Semiconductor device
A semiconductor device having an input terminal and an output terminal. The semiconductor device includes a power semiconductor element having a first main terminal connected to the output terminal, a second main terminal that is grounded and a gate terminal, and an active clamping circuit including a Zener diode and a diode connected in inverse series between the gate terminal and the first main terminal of the power semiconductor element. The semiconductor device further includes a clamp voltage switching circuit configured to switch a clamp voltage of the active clamping circuit according to a change in a voltage of the output terminal relative to the ground at a time when the power semiconductor element is turned off, the clamp voltage being switched to a first clamp voltage and a second clamp voltage, respectively, when the change in the voltage is not, and is, positive.
1. A semiconductor device having an input terminal and an output terminal, the semiconductor device comprising:
a power semiconductor element having
a first main terminal connected to the output terminal of the semiconductor device,
a second main terminal connected to the ground, and
a gate terminal;
an active clamping circuit including a Zener diode and a diode connected in inverse series between the gate terminal and the first main terminal of the power semiconductor element; and
a clamp voltage switching circuit connected to the active clamping circuit and the output terminal of the semiconductor device, the clamp voltage switching circuit being configured to switch a clamp voltage of the active clamping circuit according to a change in a voltage of the output terminal relative to the ground at a time when the power semiconductor element is turned off, the clamp voltage being switched to
a first clamp voltage when the change in the voltage is not positive, and
a second clamp voltage lower than the first clamp voltage when the change in the voltage is positive.
2. The semiconductor device according to claim 1 , wherein:
the Zener diode of the active clamping circuit is made up of a first Zener diode and a second Zener diode which are connected in series and have a total Zener voltage equal to the first clamp voltage; and
one of the first Zener diode and the second Zener diode has a Zener voltage equal to the second clamp voltage.
3. The semiconductor device according to claim 2 , wherein at least one of the first Zener diode and the second Zener diode is made up of a plurality of Zener diodes connected in series.
4. The semiconductor device according to claim 2 , wherein the clamp voltage switching circuit includes:
a circuit including a capacitor and one of a resistor and a constant-current element that is connected in series with the capacitor, the circuit being connected in parallel with the first Zener diode and the second Zener diode connected in series; and
a switching element connected to a connection point of the capacitor and the resistor or the constant-current element, and to one of the first Zener diode and the second Zener diode, which is short-circuitable by the switching element.
5. The semiconductor device according to claim 4 , wherein the power semiconductor element and the clamp voltage switching circuit are formed in an n-type substrate.
6. The semiconductor device according to claim 5 , wherein the capacitor is realized by a pn junction capacitor of another diode formed in the n-type substrate.
7. The semiconductor device according to claim 5 , wherein
the capacitor includes a metal-oxide-semiconductor field-effect transistor (MOSFET) formed in the n-type substrate, and
a capacitance value of the capacitor is equal to a combined capacitance value of a gate-source capacitor and a gate-drain capacitor of the MOSFET.
8. The semiconductor device according to claim 5 , wherein the resistor is a polysilicon resistor formed on an upper surface of the n-type substrate.
9. The semiconductor device according to claim 5 , wherein the constant-current element includes a depletion-type metal-oxide-semiconductor field-effect transistor (MOSFET) formed in the n-type substrate, the depletion-type MOSFET having a gate terminal and a source terminal connected to each other.
10. The semiconductor device according to claim 2 , wherein the clamp voltage switching circuit includes:
a circuit including a capacitor and one of a resistor and a constant-current element that is connected in series with the capacitor, the circuit being connected to the first main terminal and the second main terminal of the power semiconductor element; and
a switching element connected to a connection point of the capacitor and the resistor or the constant-current element, and to one of the first Zener diode and the second Zener diode, which is short-circuitable by the switching element.
11. The semiconductor device according to claim 10 , wherein the power semiconductor element and the clamp voltage switching circuit are formed in an n-type substrate.
12. The semiconductor device according to claim 11 , wherein the capacitor is realized by a pn junction capacitor of another diode formed in the n-type substrate.
13. The semiconductor device according to claim 11 , wherein
the capacitor includes a metal-oxide-semiconductor field-effect transistor (MOSFET) formed in the n-type substrate, and
a capacitance value of the capacitor is equal to a combined capacitance value of a gate-source capacitor and a gate-drain capacitor of the MOSFET.
14. The semiconductor device according to claim 11 , wherein the resistor is a polysilicon resistor formed on an upper surface of the n-type substrate.
15. The semiconductor device according to claim 11 , wherein the constant-current element includes a depletion-type metal-oxide-semiconductor field-effect transistor (MOSFET) formed in the n-type substrate, and the depletion-type MOSFET having a gate terminal and a source terminal connected to each other.
16. The semiconductor device according to claim 1 , further comprising another diode connected in inverse parallel with the power semiconductor element, wherein
the first clamp voltage is lower than a breakdown voltage of said another diode.