection film is formed on the opposed surface.
3. The semiconductor device according to claim 1 , wherein the metal nitride region containing fewer dangling bonds than in the anti-reflection film is formed of at least one type that is selected from the group consisting of titanium nitride, tantalum nitride, molybdenum nitride, and tungsten nitride.
4. The semiconductor device according to claim 2 , wherein the metal nitride region containing fewer dangling bonds than in the anti-reflection film is formed of at least one type that is selected from the group consisting of titanium nitride, tantalum nitride, molybdenum nitride, and tungsten nitride.
5. The semiconductor device according to claim 1 :
wherein a protection film is formed from a silicon nitride film on the silicon oxide film; and
wherein the pad portion is formed at a place where a third opening portion formed in the protection film, the first opening portion, and the second opening portion overlap with one another in plan view.
6. The semiconductor device according to claim 2 :
wherein a protection film is formed from a silicon nitride film on the silicon oxide film; and
wherein the pad portion is formed at a place where a third opening portion formed in the protection film, the first opening portion, and the second opening portion overlap with one another in plan view.
7. The semiconductor device according to claim 3 :
wherein a protection film is formed from a silicon nitride film on the silicon oxide film; and
wherein the pad portion is formed at a place where a third opening portion formed in the protection film, the first opening portion, and the second opening portion overlap with one another in plan view.
8. The semiconductor device according to claim 4 :
wherein a protection film is formed from a silicon nitride film on the silicon oxide film; and
wherein the pad portion is formed at a place where a third opening portion formed in the protection film, the first opening portion, and the second opening portion overlap with one another in plan view.