Solid-state imaging device to improve photoelectric efficiency
A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.
1. A solid-state imaging device, comprising:
a first electrode;
a second electrode;
a photoelectric conversion film between the first electrode and the second electrode, wherein
the photoelectric conversion film is a co-deposited film that includes an organic semiconductor and an inorganic material, and
a volume ratio of the inorganic material in the co-deposited film is one of 70% or more or 30% or less; and
an insulating layer between the first electrode and the photoelectric conversion film, wherein the insulating layer is directly stacked on a portion of the first electrode.
2. The solid-state imaging device according to claim 1 , wherein
the inorganic material has a light transmittance in a visible range,
the light transmittance is at least 70%,
the organic semiconductor has a light absorption rate in the visible range, and
the light absorption rate is less than 30%.
3. The solid-state imaging device according to claim 1 , wherein the inorganic material has a bandgap energy of 3 eV or more.
4. The solid-state imaging device according to claim 1 , wherein the inorganic material comprises zinc sulfide (ZnS).
5. The solid-state imaging device according to claim 1 , wherein the inorganic material comprises titanium oxide (TiO2).
6. The solid-state imaging device according to claim 1 , wherein the organic semiconductor and the inorganic material are alternately and repetitively laminated in the photoelectric conversion film.
7. The solid-state imaging device according to claim 1 , wherein the organic semiconductor includes at least one of quinacridone, a quinacridone derivative, subphthalocyanine, or a subphthalocyanine derivative.
8. The solid-state imaging device according to claim 1 , further comprising:
a first element substrate including the photoelectric conversion film; and
a second element substrate including a signal processing circuit configured to signal process an electric signal that is photoelectrically converted in the photoelectric conversion film,
wherein the first element substrate and the second element substrate are laminated.
9. The solid-state imaging device according to claim 1 , further comprising:
a semiconductor substrate that includes at least one photoelectric conversion element,
wherein the first electrode, the photoelectric conversion film, and the second electrode are on the semiconductor substrate.