Cell architecture based on multi-gate vertical field effect transistor
A cell architecture is provided. A cell architecture including a vertical field effect transistor (VFET) having at least two fins serving as a vertical channel, a gate including a first gate portion surrounding the first fin, a second gate portion surrounding the second fin, and a third gate portion providing connection therebetween, and a top source/drain (S/D) including a first top S/D portion on the first fin and a second top S/D portion on the second fin, a gate contact structure connected to the third gate portion, a top S/D contact structure connected to one of the first top S/D portion or the second top S/D portion and serving as a horizontal conductive routing layer; and metal patterns on the gate contact structure and the top S/D contact structure and connected thereto through vias, and serving as a vertical conductive routing layer may be provided.
1. A cell architecture comprising:
a vertical field effect transistor (VFET) including,
a first fin and a second fin protruding from a substrate, the first fin and the second fin spaced apart from each other in a first direction and elongated in a second direction crossing the first direction,
a gate including a first gate portion on a sidewall of the first fin, a second gate portion on a sidewall of the second fin, and a third gate portion connecting the first gate portion with the second gate portion, and
a top S/D including a first top S/D portion at a top of the first fin and a second top S/D portion at a top of the second fin;
a gate contact structure spaced apart from the first fin and the second fin in the second direction when viewed in a plan view and connected to the third gate portion;
a top S/D contact structure connected to one of the first top S/D portion or the second top S/D portion, at least one of the top S/D contact structure or the gate contact structure serving as a first conductive routing layer in the first direction; and
metal patterns on the gate contact structure and the top S/D contact structure, the metal patterns configured to be connected to at least one of the gate contact structure or the top S/D contact structure through vias, respectively, the metal patterns serving as a second conductive routing layer in the second direction.
2. The cell architecture of claim 1 , wherein the first gate portion and the second gate portion are spaced apart by a first pitch in the first direction, and the metal patterns are arranged by a second pitch different from the first pitch in the first direction.
3. The cell architecture of claim 2 , wherein a ratio between the first pitch and the second pitch is m:n, where m and n are natural numbers, and n is greater than m.
4. The cell architecture of claim 1 , further comprising:
a bottom S/D of the VFET enclosing at least a portion of the first fin, the second fin, the first gate portion, and the second gate portion, when viewed in a plan view.
5. The cell architecture of claim 4 , wherein the third gate portion includes an extension area, which extends beyond a side of the bottom S/D in the first direction.
6. The cell architecture of claim 5 , wherein when viewed in a plan view, the gate contact structure is elongated away from the side of the bottom S/D in the first direction toward a center of the third gate portion.
7. The cell architecture of claim 4 , wherein when viewed in a plan view, at least one side of the third gate portion includes an extension area in the first direction that lies beyond an imaginary line extending from a side of the bottom S/D in the second direction.
8. The cell architecture of claim 7 , wherein when viewed in a plan view, the gate contact structure is elongated away from the imaginary line in the first direction toward a center of the third gate portion.
9. The cell architecture of claim 4 , wherein when viewed in a plan view, a side of the third gate portion is laterally between both ends of the bottom S/D in the first direction.
10. The cell architecture of claim 4 , wherein when viewed in a plan view, the gate contact structure is elongated away from a nearby side of the bottom S/D in the first direction.
11. The cell architecture of claim 1 , further comprising:
an additional top S/D contact structure overlapping the gate contact structure and not connected to any of the first top S/D portion or the second top S/D portion.
12. A cell architecture comprising:
a multi-gate vertical field effect transistor including,
a first fin and a second fin protruding from a substrate, the first fin and the second fin spaced apart from each other in a first direction and elongated in a second direction crossing the first direction,
a bottom S/D on the substrate, the bottom S/D surrounding the first fin and the second fin,
a gate including a first gate portion on a sidewall of the first fin, a second gate portion on a sidewall of the second fin, and a third gate portion connecting the first gate portion with the second gate portion, the third gate portion overlapping an end region of the bottom S/D and including an extension area extending away from the first and second fins in the second direction when viewed in a plan view,
a top S/D including a first top S/D portion at a top of the first fin and a second top S/D portion at a top of the second fin, the bottom S/D in the substrate;
a gate contact structure connected to the third gate portion at the extension area of the third gate portion;
a top S/D contact structure connected to one of the first top S/D portion or the second top S/D portion, at least one of the gate contact structure or the top S/D contact structure serving as a first conductive routing layer in the first direction; and
metal patterns on the gate contact structure and the top S/D contact structure, the metal patterns configured to be connected to at least one of the gate contact structure or the top S/D contact structure through vias, the metal patterns serving as a second conductive routing layer in the second direction.
13. The cell architecture of claim 12 , wherein the first gate portion and the second gate portion are spaced apart by a first pitch in the first direction, and the metal patterns are arranged by a second pitch different from the first pitch in the first direction.
14. The cell architecture of claim 13 , wherein a ratio between the first pitch and the second pitch is m:n, where m and n are natural numbers and n is greater than m.
15. The cell architecture of claim 12 , wherein when viewed in a plan view, the third gate portion includes an extension area, which extends beyond a side of the bottom S/D in the first direction.
16. The cell architecture of claim 15 , wherein when viewed in a plan view, the gate contact structure is elongated away from the side of the bottom S/D in the first direction toward a center of the third gate portion.
17. The cell architecture of claim 12 , wherein when viewed in a plan view, at least one side of the third gate portion includes an extension area in the first direction that lies beyond an imaginary line extending from a side of the bottom S/D in the second direction.
18. The cell architecture of claim 17 , wherein when viewed in a plan view, the gate contact structure is elongated away from a side of the bottom S/D in the first direction toward a center of the third gate portion.
19. The cell architecture of claim 12 , wherein when viewed in a plan view, the gate contact structure is elongated away from a nearby side of the bottom S/D in the first direction.
20. The cell architecture of claim 12 , further comprising:
an additional top S/D contact structure overlapping the gate contact structure and not connected to any of the first top S/D portion or the second top S/D portion.