Planar substrate edge contact with open volume equalization pathways and side containment
A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass through the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.
1. A pedestal for a substrate processing system, comprising:
a pedestal body including a substrate-facing surface and an annular notch around a radially outer edge thereof;
an annular band arranged on the substrate-facing surface that is configured to support a radially outer edge of a substrate; and
a cavity that is defined in the substrate-facing surface of the pedestal body and that is located radially inside of the annular band, wherein the cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body;
a plurality of vents passing through the pedestal body and in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing,
wherein the plurality of vents each include:
a first vent portion extending radially inwardly from a radially outer side of the pedestal body; and
a second vent portion extending perpendicularly from a radially inner edge of the first vent portion to the cavity; and
a ring that is separate from the pedestal body and that is arranged in the annular notch on the pedestal body,
wherein a bottom surface of the ring lies below a bottom surface of the substrate,
wherein a top surface of the ring lies below a top surface of the substrate, and
wherein the ring is made of a dielectric material.
2. The pedestal of claim 1 , wherein the annular band has a width in a range from 4 mm to 12 mm.
3. The pedestal of claim 1 , wherein the annular band has a width in a range from 5 mm to 9 mm.
4. The pedestal of claim 1 , wherein the annular band has a width in a range from 6 mm to 7 mm.
5. The pedestal of claim 1 , wherein the annular band has a surface roughness (Ra) in a range from 2 to 32.
6. The pedestal of claim 5 , wherein the surface roughness (Ra) in a range from 2 to 24.
7. The pedestal of claim 5 , wherein the surface roughness (Ra) in a range from 2 to 16.
8. The pedestal of claim 1 , wherein the annular band is made of a material selected from a group consisting of a dielectric coating formed on a surface of a conductive material, an uncoated conductive material, an uncoated metal, and an uncoated dielectric material.
9. The pedestal of claim 1 , wherein the dielectric material is selected from a group consisting of alumina, aluminum nitride, sapphire, quartz, and silicon oxide.
10. The pedestal of claim 1 , further comprising:
a plurality of pins arranged in the cavity to support a center of the substrate,
wherein a top surface of the pins is one of below, parallel to or above a top surface of the annular band during processing.
11. The pedestal of claim 1 , further comprising:
a plurality of projections to support a center of the substrate,
wherein a top surface of the projections is one of below, parallel to or above a top surface of the annular band.
12. The pedestal of claim 1 , wherein the annular band is configured to support a backside surface of the substrate along the radially outer edge such that the substrate is parallel to the annular band during processing.
13. The pedestal of claim 1 , further comprising a plurality of projections extending upwardly from the pedestal body in the cavity.
14. A pedestal for a substrate processing system, comprising:
a pedestal body including a substrate-facing surface;
an annular band arranged on the substrate-facing surface that is configured to support a radially outer edge of a substrate; and
a cavity that is defined in the substrate-facing surface of the pedestal body and that is located radially inside of the annular band, wherein the cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body;
a plurality of vents passing through the pedestal body and in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing,
wherein the plurality of vents each include:
a first vent portion extending radially inwardly from a radially outer side of the pedestal body; and
a second vent portion extending perpendicularly from a radially inner edge of the first vent portion to the cavity; and
a ring that is separate from the pedestal body and that is arranged radially outside of the substrate and the annular band on the pedestal body,
wherein a top surface of the ring is arranged above a top surface of the substrate, and
wherein the ring is made of a dielectric material.
15. The pedestal of claim 14 , wherein the dielectric material is selected from a group consisting of alumina, aluminum nitride, sapphire, quartz, and silicon oxide.
16. A pedestal for a substrate processing system, comprising:
a pedestal body including a substrate-facing surface
an annular band arranged on the substrate-facing surface that is configured to support a radially outer edge of a substrate; and
a cavity that is defined in the substrate-facing surface of the pedestal body and that is located radially inside of the annular band, wherein the cavity creates a volume between a bottom surface of the substrate and the substrate-facinq surface of the pedestal body;
a plurality of vents passing through the pedestal body and in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing,
wherein the plurality of vents each include:
a first vent portion extending radially inwardly from a radially outer side of the pedestal body; and
a second vent portion extending perpendicularly from a radially inner edge of the first vent portion to the cavity; and
a ring that is separate from the pedestal body, that is arranged on the pedestal body, and that includes a radially inner surface arranged radially inside of and below the substrate and a radially outer surface arranged radially outside of the substrate,
wherein a top surface of the ring is parallel to a top surface of the substrate, and
wherein the ring is made of a dielectric material.
17. The pedestal of claim 16 , wherein the dielectric material is selected from a group consisting of alumina, aluminum nitride, sapphire, quartz, and silicon oxide.
18. A substrate processing system comprising:
a processing chamber;
the pedestal of claim 1 , wherein the pedestal is arranged in the processing chamber; and
an RF generator arranged in the processing chamber.
19. The substrate processing system of claim 18 , further comprising:
a plurality of minimum contact area (MCA) pins extendable from the pedestal body; and
a controller configured to extend the MCA pins during processing such that a top surface of the MCA pins is one of below, parallel to or above the annular band.