Array substrate, display panel and display device
An array substrate is provided, including a plurality of pixel unit pairs arranged in an array and defined by mutually intersected gate lines and data lines. Two of the gate lines are arranged between the pixel unit pairs in adjacent rows, each pixel unit pair includes a first pixel unit and a second pixel unit, and a gate insulation layer, a first metal layer, a passivation layer and a pixel electrode layer are stacked on a base substrate and arranged between the first pixel unit and the second pixel unit. Orthographic projections of the pixel electrode layer and the first metal layer onto the base substrate partially overlap to form a storage capacitor, and the first metal layer is connected to a common electrode layer of each pixel unit pair in a lap joint manner.
1. An array substrate, comprising a plurality of pixel unit pairs arranged in an array and defined by mutually intersected gate lines and data lines;
wherein two of the gate lines are arranged between the pixel unit pairs in adjacent rows, each of the pixel unit pairs comprises a first pixel unit and a second pixel unit, and a gate insulation layer, a first metal layer, a passivation layer and a pixel electrode layer are stacked on a base substrate and between the first pixel unit and the second pixel unit; and
wherein an orthographic projection of the pixel electrode layer onto the base substrate at least partially overlaps an orthographic projection of the first metal layer onto the base substrate to form a storage capacitor, and the first metal layer is connected to a common electrode layer of each pixel unit pair in a lap joint manner;
wherein the base substrate is at a side of the gate insulation layer away from the first metal layer, the common electrode layer is at a side of the first metal layer close to the base substrate, and a vertical distance between the first metal layer and the base substrate is greater than a vertical distance between the common electrode layer and the base substrate.
2. The array substrate according to claim 1 , wherein the first metal layer is arranged in an identical layer to a source and drain electrode layer of a thin film transistor of each pixel unit pair.
3. The array substrate according to claim 1 , wherein the common electrode layer is arranged in an identical layer to a gate electrode layer of a thin film transistor of each pixel unit pair.
4. The array substrate according to claim 1 , wherein the passivation layer is provided with a lapping hole configured to connect the first metal layer to the common electrode layer of each pixel unit pair in the lap joint manner, and a conductive layer is arranged in the lapping hole to enable the first metal layer to be connected to the common electrode layer of each pixel unit pair in the lap joint manner.
5. The array substrate according to claim 4 , wherein the conductive layer is arranged in an identical layer to the pixel electrode layer.
6. The array substrate according to claim 1 , wherein the array substrate is a twisted nematic liquid crystal display (TN-LCD) array substrate.
7. The array substrate according to claim 1 , wherein a thickness of the passivation layer is from 2500 Å to 6000 Å.
8. The array substrate according to claim 1 , wherein a thickness of the gate insulation layer is from 3000 Å to 4000 Å.
9. The array substrate according to claim 1 , wherein an orthographic projection of the passivation layer onto the base substrate at least partially overlaps orthographic projections of the pixel electrode layer and the first metal layer onto the base substrate.
10. The array substrate according to claim 1 , wherein the orthographic projection of the first metal layer onto the base substrate at least partially overlaps an orthographic projection of the common electrode layer onto the base substrate.
11. The array substrate according to claim 1 , wherein an extending direction of the first metal layer is parallel to an extending direction of each of the data lines.
12. The array substrate according to claim 1 , wherein the common electrode layer and the first metal layer are arranged around the first pixel unit and the second pixel unit.
13. The array substrate according to claim 4 , wherein the conductive layer is in direct contact with the first metal layer and the common electrode layer.
14. A display panel, comprising an array substrate, wherein the array substrate comprises a plurality of pixel unit pairs arranged in an array and defined by mutually intersected gate lines and data lines;
wherein two of the gate lines are arranged between the pixel unit pairs in adjacent rows, each of the pixel unit pairs comprises a first pixel unit and a second pixel unit, and a gate insulation layer, a first metal layer, a passivation layer and a pixel electrode layer are stacked on a base substrate and between the first pixel unit and the second pixel unit; and
wherein an orthographic projection of the pixel electrode layer onto the base substrate at least partially overlaps an orthographic projection of the first metal layer onto the base substrate to form a storage capacitor, and the first metal layer is connected to a common electrode layer of each pixel unit pair in a lap joint manner;
wherein the base substrate is at a side of the gate insulation layer away from the first metal layer, the common electrode layer is at a side of the first metal layer close to the base substrate, and a vertical distance between the first metal layer and the base substrate is greater than a vertical distance between the common electrode layer and the base substrate.
15. A display device, comprising a display panel, wherein the display panel comprises an array substrate, and the array substrate comprises a plurality of pixel unit pairs arranged in an array and defined by mutually intersected gate lines and data lines;
wherein two of the gate lines are arranged between the pixel unit pairs in adjacent rows, each of the pixel unit pairs comprises a first pixel unit and a second pixel unit, and a gate insulation layer, a first metal layer, a passivation layer and a pixel electrode layer are stacked on a base substrate and between the first pixel unit and the second pixel unit; and
wherein an orthographic projection of the pixel electrode layer onto the base substrate at least partially overlaps an orthographic projection of the first metal layer onto the base substrate to form a storage capacitor, and the first metal layer is connected to a common electrode layer of each pixel unit pair in a lap joint manner;
wherein the base substrate is at a side of the gate insulation layer away from the first metal layer, the common electrode layer is at a side of the first metal layer close to the base substrate, and a vertical distance between the first metal layer and the base substrate is greater than a vertical distance between the common electrode layer and the base substrate.