IP Library › Granted Patent US 10,629,512
Granted Patent B2
US 10,629,512 · App. 16/024,670 · Granted Apr 21, 2020

Integrated circuit die with in-chip heat sink

Inventors: Hong-Tsz Pan (Cupertino, CA); Jonathan Chang (Mountain View, CA); Nui Chong (San Jose, CA); Henley Liu (San Jose, CA); Gamal Refai-Ahmed (Santa Clara, CA); Suresh Ramalingam (Fremont, CA)
Assignee: XILINX, INC.
H01L23/3675H01L23/481H01L23/49827H01L23/528H01L24/06H01L24/17H01L25/0657H01L25/50H01L2224/06519H01L2224/16146H01L2224/16235H01L2224/17519H01L2225/06513H01L2225/06586H01L2225/06589
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Quick Facts
Patent No.
US 10,629,512
App. No.
16/024,670
Granted
Apr 21, 2020
Kind
B2
Abstract

A method and apparatus are provided that includes an integrated circuit die having an in-chip heat sink, along with an electronic device and a chip package having the same, and methods for fabricating the same. In one example, an integrated circuit die has an in-chip heat sink that separates a high heat generating integrated circuit from another integrated circuit disposed within the die. The in-chip heat sink provides a highly conductive heat transfer path from interior portions of the die to at least one exposed die surface.

Claims (45)

1. An integrated circuit die comprising:

a die body having an upper surface and a lower surface, the lower surface having a plurality of bond pads for establishing electrical connection with circuitry within the die body;

a first circuit disposed in the die body and electrically coupled to at least one of the bond pads, the first circuit configured to operate at a first temperature;

a second circuit disposed in the die body and electrically coupled to at least one of the bond pads, the second circuit configured to operate at a second temperature that is less than the first temperature; and

an in-chip heat sink having a ring-shape and an orientation extending between the upper surface and the lower surface, the in-chip heat sink separating the first circuit from the second circuit.

2. The integrated circuit die of claim 1 , wherein the in-chip heat sink comprises:

vias and lines formed in metals layers of the die body.

3. The integrated circuit die of claim 2 , wherein the in-chip heat sink comprises at least one metal layer that is also in the first circuit.

4. The integrated circuit die of claim 1 , wherein the in-chip heat sink circumscribes the first circuit.

5. The integrated circuit die of claim 1 , wherein interconnect circuitry coupled to the first circuit passes through the in-chip heat sink.

6. The integrated circuit die of claim 1 further comprising:

a first dummy metal island disposed in the die body proximate the first circuit and separated from the second circuit by the in-chip heat sink; and

a second dummy metal island; and

a via connecting the first dummy metal island to the second dummy metal island.

7. The integrated circuit die of claim 6 , wherein the first dummy metal island is in direct contact with the in-chip heat sink.

8. The integrated circuit die of claim 1 , wherein the upper surface of the die body further comprises:

a plurality of metal filled recesses.

9. The integrated circuit die of claim 8 , wherein at least one of the metal filled recesses is above or in direct contact with the in-chip heat sink.

10. The integrated circuit die of claim 1 , wherein at least one of the bond pads is in direct contact with the in-chip heat sink.

11. An integrated circuit chip package comprising:

a package substrate having a top side and a bottom side; and

a first integrated circuit (IC) die coupled to the top side of the package substrate by first solder connections, the first IC die comprising:

a die body having an upper surface and a lower surface, the lower surface having a plurality of bond pads for establishing electrical connection with circuitry within the die body;

a first circuit disposed in the die body and electrically coupled to at least one of the bond pads, the first circuit configured to operate at a first temperature;

a second circuit disposed in the die body and electrically coupled to at least one of the bond pads, the second circuit configured to operate at a second temperature that is less than the first temperature; and

an in-chip heat sink having a ring-shape and an orientation extending between the upper surface and the lower surface, the in-chip heat sink separating the first circuit from the second circuit.

12. The integrated circuit chip package of claim 11 further comprising:

a heat sink coupled to the bottom side of the package substrate, the heat sink conductively coupled by a via formed through the package substrate and contacting, through some of the first solder connections, the in-chip heat sink.

13. The integrated circuit chip package of claim 11 further comprising:

a second IC die coupled to first IC by second solder connections, the second IC die having an in-chip heat sink coupled to the first IC by some of the second solder connections.

14. The integrated circuit chip package of claim 13 , wherein the in-chip heat sink of the second IC die extends to an upper surface of the second IC die.

15. The integrated circuit chip package of claim 14 , wherein the in-chip heat sink of the second IC die is electrically floating.

16. The integrated circuit chip package of claim 13 further comprising:

a cover mounted over an upper surface of the second IC die, the cover;

a thermal interface material disposed in contact with a contact pad terminating the in-chip heat sink at the upper surface of the second die and the cover; and

a heat sink disposed on the cover.

17. An integrated circuit chip package comprising:

a package substrate having a top side and a bottom side;

a first integrated circuit die having a first in-chip heat sink; and

a second integrated circuit die disposed on the top side of the package substrate, the second integrated circuit die having a first circuitry and a second circuitry separated by a second in-chip heat sink, the second in-chip heat sink coupled to the first in-chip heat sink through one or more solder connections.

18. The integrated circuit chip package of claim 17 , wherein the second integrated circuit die further comprise:

a first circuit disposed in the second integrated circuit die, the first circuit configured to operate at a first temperature;

a second circuit disposed in the second integrated circuit die and separated from the first circuit by the second in-chip heat sink, the second circuit configured to operate at a second temperature that is less than the first temperature.

19. The integrated circuit chip package of claim 17 , wherein the first in-chip heat sink is electrically floating and defines part of a highly conductive heat transfer path out through an upper surface of the second IC die.

20. The integrated circuit chip package of claim 17 , wherein the second in-chip heat sink is coupled by solder connections to the package substrate forming a highly conductive heat transfer path out through a lower surface of the second IC die.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2018
From: HUANG, HSIU-WEN; CHANG, JONATHAN; CHONG, NUI; LIU, HENLEY; REFAI-AHMED, GAMAL; RAMALINGAM, SURESH
To: XILINX, INC.
Reel/Frame 046255/0986 →
Continuity (1)
Related Publication 20200006186A1 · Jan 2, 2020
Cited By (2)
US 12,315,781 US 12,355,024