Resistance change device having electrode disposed between resistance switching layer and ferroelectric layer
A resistance change device according to an embodiment of the disclosure includes a first electrode, a resistance switching layer disposed on the first electrode, a second electrode disposed on the resistance switching layer, a ferroelectric layer disposed on the second electrode, and a third electrode disposed on the ferroelectric layer.
1. A resistance change device comprising:
a first electrode;
a resistance switching layer disposed on the first electrode;
a second electrode disposed on the resistance switching layer;
a ferroelectric layer disposed on the second electrode; and
a third electrode disposed on the ferroelectric layer.
2. The resistance change device of claim 1 , wherein the resistance switching layer can be reversibly switched between a low resistance state and a high resistance state, and
wherein the resistance switching layer further comprises a conductive filament connecting the first electrode to the second electrode when the resistance switching layer is in the low resistance state.
3. The resistance change device of claim 2 , wherein the ferroelectric layer has a remanent polarization, and wherein the remanent polarization generates an electric field that induces a flow of electrons from any one of the first and second electrodes to the conductive filament.
4. The resistance change device of claim 1 , wherein one of the first electrode and the second electrode comprises a metal supply layer in contact with the resistance switching layer.
5. The resistance change device of claim 4 , wherein metal ions supplied from the metal supply layer flow into the resistance switching layer.
6. The resistance change device of claim 4 , wherein the metal supply layer comprises at least one of copper (Cu), silver (Ag), copper-tellurium (Cu—Te) alloy, and silver-tellurium (Ag—Te) alloy.
7. The resistance change device of claim 1 , wherein the resistance switching layer has at least two resistance states and stores one of the at least two resistance states in a nonvolatile manner.
8. The resistance change device of claim 1 , wherein the resistance switching layer comprises a chalcogenide-based material or metal oxide.
9. The resistance change device of claim 8 , wherein the resistance switching layer comprises at least one selected from the group consisting of aluminum oxide, hafnium oxide, tantalum oxide, titanium oxide, zinc oxide, silicon oxide, silicon nitride, germanium-tellurium (Ge—Te), germanium-selenium-tellurium (Ge—Se—Te), indium-selenium (In—Se), antimony-tellurium (Sb—Te), arsenic-tellurium (As—Te), aluminum-tellurium (Al—Te), germanium-antimony-tellurium (Ge—Sb—Te), tellurium-germanium-arsenic (Te—Ge—As), indium-antimony-tellurium (In—Sb—Te), tellurium-tin-selenium (Te—Sn—Se), germanium-selenium-gallium (Ge—Se—Ga), bismuth-selenium-antimony (Bi—Se—Sb), gallium-selenium-tellurium (Ga—Se—Te), tin-antimony-tellurium (Sn—Sb—Te), tellurium-germanium-antimony-sulfur (Te—Ge—Sb—S), tellurium-germanium-tin-oxygen (Te—Ge—Sn—O), tellurium-germanium-tin-gold (Te—Ge—Sn—Au), palladium-tellurium-germanium-tin (Pd—Te—Ge—Sn), indium-selenium-titanium-cobalt (In—Se—Ti—Co), germanium-antimony-tellurium-palladium (Ge—Sb—Te—Pd), germanium-antimony-tellurium-cobalt (Ge—Sb—Te—Co), antimony-tellurium-bismuth-selenium (Sb—Te—Bi—Se), silver-indium-antimony-tellurium (Ag—In—Sb—Te), germanium-antimony-selenium-tellurium (Ge—Sb—Se—Te), germanium-tin-antimony-tellurium (Ge—Sn—Sb—Te), germanium-tellurium-tin-nickel (Ge—Te—Sn—Ni), germanium-tellurium-tin-palladium (Ge—Te—Sn—Pd), and germanium-tellurium-tin-platinum (Ge—Te—Sn—Pt).
10. The resistance change device of claim 1 , wherein the ferroelectric layer comprises at least one of hafnium oxide, zirconium oxide and hafnium zirconium oxide.
