IP Library › Granted Patent US 10,621,267
Granted Patent B2
US 10,621,267 · App. 16/064,655 · Granted Apr 14, 2020

Memristor crossbar array for performing a fourier transformation

Inventors: John Paul Strachan (San Carlos, CA); Miao Hu (Palo Alto, CA); R. Stanley Williams (Portola Valley, CA); Zhiyong Li (Foster City, CA)
Assignee: Hewlett Packard Enterprise Development LP
G06F17/141G06J1/005H01L27/2463
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Quick Facts
Patent No.
US 10,621,267
App. No.
16/064,655
Granted
Apr 14, 2020
Kind
B2
Abstract

A technique includes providing a first set of values to a memristor crossbar array and using the memristor crossbar array to perform a Fourier transformation. Using the memristor crossbar array to perform the Fourier transform includes using the array to apply a Discrete Fourier Transform (DFT) to the first set of values to provide a second set of values.

Claims (42)

1. A method comprising:

providing a first set of values to a memristor crossbar array; and

using the memristor crossbar array perform a Fourier transformation, wherein using the array comprises using the array to apply a Discrete Fourier Transform (DFT) to the first set of values to provide a second set of values.

2. The method of claim 1 , further comprising:

providing a memristor crossbar array having an array of conductances corresponding to a matrix transposition of a DFT matrix associated with the OFT.

3. The method of claim 1 , wherein:

the memristor crossbar array comprises an array of conductances associated with rows and columns;

a given column of the array conductances is associated with a row of a OFT matrix; and

using the memristor array comprises summing currents associated with the conductances of the given column to provide a given second value of the second values.

4. The method of claim 1 , wherein:

the first set of values comprise real values;

the second set of values comprise complex values; and

using the memristor crossbar array further comprises:

using a first part of the memristor crossbar array to apply a first OFT matrix to the first set of values to provide real components of the complex values; and

using a second part of the memristor crossbar array to apply a second DFT matrix to the second set of values to provide imaginary components of the complex values.

5. The method of claim 1 , wherein using the memristor crossbar comprises using N rows of the memristor crossbar by N columns of the memristor crossbar to determine an N point DFT.

6. An apparatus comprising:

a memristor crossbar array-based accelerator to receive a first set of values and apply a Discrete Fourier Transform (DFT) to the first set of values to provide a second set of values,

wherein the DFT comprises cascaded stages and the memristor crossbar array comprises a plurality of memristor crossbar arrays associated with the cascaded stages.

7. The apparatus of claim 6 , wherein:

a given cascaded stage of the cascaded stages receives a complex value input and applies a butterfly stage DFT to provide a complex value output.

8. The apparatus of claim 7 , wherein the memristor crossbar array associated with the given cascaded stage comprises:

a first plurality of conductors associated with the complex value input;

a second plurality of conductors associated with the complex value output; and

memristors, each memristor to couple one of the conductors of the first plurality of conductors to one of the conductors of the second plurality of conductors.

9. The apparatus of claim 6 , wherein the DFT comprises an N point transform, and the memristor crossbar array comprises a log(N) number of the memristor crossbar arrays.

10. The apparatus of claim 6 , wherein the first set of values comprise continuous values signals.

11. The apparatus of claim 6 , wherein the first set of values comprise discrete samples of a continuous signal.

12. An apparatus comprising:

an array comprising:

a first plurality of conductors;

a second plurality of conductors having associated intersections with the first plurality of conductors; and

memristors associated with the intersections, wherein the memristors have conductances to form an array of conductances corresponding to a matrix transposition of a Discrete Fourier Transform (OFT) matrix.

13. The apparatus of claim 12 , wherein:

the first plurality of conductors comprise real values;

the second plurality of conductors complex values; and

the memristor crossbar array comprises:

a first subarray to apply a first DFT matrix to the signals associated with the real value input to provide real components of the complex values; and

a second subarray to apply a second DFT matrix to the signals associated with real value input to provide imaginary components of the complex values.

14. The apparatus of claim 13 , wherein the memristor crossbar array comprises using N rows by N columns of memristors, and the DFT matrix comprises an N point DFT matrix.

15. The apparatus of claim 14 , further comprising:

a processor to provide a signal to the array and receive a signal from the array representing application of the DFT matrix to the provided signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 12, 2018
From: STRACHAN, JOHN PAUL; HU, MIAO; WILLIAMS, R. STANLEY; LI, ZHIYONG
To: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Reel/Frame 046332/0732 →
Continuity (1)
Related Publication 20180373675A1 · Dec 27, 2018
Cited By (3)
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