Efficient switching circuit

1. A switching device comprising:

a first leg comprising a plurality of transistors connected in series;

a second leg comprising a transistor connected in series to a first diode, the second leg being connected in parallel to the first leg, wherein the transistor of the second leg includes a body diode, a source terminal, and a drain terminal, wherein an anode of the body diode is connected to the source terminal, wherein a cathode of the body diode is connected to the drain terminal, and wherein the first diode is oriented to prevent current from flowing through the body diode; and

a controller controlling the plurality of transistors of the first leg and the transistor of the second leg,

wherein the controller is configured to transition the switching device from a non-conduction period to a conduction period by first turning the transistor of the second leg from an OFF state to an ON state and then turning the plurality of transistors of the first leg from an OFF state to an ON state, and

wherein the controller is further configured to transition the switching device from the conduction period to the non-conduction period by first turning the plurality of transistors of the first leg from the ON state to the OFF state and then turning the transistor of the second leg from the ON state to the OFF state.

2. The switching device of claim 1 , wherein the plurality of transistors of the first leg comprise at least two low-voltage MOSFETs.

3. The switching device of claim 1 , wherein the transistor of the second leg comprises a high-voltage MOSFET.

4. The switching device of claim 2 , wherein the at least two low-voltage MOSFETs each have a rated maximum voltage of no more than 200V 120V.

5. The switching device of claim 1 , further comprising a third leg coupled in parallel to the first leg and the second leg, the third leg comprising a second diode.

6. The switching device of claim 5 , wherein the second diode is a Schottky diode.

7. The switching device of claim 5 , wherein the second diode is a silicon-carbide diode.

8. The switching device of claim 1 , wherein the second leg further comprises a second transistor connected in series with the transistor of the second leg.

9. The switching device of claim 5 , wherein the second diode is oriented in a same direction as the body diode and having a lower conduction voltage compared to the body diode.

10. A method of forming a switching device, comprising:

connecting a plurality of transistors in series to form a first leg;

connecting a second leg in parallel to the first leg, the second leg comprising a transistor and a first diode connected in series, wherein the transistor of the second leg includes a body diode, a source terminal, and a drain terminal, wherein an anode of the body diode is connected to the source terminal, wherein a cathode of the body diode is connected to the drain terminal, and wherein the first diode is oriented to prevent current from flowing through the body diode; and

controlling the plurality of transistors of the first leg and the transistor of the second leg by:

transitioning the switching device from non-conduction period to a conduction period by first turning the transistor of the second leg from an OFF state to an ON state and then turning the plurality of transistors of the first leg from an OFF state to an ON state, and

transitioning the switching device from the conduction period to the non-conduction period by first turning the plurality of transistors of the first leg from the ON state to the OFF state and then turning the transistor of the second leg from the ON state to the OFF state.

11. The method of claim 10 , further comprising:

connecting a third leg in parallel with the first leg and with the second leg, the third leg comprising a second diode oriented in a same direction as the body diode and having a lower conduction voltage compared to the body diode.

12. The method of claim 11 , wherein the second diode is a Schottky diode.

13. The method of claim 11 , wherein the second diode is a silicon-carbide diode.

14. The method of claim 10 , wherein the plurality of transistors of the first leg comprise at least two low-voltage MOSFETs.

15. The method of claim 10 , wherein the transistor of the second leg comprises a high-voltage MOSFET.

16. The method of claim 14 , wherein the at least two low-voltage MOSFETs have a rated maximum voltage of no more than 200V.

17. The method of claim 10 , further comprising:

connecting a second transistor connected in series with the transistor in the second leg.

18. A switching device comprising:

a first leg comprising a first plurality of transistors connected in series;

a second leg comprising a second plurality of transistors connected in series, the second leg connected in parallel to the first leg, wherein the second plurality of transistors comprise a first transistor connected in series to a first diode, wherein the first transistor comprises a body diode having an node connected to a source terminal of the first transistor and having a cathode connected to a drain terminal of the first transistor, and wherein the first diode is oriented to prevent current from flowing through the body diode; and

a controller controlling the first plurality of transistors of the first leg and the second plurality of transistors of the second leg,

wherein the controller is configured to transition the switching device from a non-conduction period to a conduction period by first turning the second plurality of transistors of the second leg from an OFF state to an ON state and then turning the first plurality of transistors of the first leg from an OFF state to an ON state, and

wherein the controller is further configured to transition the switching device from the conduction period to the non-conduction period by first turning the first plurality of transistors of the first leg from the ON state to the OFF state and then turning the second plurality of transistors of the second leg from the ON state to the OFF state.