Method of forming semiconductor device
A semiconductor device and method of forming the same, the semiconductor device includes a substrate, first plug, a magnetoresistive random access memory (MRAM) structure, a spacer layer, a seal layer and a first conductive pattern. The substrate has a first region and a second region, and the first plug is disposed on a dielectric layer disposed on the substrate, within the first region. The MRAM structure is disposed in the dielectric layer and electrically connected to the first plug. The spacer layer is disposed both within the first region and the second region, to cover the MRAM structure. The seal layer is disposed on the MRAM structure and the first plug, only within the first region. The first conductive pattern penetrates through the seal layer to electrically connect the MRAM structure.
1. A method of forming a semiconductor device, comprising:
providing a substrate, the substrate having a first region and a second region;
forming a first dielectric layer on the substrate, covering the first region and the second region;
forming a first plug in the first dielectric layer, within the first region;
forming a magnetoresistive random access memory (MRAM) structure on the first dielectric layer within the first region, to electrically connect the first plug;
forming a spacer layer covering sidewalls of the MRAM structure, the spacer layer within the first region and the second region;
forming a second dielectric layer on the spacer layer;
forming a seal layer on the second dielectric layer, only within the first region; and
forming a first conductive pattern in a third dielectric layer on the seal layer, the first conductive pattern penetrated through the seal layer to electrically connect the MRAM structure.
2. The method of forming a semiconductor device according to claim 1 , wherein the forming of the spacer layer comprises:
forming a material layer covering the MRAM structure and the first dielectric layer; and
performing a planarization process to expose a top surface of the MRAM structure from the material layer.
3. The method of forming a semiconductor device according to claim 2 , further comprising:
after the planarization process, performing an etching process to lower the top surface of the MRAM structure till being lower than a top surface of the spacer layer.
4. The method of forming a semiconductor device according to claim 3 , wherein, after forming the first conductive pattern, the seal layer forms a protruding portion on the top surface of the MRAM structure.
5. The method of forming a semiconductor device according to claim 3 , wherein the top surface of the spacer layer is higher than the top surface of the MRAM structure.
6. The method of forming a semiconductor device according to claim 1 , wherein a top surface of the MRAM structure is higher than a top surface of the spacer layer after forming the first conductive pattern.
7. The method of forming a semiconductor memory device according to claim 1 , further comprising:
forming a second conductive pattern in the third dielectric layer, the second dielectric layer and the first dielectric layer.