Method for manufacturing composite wafer provided with oxide single crystal thin film
A composite wafer includes an oxide single crystal thin film of lithium tantalate or lithium niobate transferred onto the entire face of a support wafer and is free from cracking or peeling on a bonding interface between the support wafer and the oxide single crystal thin film. A method for manufacturing a composite wafer at least includes a step of forming an ion-implanted layer in an oxide single crystal wafer, a step of subjecting at least one of the ion-implanted surface of the oxide single crystal wafer and a surface of a support wafer to a surface activation treatment, a step of bonding the ion-implanted surface of the oxide single crystal wafer to the surface of the support wafer to form a laminate, a step of subjecting the laminate to a first heat treatment at a temperature not less than 90° C. and not causing cracking, a step of applying a mechanical impact to the ion-implanted layer, and a step of subjecting the support wafer having the transferred oxide single crystal thin film to a second heat treatment at 250° C. to 600° C. to yield a composite wafer.
1. A method for manufacturing a composite wafer including an oxide single crystal thin film on a support wafer, the method at least comprising the steps of:
implanting atomic hydrogen ions or molecular hydrogen ions through a surface of an oxide single crystal wafer that is a lithium tantalate wafer or a lithium niobate wafer to form an ion-implanted layer in the oxide single crystal wafer;
subjecting at least one of the ion-implanted surface of the oxide single crystal wafer and a surface of a support wafer to be bonded to the oxide single crystal wafer, to a surface activation treatment;
after the surface activation treatment, bonding the ion-implanted surface of the oxide single crystal wafer to the surface of the support wafer to yield a laminate;
subjecting the laminate to a first heat treatment at a temperature not less than 90° C. and not causing cracking;
applying a mechanical impact to the ion-implanted layer of the laminate after the first heat treatment, thus separating the laminate along the ion-implanted layer to yield an oxide single crystal thin film transferred onto the support wafer; and
subjecting the support wafer having the transferred oxide single crystal thin film to a second heat treatment at 250° C. to 600° C. to yield a composite wafer,
wherein the atomic hydrogen ions are implanted at an implantation dose of 5.0×10 16 atoms/cm 2 to 2.75×10 17 atoms/cm 2 , or the molecular hydrogen ions are implanted at an implantation dose of 2.5×10 16 molecules/cm 2 to 1.37×10 17 molecules/cm 2 .
2. The method for manufacturing a composite wafer according to claim 1 , wherein the second heat treatment is performed at a temperature of 250° C. to 400° C.
3. The method for manufacturing a composite wafer according to claim 2 , wherein the oxide single crystal thin film of the composite wafer has a hydrogen ion concentration of 4.0×10 20 to 8.0×10 20 atoms/cm 3 in the oxide single crystal thin film except a surface of the oxide single crystal thin film and a joining interface with the support wafer.
4. The method for manufacturing a composite wafer according to claim 1 , wherein the second heat treatment is performed at a temperature higher than 400° C. and not higher than 600° C. and at a temperature increase rate of less than 10.0° C./min from 250° C. to the temperature.
5. The method for manufacturing a composite wafer according to claim 4 , wherein the composite wafer has a hydrogen ion concentration of 5.0×10 20 to 1.0×10 22 atoms/cm 3 on a joining interface between the support wafer and the oxide single crystal thin film.
6. The method for manufacturing a composite wafer according to claim 1 , wherein the second heat treatment is performed at a temperature higher than 400° C. and not higher than 600° C. and at a temperature increase rate of 10.0° C./min or more from 250° C. to the temperature.
7. The method for manufacturing a composite wafer according to claim 1 , wherein the support wafer is a wafer selected from the group consisting of a sapphire wafer, a silicon wafer, a silicon wafer with an oxide film, and a glass wafer.
8. The method for manufacturing a composite wafer according to claim 1 , wherein the surface activation treatment is selected from ozone water treatment, UV ozone treatment, ion beam treatment, and plasma treatment.
9. The method for manufacturing a composite wafer according to claim 1 wherein the support wafer is a glass wafer, and the temperature in the first heat treatment step is 90 to 110° C.
10. The method for manufacturing a composite wafer according to claim 1 , wherein the support wafer is a silicon wafer or a silicon wafer with an oxide film, and the temperature in the first heat treatment step is 90 to 200° C.
11. The method for manufacturing a composite wafer according to claim 1 , wherein the support wafer is a sapphire wafer, and the temperature in the first heat treatment step is 90 to 225° C.
12. The method for manufacturing a composite wafer according to claim 1 , further comprising a step of polishing a surface of the oxide single crystal thin film, after the step of applying a mechanical impact and before the step of giving a composite wafer.
13. The method for manufacturing a composite wafer according to claim 1 , further comprising a step of measuring a thickness of the oxide single crystal thin film, after the step of applying a mechanical impact and before the step of giving a composite wafer.
14. A composite wafer comprising:
an oxide single crystal thin film of lithium tantalate or lithium niobate on a support wafer, wherein the composite wafer has a hydrogen ion concentration of 5.0×10 20 to 1.0×10 22 atoms/cm 3 on a joining interface between the support wafer and the oxide single crystal thin film.
15. A composite wafer comprising:
an oxide single crystal thin film of lithium tantalate or lithium niobate on a support wafer, wherein the oxide single crystal thin film of the composite wafer has a hydrogen ion concentration of 4.0×10 20 to 8.0×10 20 atoms/cm 3 in the oxide single crystal thin film except a surface of the oxide single crystal thin film and a joining interface with the support wafer.