11. The resistance change device of claim 1 , wherein at least one of the first to third electrodes comprises a conductive material, and the conductive material comprises at least one of metal, metal nitride, metal oxide, doped silicon and conductive carbon structure.
12. A resistance change device comprising:
a first electrode, a resistance switching layer, a second electrode, a ferroelectric layer having a remanent polarization, and a third electrode that are sequentially disposed,
wherein the resistance switching layer has a variable electrical resistance depending on whether a conductive filament connecting the first and second electrodes to each other is formed in the resistance switching layer, and
wherein the remanent polarization generates an electric field that induces an inflow of electrons from at least one of the first and second electrodes into the conductive filament when the conductive filament is generated in the resistance switching layer.
13. The resistance change device of claim 12 , wherein one of the first electrode and the second electrode comprises a metal supply layer in contact with the resistance switching layer.
14. The resistance change device of claim 13 , wherein the conductive filament comprises metal supplied from the metal supply layer.
15. The resistance change device of claim 13 , wherein the metal supply layer comprises at least one of copper (Cu), silver (Ag), copper-tellurium (Cu—Te) alloy, and silver-tellurium (Ag—Te) alloy.
16. The resistance change device of claim 12 , wherein the resistance switching layer comprises a chalcogenide-based material or metal oxide.
17. The resistance change device of claim 16 , wherein the resistance switching layer comprises at least one selected from the group consisting of aluminum oxide, hafnium oxide, tantalum oxide, titanium oxide, zinc oxide, silicon oxide, silicon nitride, germanium-tellurium (Ge—Te), germanium-selenium-tellurium (Ge—Se—Te), indium-selenium (In—Se), antimony-tellurium (Sb—Te), arsenic-tellurium (As—Te), aluminum-tellurium (Al—Te), germanium-antimony-tellurium (Ge—Sb—Te), tellurium-germanium-arsenic (Te—Ge—As), indium-antimony-tellurium (In—Sb—Te), tellurium-tin-selenium (Te—Sn—Se), germanium-selenium-gallium (Ge—Se—Ga), bismuth-selenium-antimony (Bi—Se—Sb), gallium-selenium-tellurium (Ga—Se—Te), tin-antimony-tellurium (Sn—Sb—Te), tellurium-germanium-antimony-sulfur (Te—Ge—Sb—S), tellurium-germanium-tin-oxygen (Te—Ge—Sn—O), tellurium-germanium-tin-gold (Te—Ge—Sn—Au), palladium-tellurium-germanium-tin (Pd—Te—Ge—Sn), indium-selenium-titanium-cobalt (In—Se—Ti—Co), germanium-antimony-tellurium-palladium (Ge—Sb—Te—Pd), germanium-antimony-tellurium-cobalt (Ge—Sb—Te—Co), antimony-tellurium-bismuth-selenium (Sb—Te—Bi—Se), silver-indium-antimony-tellurium (Ag—In—Sb—Te), germanium-antimony-selenium-tellurium (Ge—Sb—Se—Te), germanium-tin-antimony-tellurium (Ge—Sn—Sb—Te), germanium-tellurium-tin-nickel (Ge—Te—Sn—Ni), germanium-tellurium-tin-palladium (Ge—Te—Sn—Pd), and germanium-tellurium-tin-platinum (Ge—Te—Sn—Pt).
18. The resistance change device of claim 12 , wherein the ferroelectric layer comprises at least one of hafnium oxide, zirconium oxide and hafnium zirconium oxide.
19. The resistance change device of claim 12 , wherein at least one of the first to third electrodes comprises a conductive material, and the conductive material comprises at least one of metal, metal nitride, metal oxide, doped silicon and conductive carbon structure.
20. The resistance change device of claim 12 , wherein the remanent polarization includes an inflow of the electrons into the conductive filament to suppress oxidation of the conductive filament.