IP Library › Granted Patent US 10,623,852
Granted Patent B2
US 10,623,852 · App. 16/150,591 · Granted Apr 14, 2020

MEMS devices and processes

Inventors: Scott Lyall Cargill (Edinburgh, GB); Timothy John Brosnihan (Austin, TX)
Assignee: Cirrus Logic, Inc.
H04R1/342B81B3/0021B81B3/0078H04R19/005H04R31/00B81B2201/0257B81B2203/0127H04R19/04H04R2201/003H04R2499/11
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Quick Facts
Patent No.
US 10,623,852
App. No.
16/150,591
Granted
Apr 14, 2020
Kind
B2
Abstract

The application relates to MEMS transducers comprising at least one support structure for connecting a backplate structure of the transducer with an underlying substrate. A strengthening portion is provided in the region of the support structure.

Claims (24)

1. A MEMS transducer comprising:

a substrate;

a backplate structure comprising a raised portion provided in a plane above the substrate;

at least one support structure comprising a depression formed in the raised portion of the backplate structure which connects the backplate structure to the substrate; and

a strengthening portion provided on an upper surface of the backplate structure in the region of the depression.

2. The MEMS transducer as claimed in claim 1 , wherein the strengthening portion is conformal to the upper surface of the backplate structure in the region of the depression.

3. The MEMS transducer as claimed in claim 1 , wherein the strengthening portion substantially fills the depression formed in the raised portion of the backplate structure.

4. The MEMS transducer as claimed in claim 1 , wherein the strengthening portion is substantially conformal with upper surface of the first backplate layer and/or with the adjacent lower surface of the second backplate layer.

5. The MEMS transducer as claimed in claim 1 , wherein the strengthening portion comprises metal.

6. The MEMS transducer as claimed in claim 1 , wherein the substrate comprises a cavity and wherein the strengthening portion extends into a region laterally surrounding the region of the support structure.

7. The MEMS transducer as claimed claim 6 , wherein the strengthening portion does not extend over a central region of the substrate cavity.

8. The MEMS transducer as claimed in claim 6 , wherein the support structure is provided laterally inside a boundary defined by a sidewall portion of the backplate structure and is at least partially in a region laterally outside the substrate cavity.

9. The MEMS transducer as claimed in claim 6 , wherein the support structure partially overlies the substrate cavity.

10. The MEMS transducer as claimed in claim 1 , further comprising a membrane layer supported relative to the substrate so as to define a flexible membrane region, the membrane layer being provided between the backplate structure and the substrate.

11. The MEMS transducer as claimed in claim 1 , further comprising a membrane layer supported relative to the substrate so as to define a flexible membrane region, the membrane layer being provided between the backplate structure and the substrate and wherein the first part of the support structure comprises a portion of the membrane layer.

12. The MEMS transducer as claimed in claim 10 , wherein the support structure connects the membrane layer to the substrate.

13. The MEMS transducer as claimed in claim 1 , wherein the support structure defines a cross section that is generally D-shaped and comprises a straight edge-portion and a curved edge-portion, and wherein the straight edge-portion is substantially parallel to an adjacent perimeter of the membrane layer.

14. The MEMS transducer as claimed in claim 10 , further comprising a membrane electrode supported by the flexible membrane region.

15. An integrated circuit comprising the MEMS transducer as claimed in claim 1 and readout circuitry.

16. A MEMS transducer comprising:

a substrate;

a backplate structure comprising a raised portion provided in a plane above the substrate, wherein the backplate structure comprises a plurality of layers;

at least one support structure comprising a depression formed in the raised portion of the backplate structure which connects the backplate structure to the substrate; and

a strengthening portion provided within the support structure between first and second adjacent backplate layers.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2020
From: CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD.
To: CIRRUS LOGIC, INC.
Reel/Frame 051788/0856 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2018
From: CARGILL, SCOTT LYALL; BROSNIHAN, TIMOTHY JOHN
To: CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD.
Reel/Frame 047052/0835 →
Priority Claims (1)
GB 1717173.7 · Oct 19, 2017 · national
Continuity (2)
Provisional Application 62568447 · Oct 5, 2017
Related Publication 20190110126A1 · Apr 11, 2019